Abstract: A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

Abstract: A part replacement system includes a part storage device configured to store an unused consumable part, and a replacement device that is connected to a processing device and the part storage device, the replacement device being configured to replace a used consumable part installed in the processing device with the unused consumable part stored in the part storage device. The replacement device is moved to a position of the processing device having the used consumable part that requires replacement, and the replacement device is connected to the processing device, and the part storage device is moved to a position of the replacement device connected to the processing device having the used consumable part that requires replacement, and the part storage device is connected to the replacement device.

Abstract: A plasma processing apparatus for processing a workpiece with plasma includes a stage configured to place thereon the workpiece, a waveguide part configured to introduce plasma-generating electromagnetic waves in a VHF band into the plasma processing apparatus, and a dielectric window configured to transmit the electromagnetic waves introduced through the waveguide part to a plasma processing space formed on a workpiece placement side of the stage. The dielectric window is an annular member disposed so as to face a plasma processing space side of the stage and includes multiple convex portions, which protrude toward the stage and are arranged on the stage side along a circumferential direction at regular intervals. The convex portions each has a circumferential width of ? to ? of the wavelength of the electromagnetic waves inside the dielectric window.

Abstract: Coupled processing containers include a first processing container and a second processing container provided side by side in a horizontal direction to form a gap therebetween, the first processing container and the second processing container being configured to store substrates, respectively, in order to perform vacuum processing, and a connecting part provided across the gap so as to connect the first processing container and the second processing container to each other, the connecting part being configured to be slidable in the horizontal direction with respect to at least one of the first processing container and the second processing container.

Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

Abstract: A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)?0.5.

Abstract: A gate valve opens and closes a first opening of a first chamber in a vacuum processing apparatus. The gate valve includes: a valve element configured to open and close the first opening; a drive configured to move the valve element so that the valve element takes at least a closing position, where the valve element closes the first opening, and an opening position, where the valve element opens the first opening; a first gas line and a second gas line; and a first switching valve that connects one of the first gas line and the second gas line to the drive. The drive moves the valve element from the opening position to the closing position by pressure of gas supplied from the first gas line or the second gas line, and holds the valve element at the closing position by pressure of gas supplied from the second gas line.

Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

Abstract: In one exemplary embodiment, a method for cleaning a chamber of a substrate processing apparatus or a component disposed in the chamber includes: (a) forming a second metal-containing substance from a first metal-containing substance adhering to the chamber or the component by using a first processing gas including a fluorine-containing gas in the chamber; and (b) removing the second metal-containing substance by using a second processing gas including a precursor in the chamber.

Abstract: A method includes providing a first bonding surface on a first substrate, the first bonding surface including a bonding layer that is thermally curable or photocurable. The method includes providing a second bonding surface on a second substrate. The method includes bonding the first substrate to the second substrate by making physical contact between the first bonding surface and second bonding surface. The method further includes applying thermal energy or light to the bonding layer.

Abstract: A substrate transport apparatus which transports a substrate to a substrate transport position. The apparatus comprises: a transport unit including a substrate holder that holds the substrate, a base having magnets and configured to move the substrate holder, and a link member connecting the substrate holder to the base; and a planar motor having a main body, electromagnetic coils arranged in the main body, and a linear driver supplying power to the electromagnetic coils to magnetically levitate and linearly drive the base. The base includes a first member and a second member rotatably provided in the first member, and the magnets are provided inside the first member and the second member, the link member is rotatably connected to the second member, and the linear driver rotates the second member with respect to the first member and expands and contracts the substrate holder via the link member.

Abstract: The disclosure relates to a method for tuning stress transitions of films on a substrate. The method includes forming a stress-adjustment layer on the substrate, wherein the stress-adjustment layer includes first regions formed of a first material and second regions formed of a second material, wherein the first material includes a first internal stress and the second material includes a second internal stress, and wherein the first internal stress is different compared to the second internal stress; and forming transition regions between the first regions and the second regions, wherein the transition regions include an interface between the first material and the second material that has a predetermined slope that is greater than zero degrees and less than 90 degrees.

Abstract: There is provided a filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz. The filter circuit comprises: a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member; and a second filter provided in a wiring between the first filter and the power supply.

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

Abstract: A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

Abstract: This disclosure describes a method for fabricating a plurality of semiconductor devices in a semiconductor wafer includes: bowing a semiconductor wafer including a substrate by covering the substrate with a strained layer; forming trenches at locations in scribe lines of the semiconductor wafer, the scribe lines identifying areas between adjacent dies on the semiconductor wafer; and reducing the bowing of the semiconductor wafer by filling the trenches with a stress-compensation material.

Abstract: A plasma-processing apparatus includes a processing container, a stage provided within the processing container, an upper electrode provided above a front surface of the stage, with a space within the processing container interposed therebetween, a waveguide configured to introduce radio-frequency waves in a VHF/UHF band into the space, and a conductive part extending between the outer peripheral portion of the stage and a side wall of the processing container. The stage includes a metal layer. Its outer peripheral portion includes a part of the metal layer. The waveguide includes an end portion from which radio-frequency waves are emitted. The end portion is disposed to face the space. The side wall is grounded. The conductive part is electrically connected to the metal layer and the side wall while extending from the outer peripheral portion toward the side wall so that the radio-frequency waves are introduced into the space.