Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.

Abstract: A driving assistance control apparatus of a vehicle includes a blind area detector, a driving operation detector, and an electronic control unit. The blind area detector is configured to detect the presence or absence of a blind area as seen from the vehicle in a traveling direction of the vehicle. The driving operation detector is configured to detect driving operation of the driver. The electronic control unit is configured to perform automatic deceleration control of the vehicle based on detection of the presence of the blind area by the blind area detector. The electronic control unit is configured to start the automatic deceleration control, by referring to the driving operation of the driver after detection of the presence of the blind area by the blind area detector.

Abstract: The present invention provides a thermally decomposable binder that achieves a reduced residual carbon after sintering, and that can be subjected to a dewaxing treatment at a relatively low temperature in a non-oxidative atmosphere. More specifically, the present invention provides an aliphatic polycarbonate that has a structure obtained by neutralizing a Brønsted acid with an organic onium salt in a side chain.

Abstract: A thermally decomposable binder containing an aliphatic polycarbonate resin containing a constituting unit represented by the formula (1): wherein each of R1, R2 and R3, which may be identical or different, is a hydrogen atom, an alkyl group having from 1 to 10 carbon atoms, or an aryl group having from 6 to 20 carbon atoms; and n is 1 or 2. The thermally decomposable binder and the fine inorganic particle-dispersed paste composition, each containing an aliphatic polycarbonate resin of the present invention can be used in general molded articles, optical materials such as films, fibers, optical fibers, and optical disks, thermally decomposable materials such as ceramic binders, and lost foam casting, medicinal materials such as drug capsules, additives for biodegradable resins, main components for biodegradable resins, and the like.

Abstract: A solid electrolyte contains: a copolymer having a constituent unit represented by a formula (1) below and a constituent unit represented by a formula (2) below; and a metal salt. In the formula (1), m is 2 or 3, and R1 each independently represent a hydrogen atom or a methyl group. In the formula (2), n is 2 or 3, and R2 each independently represent a hydrogen atom or a methyl group.

Abstract: A method of manufacturing a crystalline gallium nitride film, including: a growth step in which a GaCl3 gas, a halogen gas, an NH3 gas, and a carrier gas consisting of one or more inert gases are supplied onto a substrate, thereby growing a crystalline gallium nitride film on the substrate, wherein a partial pressure ratio [PHalogen/PGaCl3] is defined as a ratio of a partial pressure of the halogen gas with respect to a partial pressure of the GaCl3 gas on the substrate in the growth step, and the partial pressure ratio [PHalogen/PGaCl3] is 0.20 or more.

Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.

Abstract: The present invention provides an aliphatic polycarbonate that can be thermally decomposed (dewaxed) at a relatively low temperature. The aliphatic polycarbonate comprises a constituent unit represented by formula (1): wherein R1, R2, and R3 are identical or different, and each represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 15 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; R4 represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and n is an integer of 0 to 3.

Abstract: A map information provision system includes: a road map information database configured to store road map information; a vehicle position determination unit configured to detect and determine a position of a vehicle on a road; a road map information extraction unit configured to extract the road map information around the vehicle from the road map information database, based on the position of the vehicle; and a waypoint map constructor unit configured to determine positions of waypoints and configure a waypoint map that is made up of the plurality of the waypoints, wherein the waypoint map is supplied to a driving support device for the vehicle or a driving control device for the vehicle and is utilized as map information on the planned driving route.

Abstract: A sheet-type metamaterial of a film configuration to exhibit a figure of merit (FOM) exceeding 300 in a terahertz wave band. A film-shaped dielectric substrate has a front surface on which a first wire array is formed, and a back surface on which a second wire array is formed. The first wire array includes elongated metallic first cut wires of a predetermined length l aligned in a y-axis direction with a gap g therebetween and in an x-axis direction with space s therebetween. The second wire array includes second metallic cut wires having the same shape as the first cut wires and aligned to overlap the first cut wires. With a thickness d of the dielectric substrate set at about 50 ?m, the length l of the first cut wire and the second cut wire is a length approximate to a value to generate resonance at a design frequency.

Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Abstract: A road marking recognition device recognizes a road marking from an image acquired by imaging a road surface of a road on which a vehicle is traveling. The road marking recognition device includes: a storage unit configured to store a plurality of templates each of which corresponds to a corresponding one of plurality of feature portions of a road marking as a recognition target and between which a relative positional relationship is known; and a recognition unit configured to detect a second feature portion corresponding to a second template among the plurality of templates when the first feature portion is detected from the image.

Abstract: The present invention provides a thermally decomposable binder for which dewaxing can be performed at low temperatures, and an inorganic fine particle-dispersed paste composition comprising this binder. Specifically, the present invention provides a thermally decomposable binder comprising an aliphatic polycarbonate resin comprising a constituent unit represented by formula (1): wherein R1, R2, and R3 are identical or different, and each represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 20 carbon atoms, and n is 1 or 2, and provides an inorganic fine particle-dispersed paste composition comprising this binder.

Abstract: Provided is a heat transfer device comprising: a housing; a regenerator; a first heat exchanger; and a second heat exchanger.

Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.

Abstract: The present invention relates to an ultraviolet reflecting agent composition or a water repellent agent composition, which contains at least one compound selected from among 2-pentacosanone, 2-heptacosanone, 2-nonacosanone, tetracosanal, hexacosanal, octacosanal and triacontanal.

Abstract: This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.

Abstract: A cell isolation method includes: a cell trapping step of allowing a test liquid to pass through a cell trapping filter which has a plurality of through-holes in the thickness direction, thereby trapping isolation target cells contained in the test liquid on one surface of the cell trapping filter; a gel embedding step of introducing a stimulus-responsive hydrogel onto the one surface of the cell trapping filter on which the cells have been trapped in the cell trapping step, thereby embedding the cells in the stimulus-responsive hydrogel; a gel hardening step of applying a stimulus to the stimulus-responsive hydrogel in which the cells are embedded, thereby hardening the stimulus-responsive hydrogel; and a detachment step of detaching the stimulus-responsive hydrogel that was hardened in the gel hardening step from the cell trapping filter.

Abstract: A driving assistance system includes a driving readiness degree estimation unit configured to estimate a driving readiness degree relating to a driving consciousness of the driver based on the travel state of the vehicle or the driving operation of the vehicle by the driver and the traveling environment of the vehicle, a proportional gain calculation unit configured to calculate a proportional gain based on the driving readiness degree and the speed of the vehicle, and an assistance torque calculation unit configured to calculate the assistance torque according to a value obtained by multiplying a difference between the target steering angle and the actual steering angle by the proportional gain. If the speed is constant, the proportional gain calculation unit is configured to calculate the proportional gain as a smaller value as the driving readiness degree becomes lower.