Abstract: A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portion 3 which is directly connected to the evaporator portion, and stores the steam generated by the evaporator portion; a passageway 4 which is directly connected to the steam storage portion and outwardly passes the generated steam; a liquid pathway 10b which is connected to the liquid tank portion, and supplies the liquid; and a heater unit 20 which is provided on one side of the evaporator portion, and heats at least the evaporator portion. The liquid tank portion 1, the evaporator portion 2, the steam storage portion 3, the passageway 4, and the liquid pathway 10b are formed within an integral member of a translucent material.

Abstract: The present invention provides a plasma resistant member having a reinforced mechanical strength and being sufficiently durable to exposure to a low pressure high density plasma. At least the surface of the alumina based material is formed of an oxide or composite oxide layer of a group IIIA element via an intermediate layer. It is preferable in the construction of the plasma resistant member that the intermediate layer comprises 10 to 80% by weight of the oxide or composite oxide of the group IIIA element in the periodic table and 90 to 20% by weight of alumina. The intermediate layer may also comprise a course ceramic with a porosity of 0.2 to 5%. It is also desirable that at least one of the conditions such as a difference in the thermal shrinkage ratio at 1600 to 1900° C. of 3% or less is provided.

Abstract: To provide a method for producing a ceramic porous material which has a high strength, though it has a high porosity, and which is excellent in permeability without dust generation. In a ceramic porous material having a three-dimensional mesh-like skeleton structure with a large number of substantially spherical adjacent cells communicating with each other via communication holes, the crystal particle size at the rim of each communication hole in the skeleton structure is provided substantially equal to the crystal particle size in the other parts.

Abstract: A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.

Abstract: A plasma-resistant article is provided in which a surface region of the article to be exposed to plasma in a corrosive atmosphere is formed from a zirconia-based ceramic that contains yttria in an amount of 7 to 17 mol %. The plasma-resistant article exhibits a sufficient resistance against exposure to plasma and is cost-effective. Preferably, the surface region has a centerline average roughness (Ra) of 1.2 to 5.0 ?m, which is readily achieved through the use of an etching solution containing hydrofluoric acid. The present invention also provides a production method for such a plasma-resistant article.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and a process for manufacturing a high purity silicon/silicon carbide composite containing a limited amount of carbon left without reaction. The present invention uses a silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % silicon carbide, said silicon carbide being formed from an assembly of fibers each having a thickness of 150 ?m or less and a length of 0.8 to 3.5 mm. The present invention is directed to a process for manufacturing a silicon/silicon carbide composite which comprises a first step where cellulose fibers with a fiber thickness of 150 ?m or less is heated at a temperature of 500° C. to 1500° C.

Abstract: A three-dimensional (micro-) channel structure with an increased length of internal channel is provided, which can be formed without requiring a boring step for vertical hole formation. The channel structure is formed by providing a polyhedral substrate with a groove over at least two faces thereof, preferably through press molding, and covering the faces provided with the grooves with a covering member or another polyhedral substrate to form a continuous internal channel communicative with an ambience through an opening.

Abstract: A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 ?m from surface in a plasma-resistant member.

Abstract: A plasma-resistant member used in a reaction chamber of a plasma treating apparatus is formed of a dense alumina sintered product having an average grain size of 18-45 &mgr;m, a surface roughness Ra of 0.8-3.0 &mgr;m and a bulk density of 3.90 g/cm3 or over.

Abstract: A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portion 3 which is directly connected to the evaporator portion, and stores the steam generated by the evaporator portion; a passageway 4 which is directly connected to the steam storage portion and outwardly passes the generated steam; a liquid pathway 10b which is connected to the liquid tank portion, and supplies the liquid; and a heater unit 20 which is provided on one side of the evaporator portion, and heats at least the evaporator portion. The liquid tank portion 1, the evaporator portion 2, the steam storage portion 3, the passageway 4, and the liquid pathway 10b are formed within an integral member of a translucent material.

Abstract: A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 &mgr;m or more between the plurality of atomic steps and forming a SiGe layer or a SiGe layer and a Si layer on the silicon substrate.

Abstract: The invention is intended to introduce cells easily into a ceramics for in vivo use. Also, the invention provides a ceramics for in vivo use which has a good affinity to a living body and no harmful action on a living body. The invention relates to a porous ceramics having many almost globular pores and made of a component comprising a calcium phosphate type. These pores are brought into contact and communicated with each other to thereby exhibit permeability. The permeability was designed to be 150 centidarcy or more and 8000 centidarcy or less.

Abstract: A micro-chemical chip is comprised of a flow passage substrate (110) that includes a substrate (101) of transparent material having a plurality of flow passages (111) in one surface and an optical device (109) built in the other surface as a unit. In a micro-chemical chip manufacturing method according to the present invention, with metal dies 150 and 160 prepared to shape flow passages, wells, and an optical device(s), components such as the optical devices, flow passages, and the like are formed in a single molding process. The present invention is also directed to an optical unit manufacturing method where the atmospheric gas of nitrogen typically employed in the prior art is replaced with any gas of higher heat conductivity such as helium gas to heat and shape material in this alternative atmospheric gas and obtain the molded product.

Abstract: A minute circuit is configured by protruded flow passage walls provided on the surfaces, opposite to each other, of first and second flat members disposed facing each other.

Abstract: A method for casting Y2O3 has steps of adding an acid to a slurry comprising at least a ceramic material having a purity of an Y2O3 being 99 wt % or more with an average particle diameter of 2 &mgr;m or less, water, a binder and a dispersant so that a pH value can be adjusted ranging from 8.5 to 10.5 and injecting the slurry into a mold.

Abstract: There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 &mgr;m to 1.3 &mgr;m.

Abstract: The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor wafer and a scattered beam from a defect present in a subsurface layer of the wafer is detected by an image pick-up device. The temperature of the wafer is changed to at least two temperatures of T1 and T2 or to any one of plural temperatures by means of a heater and the intensity of a scattered beam is measured. It is taken into account that the light absorbance of silicon and the penetration depth of light in silicon vary depending on temperature, to determine the depth and a relative dimensional factor of an internal defect which causes scattering of light, as well as the number of such crystal defects.

Abstract: A porous ceramics body for in vivo or in vitro 1use in which a number of pores are closely distributed in three dimensional directions, adjoining pores thereof being partitioned by wall portions with respective communication ports to bring said adjoining pores into communication with each other such that a series of connected spherical pores are formed therewithin, said porous ceramics body being made of a sintered calcium phosphate body, characterized in that, within said sintered calcium phosphate body, pores each having a diameter of 5 microns (&mgr;m) or more account for 80% or more of all the pores in terms of volume whereas pores having a diameter of less than 5 microns (&mgr;m) account for less than 20% of all the pores in terms of volume as subjected to a mercury porosimeter measurement.