Patents Assigned to Toshiba Materials Co., Ltd.
  • Publication number: 20230093291
    Abstract: A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities: 0.8? dA/dB? 1.2; and 0.8? rA/rB? 1.2.
    Type: Application
    Filed: November 22, 2022
    Publication date: March 23, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventor: Kai FUNAKI
  • Publication number: 20230080016
    Abstract: A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.
    Type: Application
    Filed: November 10, 2022
    Publication date: March 16, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Maki YONETSU, Seiichi SUENAGA, Sachiko FUJISAWA, Takashi SANO
  • Patent number: 11600866
    Abstract: A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 ?m and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: March 7, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Atsuya Sasaki, Akito Sasaki, Yoshinori Kataoka, Hideaki Hirabayashi, Shuichi Saito
  • Patent number: 11594467
    Abstract: According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: February 28, 2023
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takayuki Naba, Keiichi Yano, Hiromasa Kato
  • Patent number: 11572275
    Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.
    Type: Grant
    Filed: June 1, 2021
    Date of Patent: February 7, 2023
    Assignees: SHIBAURA INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Atsushi Yumoto, Mari Shimizu, Tetsuo Inoue, Takashi Hino, Shuichi Saito
  • Patent number: 11564314
    Abstract: A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ?A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ?B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |?A??B|?0.1.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: January 24, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Jun Momma, Katsuyuki Aoki, Satoshi Takahashi
  • Publication number: 20230002663
    Abstract: A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
    Type: Application
    Filed: August 31, 2022
    Publication date: January 5, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takahiro KAWAMOTO, Tomoko EGUCHI, Tomohiro YAMASHITA, Masaya HAGIWARA, Akiko SAITO, Daichi USUI
  • Publication number: 20230002662
    Abstract: A cold storage material, which has a large specific heat and a small magnetization in an extremely low temperature region and has satisfactory manufacturability, is provided, and a method for manufacturing the same is provided. Further, a refrigerator having high efficiency and excellent cooling performance is provided by filling this refrigerator with the above-described cold storage material. Moreover, a device incorporating a superconducting coil capable of reducing influence of magnetic noise derived from a cold storage material is provided. The cold storage material of embodiments is a granular body composed of an intermetallic compound in which the ThCr2Si2-type structure 11 occupies 80% by volume or more, and has a crystallite size of 70 nm or less.
    Type: Application
    Filed: August 31, 2022
    Publication date: January 5, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takahiro KAWAMOTO, Tomoko EGUCHI, Tomohiro YAMASHITA, Masaya HAGIWARA, Akiko SAITO, Daichi USUI
  • Patent number: 11530846
    Abstract: A reduction in a permeability of refrigerant gas is suppressed while increasing a filling factor of regenerator material particles with respect to a stage of a cold head. A cold head includes a stage including regenerator material particle groups, and a metal mesh material partitioning the regenerator material particle groups. The metal mesh material has quadrangular mesh holes each having a length of a long side of 1/10 or more and ½ or less of each of average particle sizes of the regenerator material particle groups.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: December 20, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuhiko Yamada, Keiichi Fuse
  • Patent number: 11512023
    Abstract: In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 ?m×50 ?m observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: November 29, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuyuki Aoki, Takayuki Fukasawa, Jun Momma, Kentaro Iwai
  • Publication number: 20220355978
    Abstract: A packaging container for transporting ceramic substrates according to the present embodiment includes a bottom portion in a rectangular shape, and four side portions connected to four edges of the bottom portion respectively. Side protrusions having a height of 2 mm or more and protruding inward are provided on at least two opposite side portions among the four side portions. The bottom portion is provided with a bottom protrusion having a height of 2 mm or more and protruding inward.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Masanori HOSHINO, Hiromasa KATO, Hideki SATO
  • Publication number: 20220308243
    Abstract: According to an embodiment, a radiation-scintillated shield which attenuates an incident radiation, includes a shielding part containing an activator-added gadolinium compound as an aggregate. The activator uses the gadolinium compound as a base material and emits light when struck by the radiation. Consequently, it becomes possible to shield a ?-ray and a neutron with a thickness which is about the same as that of a conventional concrete shield of ?-ray shield, and to confirm leakage of radiation.
    Type: Application
    Filed: March 2, 2022
    Publication date: September 29, 2022
    Applicants: TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kohichi NAKAYAMA, Koichi NITTOH, Yukio SONODA, Yukihiro FUKUTA
  • Publication number: 20220295644
    Abstract: A bonded body includes a ceramic substrate and a copper plate, in which the copper plate is bonded to the ceramic substrate via a bonding layer, the copper plate includes a surface perpendicular to a direction in which the ceramic substrate and the copper plate are bonded, and a number percentage of copper crystal grains having major diameters greater than 400 ?m in three 5 mm×5 mm regions included in the surface is not less than 0% and not more than 5%. The bonding temperature is favorably not more than 800° C. The number percentage of the copper crystal grains having major diameters greater than 400 ?m is favorably not more than 1%.
    Type: Application
    Filed: May 27, 2022
    Publication date: September 15, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Maki YONETSU, Seiichi SUENAGA, Sachiko FUJISAWA, Takashi SANO
  • Publication number: 20220288726
    Abstract: According to one embodiment, when a DSC curve is measured using a differential scanning calorimeter (DSC) for a brazing material for bonding a ceramic substrate and a metal plate, the brazing material has an endothermic peak within a range of not less than 550° C. and not more than 700° C. in a heating process. The brazing material favorably includes Ag, Cu, and Ti. The brazing material favorably has not less than two of the endothermic peaks within a range of not less than 550° C. and not more than 650° C. in the heating process.
    Type: Application
    Filed: May 27, 2022
    Publication date: September 15, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Maki YONETSU, Seiichi SUENAGA, Sachiko FUJISAWA, Takashi SANO
  • Publication number: 20220260731
    Abstract: A scintillator array includes: a structure having scintillator segments and a first reflective layer, the first reflective layer being provided between the scintillator segments and being configured to reflect light, and the scintillator segments having a sintered compact containing a rare earth oxysulfide phosphor; and a layer having a second reflective layer provided above the structure, the second reflective layer being configured to reflect light. The first reflective layer has a portion extending into the layer.
    Type: Application
    Filed: April 27, 2022
    Publication date: August 18, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiroyasu KONDO, Yukihiro FUKUTA, Kazumitsu MORIMOTO, Makoto HAYASHI
  • Patent number: 11417449
    Abstract: A magnetic sheet 1 of an embodiment includes a stack of a plurality of magnetic thin strips and resin film parts. The stack includes from 5 to 25 pieces of the magnetic thin strips. The magnetic thin strips are provided with cutout portions each having a width of 1 mm or less (including 0 (zero)). A ratio (B/A) of a total length B of the cutout portions provided to the magnetic thin strip to a total outer peripheral length A of an outer peripheral area of the magnetic thin strip arranged on one of the resin film parts is in a range of from 2 to 25.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: August 16, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takao Sawa, Katsuhiko Yamada, Tadao Saito
  • Publication number: 20220252739
    Abstract: A scintillator array includes: a structure having at least one scintillator segment and a first reflective layer, the at least one scintillator segment and the first reflective layer having a first surface and a second surface, the at least one scintillator segment having a sintered compact containing a rare earth oxysulfide phosphor, and the first reflective layer being configured to reflect light; and a second reflective layer provided above the first surface via an adhesive layer, the adhesive layer having a thickness of 2 ?m or more and 40 ?m or less, and the second reflective layer having a film configured to reflect light.
    Type: Application
    Filed: April 26, 2022
    Publication date: August 11, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiroyasu KONDO, Kazumitsu MORIMOTO
  • Publication number: 20220243997
    Abstract: A two-stage heat regenerating cryogenic refrigerator may include: a vacuum vessel; a first and second cylinder in the vessel; the second cylinder coaxially connected to the first cylinder; a first regenerator in the first cylinder, the first regenerator accommodating heat regenerating material (HRM) 1; and a second regenerator in the second cylinder accommodating HRM 2, HRM 2 including plural HRM particles, each HRM particle including a heat regenerating substance having a maximum value of specific heat at a temperature of 20 K or less of 0.3 J/cm3·K or more and a metal element; each HRM particle including a first and second region, the second region being closer to each HRM particle's outer edge than the first, and the second region having a metal element higher concentration than the first, the first and second region containing the heat regenerating substance, and the heat regenerating substance contains an oxide or oxysulfide component.
    Type: Application
    Filed: April 25, 2022
    Publication date: August 4, 2022
    Applicants: Kabushiki Kaisha Toshiba, TOSHIBA MATERIALS CO., LTD.
    Inventors: Tomohiro YAMASHITA, Takahiro KAWAMOTO, Tomoko EGUCHI, Takashi KUBOKI
  • Publication number: 20220210903
    Abstract: A high-frequency acceleration cavity core is a toroidal core obtained by winding an Fe-based magnetic ribbon having crystals with an average crystal grain size of 1 ?m or less, in which a space factor of the Fe-based magnetic ribbon is 40% or more and 59% or less, and a ?Qf value at 1 MHz is 3×109 Hz or more. The average crystal grain size is preferably 0.1 ?m or less. The toroidal core preferably has a portion having a gap portion from an inner diameter to an outer diameter.
    Type: Application
    Filed: February 11, 2022
    Publication date: June 30, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Tadao SAITO, Satoru HABU
  • Publication number: 20220172875
    Abstract: A magnetic ribbon according to an embodiment has a crystallinity degree of 0.05 or higher and 0.4 or lower when the magnetic ribbon is subjected to XRD analysis, the magnetic ribbon being Fe—Nb—Cu—Si—B-base, and the crystallinity degree being expressed by “a peak total area of a crystalline phase”/(“a peak area of an amorphous phase”+“the peak total area of the crystalline phase”). Also, the magnetic ribbon is preferred to have a region in which a KIKUCHI pattern is detected when the crystalline phase is subjected to EBSD analysis. Also, the thickness of the magnetic ribbon is preferred to be 25 ?m or less.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 2, 2022
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Tadao SAITO, Takahiro MAEDA, Satoru HABU