Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Abstract: A lighting device for adjusting the color temperature of white light emitted by a luminescent material is disclosed. The lighting device comprises: a luminescent material configured to emit white light when being exposed to electromagnetic radiation of a preselected wavelength range; at least one excitation unit configured to expose the luminescent material to electromagnetic radiation of a first wavelength range selected from the range of 230-330 nm; at least one excitation unit configured to expose the luminescent material to electromagnetic radiation of a second wavelength range, different from the first wavelength range, selected from the range of 300-600 nm; a metering unit configured to adjust the ratio of the irradiances of electromagnetic radiation of first wavelength range and of electromagnetic radiation of second wavelength range that is exposed on the luminescent material.

Abstract: The present invention relates to a novel cancer-associated biomarker and different applications and uses thereof. More specifically, the invention relates to a novel splice variant of CIP2A denoted as NOCIVA, as well as binding bodies such as probes, amplification primers, and antibodies specific for the same. Also provided are various methods for detecting and prognosing cancer on the basis of said splice variant, and a kit for use in said methods.

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).

Abstract: A detecting device for indicating the intensity of a predetermined type of radiation present in electromagnetic radiation incident on the detecting device can include: a filter element for filtering the incident electromagnetic radiation, wherein the filter element is configured to filter off electromagnetic radiation with a wavelength of above 590 nm from the incident electromagnetic radiation; a converging element configured to increase the density of photons of the predetermined type of radiation present in the incident electromagnetic radiation; and a sensor element of material arranged to receive the incident electromagnetic radiation that has passed through the filter element and the converging element for indicating the intensity of the predetermined type of radiation present in the incident electromagnetic radiation by change of the color of the sensor element of material, wherein the material is represented by the following formula: (M?)8(M?M??)6O24(X,S)2:M?? (formula (I)).

Abstract: The present invention relates to biomarkers, such as L1NE-1 type transposase domain containing 1 (L1TD1) as predictive prognostic markers of colon cancer. The invention also relates to a method of prognosing colon cancer, and to a kit for use in said method.

Abstract: The application relates to determining the amount of a predetermined type of radiation irradiated on a sensor material by: a) providing a sensor material; b) exposing the sensor material to the predetermined type of radiation for retaining the predetermined type of radiation in the sensor material for a predetermined period of time; c) subjecting the sensor material, which has been exposed to the predetermined type of radiation, to heat treatment and/or to optical stimulation; and d) determining the amount of visible light emitted by the sensor material as a result of being subjected to the heat treatment and/or to the optical stimulation; wherein the sensor material is represented by the following formula (I).

Abstract: The present disclosure relates to prostate cancer-associated genetic markers, namely HOXB13 rs138213197 and CIP2A rs2278911. Methods are disclosed of predicting, diagnosing and/or prognosing prostate cancer, such as a clinically relevant, aggressive form of prostate cancer, in a subject through determining his HOXB13 rs138213197 and CIP2A rs2278911 genotype. Different uses of the method, and a test kit for use in the method are disclosed.

Abstract: The invention relates to a material represented by the following formula (I) (M?)8(M?M??)6O24(X,X?)2:M???? formula (I). Further, the invention relates to a luminescent material, and to different medical imaging and diagnostic methods of using the material. Also disclosed is a method of securely identifying an item using the material.

Abstract: The present invention relates to methods for predicting a risk of a subject for Type 1 diabetes (T1D) on the basis of expression levels of protein markers in a sample obtained from the subject. The present invention also relates to in vitro kits for use in said methods.

Abstract: A material represented by the following formula (I) (M?)8M?6M??6O24(X,S)2:M????formula (I). Also disclosed is an ultraviolet radiation sensing material, an X-radiation sensing material, a device and a method for determining the intensity of ultraviolet radiation.

Abstract: The present invention relates to methods for predicting a risk of a subject for Type 1 diabetes (T1D) on the basis of expression levels of protein markers in a sample obtained from the subject. The present invention also relates to in vitro kits for use in said methods.

Abstract: The application relates to determining the amount of a predetermined type of radiation irradiated on a sensor material by: a) providing a sensor material; b) exposing the sensor material to the predetermined type of radiation for retaining the predetermined type of radiation in the sensor material for a predetermined period of time; c) subjecting the sensor material, which has been exposed to the predetermined type of radiation, to heat treatment and/or to optical stimulation; and d) determining the amount of visible light emitted by the sensor material as a result of being subjected to the heat treatment and/or to the optical stimulation; wherein the sensor material is represented by the following formula (I).

Abstract: The present invention relates to means and methods for detecting cyanobacterial cyclic peptide hepatotoxins (CCPH) in aqueous samples. More specifically, the invention provides recombinant anti-immunocomplex (anti-IC) antibodies which bind to immunocomplexes formed between one or more CCPH variants and an anti-CCPH primary antibody, and immunoassays, preferably non-competitive immunoassays, employing the same.

Abstract: The invention relates to a material represented by the following formula (I) (M?)8(M?M??)6O24(X, X?)2:M?? formula (I). Further, the invention relates to a luminescent material, and to different medical imaging and diagnostic methods of using the material. Also disclosed is a method of securely identifying an item using the material.

Abstract: The present invention relates to immunostimulatory compounds, combinations thereof, pharmaceutical or nutritional preparations comprising the same, as well as their use for modulating T helper (Th) and T regulatory (Treg) cell-mediated immune responses.

Abstract: The present invention relates to interleukin 32 (IL-32) as a predictive marker of Type 1 diabetes (T1D). The invention also relates to a method of predicting an individual's risk of or progression towards T1D, and to a kit for use in said method.