Abstract: A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.

Abstract: Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.

Abstract: The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and forming a precipitate, and washing abrasive particles synthesized by precipitation.

Abstract: Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.

Abstract: A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.