Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: According to an exemplary embodiment, a surface treatment unit comprises a chamber, a process gas inlet configured to allow process gas to enter the chamber, a first and a second plasma source, and a first RF antenna inductively coupled to the first plasma source and a second RF antenna inductively coupled to the second plasma source. The first and second RF antennas are configured to simultaneously ignite a first and second plasma, and the first and second plasma sources are configured to simultaneously supply the first and second plasma to a work-piece within the chamber.

Abstract: A dual-robot transfer system including: a transfer module for transferring work-pieces into and out of a process module; a physical interface between the transfer module and a supply-and-accept system; a first robot located substantially in the transfer module for transferring work-pieces to and from the process module and a buffer station located in the transfer module, the first robot including a first top arm and a first bottom arm, the first top arm and first bottom arm substantially having a first range of motion; and a second robot located substantially in the transfer module for transferring work-pieces to and from the process module, the buffer station, and the physical interface, the second robot including a second top arm and a second bottom arm, the second top arm and second bottom arm substantially having a second range of motion which overlaps in part with the first range of motion.

Abstract: In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.

Abstract: A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.

Abstract: A method for removing a resist layer includes an RIE process and a downstream microwave process, each performed such that the temperature of the wafer is no greater than about 60.degree. C. By performing these processes cold, the resist need not be pre-heated to drive off solvents. The RIE process and the microwave process can be performed sequentially or simultaneously.