Abstract: The invention relates to a method for producing a solar cell and to a solar cell which can be produced accordingly. On a solar cell substrate, first a ridged texture, which may for example comprise pyramids produced by alkaline etching, is formed both on a front face and on a rear face of the solar cell substrate. Then an etching barrier layer is applied to the front face of the solar cell substrate. Next the texture on the rear face of, the solar cell substrate is smoothed by etching in an isotropically acting etching solution which for example contains acid, wherein the front face is protected by the etching barrier layer. Thus, ridged structures on the rear face can be avoided and in this way reflection can be increased and surface passivation can be improved, both of which can lead to an increased potential efficiency.
Abstract: The present invention concerns an (adjuvant) treatment or prevention option for the treatment and prevention of prostate cancer. In particular, it pertains to the provision of recombinant, optimized PAP genes which are useful as DNA vaccines for the above treatment or prevention.
Abstract: A method for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g.
Type:
Grant
Filed:
March 21, 2007
Date of Patent:
September 11, 2012
Assignee:
Universität Konstanz
Inventors:
Axel Herguth, Gunnar Schubert, Martin Käs, Giso Hahn, Ihor Melnyk
Abstract: A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl alcohol. Therein, the process temperatures of the etching solution can be increased in comparison to conventional texturing methods, as a result of which the process time can be reduced. Process guidance is simplified and process stability is increased. A suitable texturing device for carrying out the method can, in addition to a basin for accommodating the etching solution and a heater for heating the etching solution to at least 85° C.
Type:
Application
Filed:
May 20, 2010
Publication date:
May 24, 2012
Applicant:
Universitaet Konstanz
Inventors:
Giso Hahn, Helge Haverkamp, Jose Nestor Ximello-Quiebras
Abstract: The present invention relates to cell free assays for measuring receptor activity, especially for measuring a constitutive or a non-constitutive activity of frizzled re-ceptors and uses thereof. The present invention further concerns a method for measuring a constitutive or non-constitutive activity of a frizzled receptor and a method for obtaining an active frizzled receptor ligand.
Abstract: The present invention relates to cell free assays for measuring receptor activity, especially for measuring a constitutive or a non-constitutive activity of frizzled receptors and uses thereof. The present invention further concerns a method for measuring a constitutive or non-constitutive activity of a frizzled receptor and a method for obtaining an active frizzled receptor ligand.
Abstract: A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present.
Type:
Application
Filed:
July 23, 2008
Publication date:
September 2, 2010
Applicants:
Universität Konstanz, Fraunhofer Gesellschaft Zur Förderung Der Angewandten Forschung E.V.
Inventors:
Giso Hahn, Helge Haverkamp, Bernd Raabe, Amir Dastgheib-Shirazi, Felix Book
Abstract: The invention relates to an element, comprising a substrate with a surface roughness of less than 5 nm, with saturated bonds on the surface and an MPt3 film applied to at least one side of the substrate, with a magnetic anisotropy perpendicular to the plane of the film, with M=a metal of the 5th to 9th sub-group of the periodic table, nickel or gadolinium. The invention further relates to a method for production of the above and the use of said elements as a magnetic component, for example as a magnetic sensor or as a magneto-optical storage element.
Type:
Grant
Filed:
August 9, 2001
Date of Patent:
July 4, 2006
Assignee:
Universität Konstanz
Inventors:
Günter Schatz, Manfred Albrecht, Mireille Maret, Andreas Maier, Frank Treubel
Abstract: The present invention concerns a process for fabricating a solar cell, wherein material is deposited on a multicrystalline silicon substrate and passivation is performed by means of hydrogen plasma. It is proposed that the material be deposited by low-pressure CVD and the hydrogen passivation be effected by feeding in a hydrogen plasma induced remotely from the partially processed solar cells. A device for carrying out the process is also described.
Type:
Grant
Filed:
September 26, 2002
Date of Patent:
May 11, 2004
Assignees:
Universität Konstanz, Centrotherm Elektrische Anlagen GmbH & Co.
Inventors:
Peter Fath, Markus Spiegel, Thomas Pernau, Gernot Wandel, Rainer Moller, Johann-George Reichart