Patents Assigned to Universite de Neuchatel
  • Patent number: 9680287
    Abstract: A laser source that generates an optical frequency comb, comprising a pumped laser medium placed inside an optical cavity that incorporates at least one optically-controlled modulator, a detector generating an error signal, and a modulation optical source that is controlled by the error signal and whose radiation is directed onto said optically-controlled modulator thereby stabilizing the Carrier-Envelope Offset (CEO) frequency and/or the CEO phase and/or the repetition rate of said source.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: June 13, 2017
    Assignee: UNIVERSITÉ DE NEUCHÂTEL
    Inventors: Stephane Schilt, Martin Hoffmann, Thomas Sudmeyer
  • Patent number: 8723020
    Abstract: The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: May 13, 2014
    Assignee: Universite de Neuchatel
    Inventors: Julien Bailat, Christophe Ballif, Didier Domine
  • Patent number: 8704084
    Abstract: A multiple-junction photoelectric device includes a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting layer is deposited, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, top and bottom faces, the latter having a peak-valley roughness >150 nm, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom<?90top by at least 3; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination ?this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the surface of the bottom face of the intermediate layer have an inclination ?this angle.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: April 22, 2014
    Assignee: Universite de Neuchatel
    Inventors: Thomas Soderstrom, Franz-Joseph Haug, Xavier Niquille
  • Publication number: 20130172408
    Abstract: The present invention provides new complexes and medicaments based on dinuclear ruthenium complexes comprising bridging thiolato or selenolato ligands. The complexes comprise a Ru2X3 or a Ru2X2 core, in which each one of said X is independently selected from said bridging ligands, with the proviso that at least one ligand comprises a substituted or unsubstituted phenyl moiety.
    Type: Application
    Filed: July 19, 2011
    Publication date: July 4, 2013
    Applicant: Universite de Neuchatel
    Inventors: Georg Suss-Fink, Bruno Therrien, Michael Gras, Paul Joseph Dyson, Olivier Zava, Anne-Flore Ibao
  • Patent number: 8368122
    Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: February 5, 2013
    Assignee: Universite de Neuchatel
    Inventors: Didier Domine, Peter Cuony, Julien Bailat
  • Publication number: 20110260164
    Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
    Type: Application
    Filed: November 18, 2009
    Publication date: October 27, 2011
    Applicant: UNIVERSITE DE NEUCHATEL
    Inventors: Didier Domine, Peter Cuony, Julien Bailat
  • Publication number: 20110226319
    Abstract: A multiple-junction photoelectric device includes a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting layer is deposited, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, top and bottom faces, the latter having a peak-valley roughness >150 nm, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom<?90top by at least 3; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination ?this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the surface of the bottom face of the intermediate layer have an inclination ?this angle.
    Type: Application
    Filed: November 18, 2009
    Publication date: September 22, 2011
    Applicant: UNIVERSITE DE NEUCHATEL
    Inventors: Thomas Soderstrom, Franz-Joseph Haug, Xavier Niquille
  • Publication number: 20110174371
    Abstract: A method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein the method is characterised in that it includes the step of texturing the crystalline silicon surface.
    Type: Application
    Filed: August 31, 2009
    Publication date: July 21, 2011
    Applicant: UNIVERSITÉ DE NEUCHÂTEL
    Inventors: Sara Olibet, Christian Monachon, Jérôme Damon-Lacoste, Christophe Ballif
  • Publication number: 20110058602
    Abstract: An identification method for a data Sk is disclosed which includes; a) construction of a chronological sequence {T1; . . . ; Ti; . . . ; TN} of times of arrival Ti of pulses or a block of successive pulses, b) calculation of a value of similarity between this sequence {T1; . . . ; Ti; . . . ; TN} and a predetermined chronological sequence {TREFk1; . . . ; TREFkj; . . . ; TREFkM} of times of arrival coding the data Sk for several time offsets Ol between the sequence {T1; . . . ; Ti; . . . ; TN} and the sequence {TREFk1; . . . ; TREFkj; . . . ; TREFkM}, c) identification of the data Sk in the series {T1; . . . ; Ti; . . . ; TN} if the calculated value of similarity for one of the time offsets Ol exceeds a predetermined threshold.
    Type: Application
    Filed: March 24, 2009
    Publication date: March 10, 2011
    Applicant: UNIVERSITE DE NEUCHATEL
    Inventors: Pierre-Andre Farine, Cyril Botteron, Roman Merz
  • Patent number: 7848456
    Abstract: This invention concerns a wireless data communication method, wherein a transmitter device having a first wide band antenna transmits ultra-wide band coded data signals to a receiver device having a second wide band antenna for receiving the direct and/or multiple path coded data signals. The transmitted data is defined by one or several sequences of N pulses where N is an integer number greater than 1. The arrangement of the N pulses of each sequence represents a data coding relative to the transmitter device. The N pulses of a sequence of direct and/or multiple path coded data signals received by the receiver device are processed each in one among N corresponding reception time windows. Each of the N reception time windows is positioned in time based on a known theoretic arrangement of the N pulses of signals transmitted by the transmitter device.
    Type: Grant
    Filed: December 21, 2004
    Date of Patent: December 7, 2010
    Assignee: Institut de Microtechnique Université de Neuchâtel
    Inventors: Roman Merz, Cyril Botteron, Pierre-André Farine
  • Publication number: 20100126575
    Abstract: The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.
    Type: Application
    Filed: February 13, 2007
    Publication date: May 27, 2010
    Applicant: UNIVERSITE DE NEUCHATEL
    Inventors: Julien Bailat, Christophe Ballif, Didier Domine
  • Patent number: 7390731
    Abstract: The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the metal intended to form the oxide, and a dopant in gaseous or liquid form, respectively; establishing a temperature between 130 and 300° C. and a pressure between 0.01 and 2 mbar in the chamber; and then bringing said sources into communication with the chamber, which has the effect of vaporizing the liquids at their surface, of drawing them up into the chamber without having to use a carrier gas, and of making them react therein with the dopant so that the oxide layer is formed on the substrate.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: June 24, 2008
    Assignee: Universite de Neuchatel, Institut de Microtechnique
    Inventors: Ulrich Kroll, Johannes Meier
  • Publication number: 20070147476
    Abstract: This invention concerns a wireless data communication method, wherein a transmitter device having a first wide band antenna transmits ultra-wide band encoded data signals to a receiver device having a second wide band antenna for receiving the direct and/or multiple path coded data signals. The transmitted data is defined by one or several sequences of N pulses where N is an integer number greater than 1. The arrangement of the N pulses of each sequence represents a data coding relative to the transmitter device. The N pulses of a sequence of direct and/or multiple path coded data signals received by the receiver device are processed each in one among N corresponding reception time windows. Each of the N reception time windows is positioned in time based on a known theoretic arrangement of the N pulses of signals transmitted by the transmitter device.
    Type: Application
    Filed: December 21, 2004
    Publication date: June 28, 2007
    Applicant: INSTITUT DE MICROTECHNIQUE UNIVERSITÉ DE NEUCHÂTEL
    Inventors: Roman Merz, Cyril Botteron, Pierre-Andre Farine
  • Patent number: 7051582
    Abstract: An actuating and sensing device for scanning probe microscopes includes a tuning fork (21) containing two prongs, a connection device (23) such as a spring, and a probing tip (22). The tip (22) is connected to both prongs of the tuning fork (21) with the connection device (23). The tuning fork (21) is used as a mechanical resonator to vibrate. The movements of the prongs are transformed via the connection device (23) into movements of the tip (22), wherein the tip movements can be in different planes than the movement plane of the prongs.
    Type: Grant
    Filed: April 15, 2002
    Date of Patent: May 30, 2006
    Assignee: Institut de Microtechnique de l'Universite de Neuchatel
    Inventor: Terunobu Akiyama
  • Patent number: 6884331
    Abstract: The invention relates to a method for depositing an adhesive PVC copolymer layer on a substrate, characterized in that it comprises the following steps: formation of a mixture of copolymer precursors in an organic solvent, whereby said mixture comprises PVC and 0.1-2 wt. % organotrialkoxysilane of formula H(HN—R1)x—R2—Si—(OR3)3, wherein R1 and R2 are alkyl groups or intermediate aromatic groups, R3 is an aryl group, the three substituents R3 cannot be the same and x is 0-2; a layer of said mixture is deposited on the substrate; the mixture is dried in order to evaporate the solvent; the aggregate thus obtained is heated to a temperature of 70-170° C. for a duration that respectively ranges from 3 hours and 5 minutes.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: April 26, 2005
    Assignee: Universite de Neuchatel
    Inventor: Peter Douwe Van Der Wal
  • Patent number: 6309906
    Abstract: The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes a mechanism (23) for extracting gas from the chamber (12) and a mechanism (18) for supplying gas. The device also comprises a mechanism for purification (31) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (12), purifying the gases using purification a mechanism (31), introducing these purified gases into the chamber (12), then creating a plasma between the electrodes (13, 14). A film of intrinsic microcrystalline silicon in then deposited on the substrate.
    Type: Grant
    Filed: June 30, 1998
    Date of Patent: October 30, 2001
    Assignee: Universite de Neuchatel-Institut de Microtechnique
    Inventors: Johann Meier, Ulrich Kroll
  • Patent number: 5589008
    Abstract: A photovoltaic cell (10) having a semiconductor substrate (11), a front passivation layer (12) arranged on the substrate, an emitter layer (14) having a first conductivity type (p or n), a front transparent conductive layer (15), a rear passivation layer (17) deposited on a rear surface of the substrate, a rear layer (18) producing a back surface field having a second conductivity type (n or p) opposite to the first conductivity type, as well as a reflecting element (19) comprised of a transparent conductive layer (20), an adhesion layer (21), and a reflecting layer (22). The disclosed cell has a substantially high efficiency a substantially low fabrication cost and is used in solar cells.
    Type: Grant
    Filed: May 31, 1995
    Date of Patent: December 31, 1996
    Assignee: Universite De Neuchatel
    Inventor: Herbert Keppner
  • Patent number: 5462839
    Abstract: This process consists of machining a silicon piece (4) by means of selective oxidation operations and photolithography to form therein at least one cavity (7, 12) adapted to contain or convey a fluid, and of oxidizing the wall of the cavity to make this hydrophilic. The device is completed by fixing closing plates (1, 5) to its body thus formed. Prior to the machining operations the surfaces of the piece (4) adapted to be in contact with the closing plates (1, 5) are covered with a screening layer that resists these machining operations. Then, after these have been completed, the surfaces of the piece intended to be exposed to the fluid are oxidized to form therein an oxide layer favoring the wettability of these surfaces. The screening layer is then removed and the closing plates are fixed to the piece.The invention has applications, notably in micropumps.
    Type: Grant
    Filed: May 23, 1994
    Date of Patent: October 31, 1995
    Assignee: Universite de Neuchatel
    Inventors: Nicolaas Frans de Rooij, Sylvain Jeanneret, Volker Gass, Bart van der Schoot