Patents Assigned to Universite Francois Rabelais UFR Sciences et Techniques
  • Vertical power component
    Patent number: 8901601
    Abstract: A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: December 2, 2014
    Assignees: STMicroelectronics (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Samuel Menard, Yannick Hague, Gaël Gautier
  • VERTICAL POWER COMPONENT
    Publication number: 20130228822
    Abstract: A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.
    Type: Application
    Filed: February 22, 2013
    Publication date: September 5, 2013
    Applicants: Universite Francois Rabelais UFR Sciences et Techniques, STMicroelectronics (Tours) SAS
    Inventors: Samuel Menard, Yannick Hague, Gaël Gautier
  • Bidirectional power switch controllable to be turned on and off
    Patent number: 8384154
    Abstract: A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·1011 cm?2 and 5·1012 cm?2.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: February 26, 2013
    Assignees: STMicroelectronics (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Jean-Baptiste Quoirin, Luong Viêt Phung, Nathalie Batut
  • ACOUSTIC GALVANIC ISOLATION DEVICE
    Publication number: 20120086305
    Abstract: An electroacoustic transducer including a first electrode formed on a substrate capable of transmitting ultrasounds, a membrane formed above the first electrode and separated therefrom by a cavity, a second electrode formed on the membrane, a first insulating layer on the second electrode, and a third electrode formed on the first insulating layer.
    Type: Application
    Filed: September 20, 2011
    Publication date: April 12, 2012
    Applicants: STMicroelectronics (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Sophie Ngo, Edgard Jeanne, Daniel Alquier
  • BIDIRECTIONAL POWER SWITCH CONTROLLABLE TO BE TURNED ON AND OFF
    Publication number: 20110121407
    Abstract: A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·1011 cm?2 and 5·1012 cm?2.
    Type: Application
    Filed: November 22, 2010
    Publication date: May 26, 2011
    Applicants: STMicroelectronis (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Jean-Baptiste Quoirin, Luong Viêt Phung, Nathalie Batut