Abstract: A method of forming a layered structure for adhering gold to a substrate is disclosed. The layered structure includes a first layer overlying the substrate. The first layer includes a member selected from the group consisting of metal nitrides, metal carbides and metal carbonitrides wherein the metal is selected from the group consisting of titanium, zirconium and hafnium. The layered structure also includes a transparent layer of refractory metal which overlies the first layer and underlies the gold or alloy thereof. The disclosed method includes forming the aforementioned first layer over the substrate and then forming the transparent layer of refractory metal on the first layer. Both the first layer and transparent layer are preferably formed or deposited on the substrate by a cathodic arc plasma deposition process. The method also includes forming a top layer of gold or an alloy thereof on the transparent layer, which gold layer is preferably formed or deposited by a magnetron sputtering process.

Abstract: A process for producing corrosion resistant and wear resistant medical tools and instruments by coating high strength low-carbon martensitic stainless steels with a thin, hard layer of refractory metal compound, preferably via cathodic arc plasma deposition technology. The invention also covers the coated medical tools produced via such process.

Abstract: A process for making an article comprising a substrate, a first coating on the surface of said substrate of a thin, hard coated metal compound, and a second coating on the surface of said first coat of a thin uniform conformal polymeric material.

Abstract: A superior method and magnetron sputtering cathode apparatus in which some of the flux lines forming the closed-loop magnetic tunnel are made to change their curvature from convex to slightly concave within a region of the tunnel intersecting the sputtering target volume, and over a substantial fraction of the tunnel width. The improved field shape reduces the tendency of the eroded area of the target to become narrower as erosion progresses, and thereby allows more complete consumption of the target.

Abstract: A superior method and magnetron sputtering cathode apparatus in which some of the flux lines forming the closed-loop magnetic tunnel are made to change their curvature from convex to slightly concave within a region of the tunnel intersecting the sputtering target volume, and over a substantial fraction of the tunnel width. The improved field shape reduces the tendency of the eroded area of the target to become narrower as erosion progresses, and thereby allows more complete consumption of the target.

Abstract: Apparatus for depositing a coating on at least one substrate where the coating includes at least two component materials where the relative percentages of the component materials with respect to each other varies through the thickness of the coating. The apparatus includes at least two deposition sources for respectively providing the two component materials, at least one mask having at least one aperture, the mask being disposed between at least one of said two deposition sources and the substrate, and a motion effecting mechanism for effecting relative motion between the substrate and the deposition sources to thus effect a predetermined variation of the relative percentages of the component materials as a function of at least the shape of the aperture in the mask.

Abstract: Method and apparatus for arc evaporating a large target having a surface area of at least about 20 square inches, including a device for confining the arc to the target surface and a magnetic field source for establishing at least one magnetic field in a predetermined direction over the target surface to thus direct the cathode spot of the arc in a direction substantially perpendicular to the direction of the magnetic field and accordingly effect substantially uniform evaporation of the target by the arc where the magnetic field may be either pulsed or continuous.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material of non-permeable material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring surrounding the target surface, the ring being composed of a magnetically permeable material to thereby confine the cathode spot to the target surface.

Abstract: Apparatus and method for evaporation arc stabilization including a permeable target having a surface of material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; a confinement ring contacting and surrounding the target surface, the ring being composed of a material such as boron nitride and a permeable ring surrounding the target for effecting substantially uniform evaporation of the permeable target material from the target surface.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring contacting and surrounding the target surface, the ring being composed of a material such as boron nitride having (a) a secondary emission ratio less than one at the mean energies of the charged particles of the arc and (b) a surface energy less than that of the evaporated target material to thereby confine the cathode spot to the target surface. The confinement ring is employed as a cover for a permeable ring to prevent migration of the cathode spot onto the permeable ring during initial clean-up of the target.

Abstract: A magnetron sputtering device wherein a plurality of magnetic field sources are employed to enhance uniformity of cathode sputtering. Each of the magnetic field sources is independently capable of establishing a discharge at the cathode if the other magnetic field sources are removed so that portions of a V-shaped erosion pattern produced by a primary discharge are also eroded to thus effect the more uniform cathode sputtering.In one embodiment of the invention, a magnetic field dome of a first polarity is disposed over a second magnetic field dome of the opposite polarity, the domes being disposed over the cathode so that a closed plasma loop is established, the loop including a first sputtering path which extends over the cathode and a second non-sputtering return path which is disposed over the sputtering path and between the first and second magnetic field domes.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material of non-permeable material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring surrounding the target surface, the ring being composed of a magnetically permeable material to confine the cathode spot to the target. The anode is closely spaced to the ring to prevent the arc from moving off the target and the ring, during initial arc cleaning of the target. In lieu of the magnetically permeable confinement ring, the anode itself may be permeable. Various configurations of the confinement ring are also disclosed together with various features for improving the operation thereof.

Abstract: Method and apparatus for sputtering an element with a magnetron plasma source where a plasma is formed between two generator cathode surfaces of the source and a generator anode disposed adjacent the plasma ejects it toward the element to be sputtered. Various applications are described including selective coating of substrates of different electrical conductivity, substrate cleaning, ion milling, retrieval of expensive or dangerous coating materials, heating with little loss in the heat source, sputtering with reactive ions, sensitization or charge neutralization, and pumping of active gases.

Abstract: A magnetron sputtering apparatus for high permeable materials where the target may include first and second elements separated from one another by a gap and the magnetic field source preferably exceeds 1000 gauss adjacent a pole thereof. The source is preferably a solid, oriented crystal ferrite magnet. A number of different configurations are disclosed.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring contacting and surrounding the target surface, the ring being composed of a material such as boron nitride having (a) a secondary emission ratio less than one at the mean energies of the charged particles of the arc and (b) a surface energy less than that of the evaporated target material to thereby confine the cathode spot to the target surface. Further, the secondary emission ratio of the confinement ring is preferably less than that of the target.

Abstract: Apparatus for sputtering a target including at least first and second elements spaced from one another by a gap; a plasma generator disposed in the gap; and a trapping magnetic field which confines at least some of the plasma adjacent the target where the target may comprise a magnetically permeable material. First and second magnets may generate the trapping magnetic field and a further field which includes a gap field across the gap where the gap field is utilized by the plasma generating means. If the target comprises a magnetically permeable material, the trapping field will pass through and over the target while the further field will pass sequentially through said first target element, the gap, and then the second target element.

Abstract: Method and apparatus for sputtering an element with a magnetron plasma source where a plasma is formed between two electrostatic field defining surfaces of the source and a generator anode disposed adjacent the plasma ejects it toward the element to be sputtered. Various applications are described including selective coating of substrates of different electrical conductivity, substrate cleaning, ion milling, retrieval of expensive or dangerous coating materials, heating with little loss in the heat source, sputtering with reactive ions, sensitization or charge neutralization, and pumping of active gases.

Abstract: A method and apparatus for establishing the magnetic field in a magnetically enhanced sputtering device wherein a predetermined plasma path is formed adjacent a layer of target material to be sputtered wherein a first component of the magnetic field is substantially perpendicular to the plasma path and a second component thereof is substantially parallel to the path. Various embodiments are described for generating the foregoing magnetic field components.

Abstract: Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate by providing a mask having a patterned opening therein between the cathode of a sputtering device and the substrate to be coated, the mask being so positioned as (a) to not affect the plasma over the cathode surface and (b) to be out of contact with the substrate surface, there being relative movement between at least the cathode and the substrate. The substrate may be either flat, curved or tubular, for example, there also being described apparatus and a method of making a broad band, dipole antenna.

Abstract: A magnetically enhanced sputtering device including magnet means for establishing a magnetic field where the lines of force thereof extend over and may pass through the cathode sputtering surface at one predetermined area thereof. Preferably, the majority of the lines of force passing through said predetermined area of the sputtering surface are inclined at angles of 45.degree. or less with respect to the surface. The magnet means may be disposed on the side of the cathode opposite the sputtering surface where the flux therein extends substantially parallel to the sputtering surface.