Abstract: An advanced copper bonding with ceramic substrate technology includes the steps of (1) forming a copper film of thickness <1 ?m on a ceramic substrate by sputtering deposition under 1.33×10?3 torr and 150° C., (2) plating a copper layer of thickness 10˜50 ?m at room temperature, and (3) bonding a copper foil to the ceramic substrate by diffusion bonding under environments of high temperature, vacuum, and negative pressure inertia gas or H2 partial pressure.