Abstract: Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to obtain the thin film aluminum alloy having a Vickers hardness of 30 Hv or less and a film stress (absolute value indication) of 30 kg/mm2 or less when performing annealing treatment at a temperature ranging from 25° C. to 500° C., wherein said hardness and said film stress are distributed in a predetermined hardness range and in a predetermined film stress range respectively within the temperature range of the above-mentioned annealing treatment and are respectively almost constant against annealing temperature, the thin film aluminum alloy being formed as a film on a substrate by a sputtering method using a sputtering target having a composition comprising 0.5 to 15 atom % of one or more types selected from Ag, Cu, Mg and Zn and 0.

Abstract: A titanium target assembly includes a titanium sputtering target, a copper or copper alloy backing plate and serving as a support member for the target and a silver or silver alloy coating film and formed between the target and backing plate. The coating film is formed on a surface subjected to cleaning treatment on the bonding side or sides of the target and backing plate by physical vapor deposition. The titanium target and backing plate are solid phase diffusion bonded. The face(s) serve as the bonding plane. The assembly can be manufactured by cleaning the surface(s) of the target and/or backing plate on bonding side(s), forming a coating film on the cleaned surface(s) on bonding side(s) and solid phase diffusion-bonding the target and backing plate, while using surface(s) provided with coated film as the bonding plane. The target assembly possesses high bonding strength and excellent bonding stability and reliability.

Abstract: Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to obtain the thin film aluminum alloy having a Vickers hardness of 30 Hv or less and a film stress (absolute value indication) of 30 kg/mm2 or less when performing annealing treatment at a temperature ranging from 25° C. to 500° C., wherein said hardness and said film stress are distributed in a predetermined hardness range and in a predetermined film stress range respectively within the temperature range of the above-mentioned annealing treatment and are respectively almost constant against annealing temperature, the thin film aluminum alloy being formed as a film on a substrate by a sputtering method using a sputtering target having a composition comprising 0.5 to 15 atom % of one or more types selected from Ag, Cu, Mg and Zn and 0.

Abstract: A titanium target assembly comprises a sputtering target of titanium, a backing plate composed of copper or a copper alloy and serving as a support member for the target and a coating film composed of silver or a silver alloy and formed between the target and the backing plate, wherein the coating film is formed on the surface subjected to a cleaning treatment on the bonding side of the target or on the bonding sides of the target and the backing plate according to the physical vapor deposition technique and the titanium target and the backing plate are solid phase diffusion bonded, while the face(s) provided with the coating film serves as the bonding plane. The titanium target assembly can be manufactured by a method comprising the steps of cleaning the surface(s) of the target and/or the backing plate on the bonding side(s) thereof, forming a coating film on the cleaned surface(s) on the bonding side(s) and solid phase diffusion-bonding the target and the backing plate at a pressure of not more than 0.

Abstract: A member made of glass, ceramics, a metal or the like which is used in vacuum in a vacuum treatment chamber is located in an inert gas atmosphere and an arc spray film of a metal is formed on a surface of the member by arc spraying the metal using an inert gas as a blowing gas. Argon gas is used as the inert gas and a member for a vacuum apparatus such a vacuum vessel is considered as the member made of glass, ceramics, a metal or the like.

Abstract: An apparatus for forming a thin film of ultra-fine particles on a base body having a fine hole or a groove with a large aspect ratio (larger than one). The ultra-fine particles are smaller than 0.1 &mgr;m in diameter and are made from evaporated material. An aerosol is formed by dispersing and floating the ultra-fine particles in a gas at a pressure higher than 102 Pa in an aerosol-forming chamber. The base body is held by a holding mechanism within a thin-film forming container. A vacuum system is connected to the thin-film forming container. The aerosol-forming chamber is placed in communication with the thin-film forming container so that the aerosol is applied onto the inner wall surface of the fine hole or the groove. As a result, the ultra-fine particles are diffused and adsorbed onto the inner wall surface.

Abstract: A dispersion containing Cu ultrafine particles individually dispersed therein comprises an organic solvent which is hardly evaporated at room temperature, but can be evaporated during a drying-firing step upon forming Cu-distributing wires on a semiconductor substrate and metal Cu-containing ultrafine particles having a particle size of not greater than 0.01 &mgr;m, in which the surface of the individual Cu ultrafine particles is surrounded by or covered with the organic solvent, these particles are independently dispersed in the solvent, and the dispersion has a viscosity of not higher than 50 cP at 20° C. The individual Cu ultrafine particle dispersion permits the complete embedding or filling of, for instance, fine wiring grooves, via holes and contact holes of LSI substrates with a Cu-thin film and thus permits the formation of a conductive, uniform and fine pattern on a substrate.

Abstract: A method for forming a Cu-thin film includes the steps of coating a dispersion containing Cu-containing ultrafine particles individually dispersed therein on a semiconductor substrate having recessed portions, such as wiring grooves, via holes or contact holes, which have an aspect ratio ranging from 1 to 30; firing the coated semiconductor substrate in an atmosphere which can decompose organic substances present in the dispersion, but never oxidizes Cu to form a Cu-thin film on the substrate; then removing the Cu-thin film on the substrate except for that present in the recessed portions to thus level the surface of the substrate and to form the Cu-thin film in the recessed portions. The method permits the complete embedding or filling of the recessed portions of LSI substrates having a high aspect ratio with a Cu-thin film and thus permits the formation of a conductive, uniform and fine pattern, and further requires a low processing cost.

Abstract: A method and apparatus for forming a thin film of ultra-fine particles on a base body having a fine hole or groove with a large aspect ratio (larger than one). The ultra-fine particles are smaller than 0.1 .mu.m in diameter and are made from evaporated material. An aerosol is formed by dispersing and floating the ultra-fine particles in a gas at a pressure higher than 10.sup.2 Pa in an aerosol-forming chamber. The base body is held by a holding mechanism within a thin-film forming container. A vacuum system is connected to the thin-film forming container. The aerosol-forming chamber is placed in communication with the thin-film forming container so that the aerosol is applied onto the inner wall surface of the fine hole or the groove. As a result, the ultra-fine particles are diffused and adsorbed onto the inner wall surface.

Abstract: A metal paste comprising ultrafine particles of a metal. The particles have a particle size of 1000 angstroms (0.1 micron) or less and are individually uniformly dispersed in an organic solvent. A process for producing a metal paste comprises the steps of evaporating a metal in a vacuum chamber in an atmosphere of an inert gas at a pressure of 10 Torr or less and of collecting the vapor of the evaporated metal on a cooling surface in the form of ultrafine particles having a particle size of 1000 angstroms (0.1 micron) or less, wherein a vapor of an organic solvent is introduced into the vacuum chamber while the metal is being evaporated. A method for preparing a metallic thin film having a thickness of between 0.01 micron and 1 micron uses a metal paste containing ultrafine metal particles having a diameter of 0.1 micron or less uniformly dispersed in an organic solvent. In the method, the metal paste is coated on a substrate, dried and sintered.

Abstract: Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.

Abstract: In a gas deposition apparatus includes: an ultra fine particle evaporation chamber; an evaporation source arranged in the ultra fine particle evaporation chamber; a deposition chamber; a substrate arranged in the deposition chamber; a transfer pipe connecting the ultra fine particle evaporation chamber with the deposition chamber; an inlet port of the transfer pipe directly facing to the evaporation source in the ultra fine particle evaporation chamber and an outlet port of the transfer pipe being in the deposition chamber; a nozzle connected to the outlet port of the transfer pipe, facing to the substrate in the deposition chamber; and an introducing port for introducing inert gas into the ultra fine particle evaporation chamber wherein ultra fine particles evaporated from the evaporation source by heating the latter, are transported together with inert gas through the transfer pipe and they are ejected out from the nozzle onto the substrate to form a film or condensation of ultra fine particle thereon, a DC

Abstract: A metal paste comprising ultrafine particles of a metal. The particles have a particle size of 1000 angstroms (0.1 micron) or less and are individually uniformly dispersed in an organic solvent. A process for producing a metal paste comprises the steps of evaporating a metal in a vacuum chamber in an atmosphere of an inert gas at a pressure of 10 Torr or less and of collecting the vapor of the evaporated metal on a cooling surface in the form of ultrafine particles having a particle size of 1000 angstroms (0.1 micron) or less, wherein a vapor of an organic solvent is introduced into the vacuum chamber while the metal is being evaporated. A method for preparing a metallic thin film having a thickness of between 0.01 micron and 1 micron uses a metal paste containing ultrafine metal particles having a diameter of 0.1 micron or less uniformly dispersed in an organic solvent. In the method, the metal paste is coated on a substrate, dried and sintered.

Abstract: A metal paste comprising ultrafine particles of a metal. The particles have a particle size of 1000 angstroms (0.1 micron) or less and are individually uniformly dispersed in an organic solvent.A process for producing a metal paste comprises the steps of evaporating a metal in a vacuum chamber in an atmosphere of an inert gas at a pressure of 10 Torr or less and of collecting the vapor of the evaporated metal on a cooling surface in the form of ultrafine particles having a particle size of 1000 angstroms (0.1 micron) or less, wherein a vapor of an organic solvent is introduced into the vacuum chamber while the metal is being evaporated.A method for preparing a metallic thin film having a thickness of between 0.01 micron and 1 micron. A metal paste containing ultrafine metal particles having a diameter of 0.1 micron or less uniformly dispersed in an organic solvent is coated on a substrate, dried and sintered.

Abstract: In a gas deposition apparatus including: an ultra fine particle evaporation chamber; an evaporation source arranged in the ultra fine particle evaporation chamber; a deposition chamber; a substrate arranged in the deposition chamber; a transfer pipe connecting the ultra fine particle evaporation chamber with the deposition chamber; an inlet port of the transfer pipe indirect facing relationship to the evaporation source in the ultra fine particle evaporation chamber and an outlet port of the transfer pipe being in the deposition chamber; a nozzle connected to the outlet port of the transfer pipe, facing the substrate in the deposition chamber; and an introducing port for introducing inert gas into the ultra fine particle evaporation chamber wherein ultra fine particles are evaporated from the evaporation source by heating the latter.

Abstract: An apparatus for removing a photo-resist covering from a substrate employs fine solid CO.sub.2 particles that are impacted on the substrate at high velocity to cause abrading of the photo-resist covering in the absence of damage or contamination of the substrate.