Patents Assigned to Varo Semiconductor, Inc.
  • Patent number: 4302651
    Abstract: An SCR circuit is provided in a high-voltage supply for energizing a magnetron that is assembled in a microwave oven. The high-voltage supply circuit includes a voltage step-up transformer. This transformer is arranged with a low-voltage secondary winding which is connected across the heater-cathode electrode of the magnetron and a high-voltage secondary winding which is coupled in series with a capacitor. The series combination of the capacitor and the high-voltage secondary is connected across the cathode and anode electrodes of the magnetron; and importantly, the high-voltage SCR circuit includes a number of series-connected SCR's electrically in shunt of the magnetron. A triggering circuit gates the high-voltage SCR circuit to the current-conducting state during a selected phase portion of an applied AC potential, in order to control the amount of power being supplied to the magnetron.
    Type: Grant
    Filed: June 21, 1979
    Date of Patent: November 24, 1981
    Assignee: Varo Semiconductor, Inc.
    Inventor: Walter L. Wills
  • Patent number: 4288912
    Abstract: Wafers of silicon semiconductor material are stacked, bonded and severed to form a plurality of semiconductor diodes. One or more capacitor bodies are physically and electrically joined with these diodes, either by means of the capacitor bodies themselves or by means of an intermediate lead frame structure, in order to facilitate the handling and processing of the assembly as a unit.
    Type: Grant
    Filed: September 11, 1978
    Date of Patent: September 15, 1981
    Assignee: Varo Semiconductor, Inc.
    Inventors: Walter L. Wills, Herchel A. Vaughn, Larry L. Miller
  • Patent number: 4194934
    Abstract: A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat.The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
    Type: Grant
    Filed: April 10, 1979
    Date of Patent: March 25, 1980
    Assignee: Varo Semiconductor, Inc.
    Inventors: Theodore A. Blaske, Ho Y. Yu
  • Patent number: 4179796
    Abstract: A potted transformer winding and a method of manufacturing the same are disclosed. The method of manufacture includes the steps of inserting a temporary core pin in a hollow bobbin, winding a first coil of wire on the bobbin, placing a bobbin sleeve over the bobbin, and winding a second coil of wire on the sleeve to form a transformer winding assembly. Other sleeves and coils can be provided if desired. The transformer winding assembly is located in the interior of a casing, the casing and winding are heated, the casing interior and winding are subjected to a vacuum, and a potting compound is introduced into the casing interior in continuation of the vacuum and heat. The potting compound then flows between the core pin and the bobbin to form an electrically insulative coating inside the bobbin hollow. After the casing, winding and potting compound have cooled, at least one hole is formed in the casing adjacent an end of the pin and the pin is removed from the bobbin casing.
    Type: Grant
    Filed: March 13, 1978
    Date of Patent: December 25, 1979
    Assignee: Varo Semiconductor, Inc.
    Inventor: Richard Allen
  • Patent number: 4161744
    Abstract: A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat.The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
    Type: Grant
    Filed: May 23, 1977
    Date of Patent: July 17, 1979
    Assignee: Varo Semiconductor, Inc.
    Inventors: Theodore A. Blaske, Ho Y. Yu
  • Patent number: 4015126
    Abstract: The specification discloses apparatus for intensifying and minifying X-ray images which includes a rectangular housing having opposed front and rear ends. A phosphorous screen is disposed in the front end of the housing for receiving X-ray images of an object irradiated by X-rays and in response thereto generating light images corresponding to the X-ray images. A mirror system is mounted within the housing adjacent the rear end for reflecting the light images back toward the front end of the housing. An image intensifying assembly is provided along one side of the housing for amplifying and minifying the reflected light images. A camera is located in the front end of the housing for recording the amplified and minified light images. Circuitry is provided for interrogating the operation of the camera and of various electronic circuits of the system in order to provide a visual indication of malfunction of the system.
    Type: Grant
    Filed: October 10, 1975
    Date of Patent: March 29, 1977
    Assignee: Varo Semiconductor, Inc.
    Inventor: James R. Herrington