Patents Assigned to VERSUM MATERIALS US, LLC
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Patent number: 11976740Abstract: A compact valve block for a chemical container wherein the coaxial valve block has a housing that can accommodate three valve control mechanisms thus allowing for quick and effective purging without the need for an additional external conduit, valves, and coaxial injector. The advantage is a greatly reduced amount of wetted surface area inside the valve block leading to a significant decrease in the time it takes to purge a system thus allowing for quicker times to change chemical containers.Type: GrantFiled: March 3, 2021Date of Patent: May 7, 2024Assignee: Versum Materials US, LLCInventors: Mason Seidl, Meredith Elaine Flickinger, Thomas William Piltz, Shawn S. Cable, David Ebeling, Charles Michael Birtcher
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Patent number: 11955341Abstract: Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide.Type: GrantFiled: March 10, 2020Date of Patent: April 9, 2024Assignee: Versum Materials US, LLCInventors: Jhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu
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Patent number: 11952465Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.Type: GrantFiled: September 29, 2020Date of Patent: April 9, 2024Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Matthew R. MacDonald, Xinjian Lei, Meiliang Wang
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Patent number: 11946148Abstract: Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.Type: GrantFiled: January 10, 2020Date of Patent: April 2, 2024Assignee: Versum Materials US, LLCInventors: Wen Dar Liu, Yi-Chia Lee
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Publication number: 20240103377Abstract: A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.Type: ApplicationFiled: October 15, 2020Publication date: March 28, 2024Applicant: Versum Materials US, LLCInventors: CHAO-HSIANG CHEN, CHUNG-YI CHANG, YI-CHIA LEE, WEN DAR LIU
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Patent number: 11932553Abstract: Condensable metal halide materials, such as but not limited to tungsten hexachloride and tungsten pentachloride can be used deposit films metal or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity tungsten hexachloride and tungsten pentachloride systems and methods to purify tungsten hexachloride and tungsten pentachloride raw materials. There is provided a purified tungsten hexachloride and tungsten pentachloride containing less than 10 ppm, preferably less than 5 ppm, more preferably less than 1 ppm, and most preferably less than 0.5 ppm of iron and/or molybdenum; and less than 10 ppm, preferably less than 5 ppm of all other trace metals combined including but not limited to aluminum, potassium and sodium.Type: GrantFiled: December 11, 2019Date of Patent: March 19, 2024Assignee: Versum Materials US, LLCInventors: Xiaoxi Wu, Sergei V. Ivanov, Neil Osterwalder
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Patent number: 11929257Abstract: Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.Type: GrantFiled: March 10, 2020Date of Patent: March 12, 2024Assignee: Versum Materials US, LLCInventors: Chung Yi Chang, Wen Dar Liu, Yi-Chia Lee
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Patent number: 11913112Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).Type: GrantFiled: January 27, 2022Date of Patent: February 27, 2024Assignee: Versum Materials US, LLCInventors: Xinjian Lei, Jianheng Li, John Francis Lehmann, Alan Charles Cooper
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Patent number: 11912730Abstract: Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.Type: GrantFiled: December 15, 2022Date of Patent: February 27, 2024Assignee: Versum Materials US, LLCInventors: Matthew R. MacDonald, John F. Lehmann
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Publication number: 20240052490Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono- or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.Type: ApplicationFiled: September 11, 2020Publication date: February 15, 2024Applicant: VERSUM MATERIALS US, LLCInventors: MANCHAO XIAO, WILLIAM ROBERT ENTLEY, DANIEL P. SPENCE, RAYMOND NICHOLAS VRTIS, JENNIFER LYNN ANNE ACHTYL, ROBERT GORDON RIDGEWAY, XINJIAN LEI
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Patent number: 11884859Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.Type: GrantFiled: July 16, 2021Date of Patent: January 30, 2024Assignee: Versum Materials US, LLCInventors: Matthias Stender, Agnes Derecskei, Bradley J. Brennan
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Publication number: 20240010915Abstract: Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.Type: ApplicationFiled: March 2, 2021Publication date: January 11, 2024Applicant: Versum Materials US, LLCInventors: CHAO-HSIANG CHEN, JHIH KUEI GE, YI-CHIA LEE, WEN DAR LIU
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Patent number: 11851756Abstract: Methods for forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate includes introducing into a reactor one or more compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.Type: GrantFiled: September 11, 2018Date of Patent: December 26, 2023Assignee: Versum Materials US, LLCInventors: Ming Li, Xinjian Lei, Raymond N. Vrtis, Robert G. Ridgeway, Manchao Xiao
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Publication number: 20230325751Abstract: A method for developing or improving a process for producing a product from a material comprising steps of acquiring the composition for at least two slurries as raw material data (17) for the CMP based manufacturing process and its relevant parameters (2) by using a Data Collecting computer (9); physically performing specific method steps of a CMP process; measuring relevant parameters of the used slurries and the physically performed CMP process to determine the CMP process performance by using the Data Collecting computer (9); analyzing the measured data about the relevant parameters with a specific software performed on an Analyzing computer (11) by creating for the software and applying with it a predictive model using Machine Learning to understand the intercorrelation of the different parameters and using the results to improve the CMP process performance and the resulting product quality of the CMP based manufacturing process.Type: ApplicationFiled: May 18, 2022Publication date: October 12, 2023Applicant: Versum Materials US, LLCInventors: Cesar Clavero, Vid Gopal, Ryan Clarke, Esmeralda Yitamben, Hieu Pham, Anupama Mallikarjunan, Rung-Je Yang, Shirley Lin, Hongjun Zhou, Joseph Rose, Krishna Murella, Lu Gan
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Patent number: 11755437Abstract: The gas supply system of this invention is furnished with a cylinder apparatus having a pneumatic valve that supplies process gas to a process chamber, and a solenoid valve that opens or closes said pneumatic valve by supplying or stopping the flow of valve actuating gas to said pneumatic valve; and a gas supply control apparatus that controls the actuation of the solenoid valve. In addition, said gas supply control apparatus comprises a main controller that controls the actuation of said solenoid valve during normal operation, and a sub-controller that senses an abnormal state of said main controller and if an abnormality is sensed, controls the actuation of said solenoid valve instead of said main controller.Type: GrantFiled: June 15, 2018Date of Patent: September 12, 2023Assignee: Versum Materials US, LLCInventors: Tae-Jun Lim, Jihoon Kim, Tae-Ug Kang
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Patent number: 11753420Abstract: Lanthanide compounds for vapor deposition having ?50.0 ppm, ?30.0 ppm, or ?10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.Type: GrantFiled: August 4, 2021Date of Patent: September 12, 2023Assignee: VERSUM MATERIALS US, LLCInventors: Neil Osterwalder, Sergei V. Ivanov
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Patent number: 11742200Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.Type: GrantFiled: October 14, 2021Date of Patent: August 29, 2023Assignee: VERSUM MATERIALS US, LLCInventors: Haripin Chandra, Xinjian Lei, Anupama Mallikarjunan, Moo-Sung Kim
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Patent number: 11732351Abstract: Described herein are conformal films and methods for forming a conformal metal or metalloid doped silicon nitride dielectric film wherein the conformal metal is zirconium, hafnium, titanium, tantalum, or tungsten. A method includes providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated; and optionally purge the reactor with an inert gas; and the steps are repeated until a desired thickness of the conformal metal nitride film is obtained.Type: GrantFiled: August 26, 2021Date of Patent: August 22, 2023Assignee: Versum Materials US, LLCInventors: Xinjian Lei, Moo-Sung Kim, Jianheng Li
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Patent number: 11735413Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.Type: GrantFiled: October 20, 2017Date of Patent: August 22, 2023Assignee: Versum Materials US, LLCInventors: Manchao Xiao, Daniel P. Spence, Richard Ho
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Patent number: 11725111Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).Type: GrantFiled: October 21, 2021Date of Patent: August 15, 2023Assignee: Versum Materials US, LLCInventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Joseph Karwacki, Bing Han, Mark Leonard O'Neill