Abstract: A dual-mode electron beam column (10) for selectably providing, in an electron beam lithography machine, a Gaussian beam for enhanced writing resolution and a variable shaped beam for enhanced writing throughput comprises a first aperture (13) for confining the beam, a first lens (14) for focussing the beam at a first image plane positioned in dependence on the beam mode, a beamshaping second aperture (15) positionable in the beam path in the shaped beam mode, a second lens (16) effective in the shaped beam mode to focus the beam in a second image plane, and a third aperture (17) in the second image plane to confine or shape the beam depending on mode. Variation of the shape of the shaped beam is achieved by a beam double deflector system (18) operable only in the shaped beam mode.