Abstract: The invention relates to microelectromechanical components, like microelectromechanical gauges used in measuring e.g. acceleration, angular acceleration, angular velocity, or other physical quantities. The microelectromechanical component, according to the invention, comprises, suitably bonded to each other, a microelectromechanical chip part sealed by a cover part, and at least one electronic circuit part. The aim of the invention is to provide an improved method of manufacturing a microelectromechanical component, and to provide a microelectromechanical component, which is applicable for use particularly in small microelectromechanical sensor solutions.

Abstract: The invention presents a micro-mechanical resonator, comprising two masses coupled in the direction of a common axis by a spring structure such, that the spring structure comprises a spring that couples at least a first bar connected to the masses and a second bar extending in the motion axis direction, said spring being arranged to bend in a direction perpendicular to the motion direction of the motion axis. The invention also relates to a micro-mechanical resonator matrix, a sensor and a navigation device.

Abstract: The invention relates to measuring devices used for measuring angular velocity, and more precisely, to vibrating micro-mechanical sensors of angular velocity. The sensor of angular velocity according to the invention comprises at least two seismic mass structures (1), (2), excitation structures (3), (4) and coupling seesaw type springs (6), (7). The objective of the invention is to provide an improved sensor structure, which enables reliable measuring with good efficiency particularly in small vibrating micro-mechanical angular velocity sensor solutions.

Abstract: The invention relates to measuring devices used in the measuring of acceleration and, more specifically, to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention contains a movable electrode (5) supported at an axis of rotation (7). The capacitance change in the pair of electrodes of the acceleration sensor, according to the present invention, is enhanced. The acceleration sensor structure, according to the present invention, enables improving the capacitance sensitivity of the pair of electrodes based on rotational motion and measuring acceleration with good performance in capacitive acceleration sensor designs.

Abstract: The present invention relates to measuring devices used in measuring physical quantities, such as acceleration, angular acceleration, or angular velocity, and, more precisely, to micromechanical motion sensors. The area, in the wafer plane, of a motion sensor component according to the present invention is smaller than the area of the motion sensor component having been dice cut and turned by 90°. Correspondingly, the height of the motion sensor component according to the present invention, the component having been turned by 90°, is smaller, in the direction of the joint, than the thickness of the wafer stack formed by the joined wafers. The object of the invention is to provide an improved method of manufacturing a micromechanical motion sensor, and to provide a micromechanical motion sensor suitable, in particular, for use in small micromechanical motion sensor solutions.

Abstract: The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. Through the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

Abstract: The invention relates to measurement devices used in the measurement of acceleration, and more specifically, to micromechanical acceleration sensors. The invention seeks to offer an improved method for the measurement of acceleration directed to three or two dimensions using a micromechanical acceleration sensor as well as an improved micromechanical acceleration sensor. Using this invention, the functional reliability of a sensor can be monitored in constant use, and it is suitable for use particularly in small-sized micromechanical acceleration sensor solutions measuring in relation to several axes.

Abstract: The invention relates to measuring devices used in measuring angular velocity, and, more specifically, to oscillating micro-mechanical sensors of angular velocity. In the sensor of angular velocity according to the present invention seismic masses (1), (2), (36), (37) are connected to support areas by means of springs or by means of springs and stiff auxiliary structures, which give the masses (1), (2), (36), (37) a degree of freedom in relation to an axis of rotation perpendicular to the plane of the wafer formed by the masses, and in relation to at least one axis of rotation parallel to the plane of the wafer. The structure of the sensor of angular velocity according to the present invention enables reliable and efficient measuring particularly in compact oscillating micro-mechanical sensors of angular velocity.

Abstract: The present invention relates to measuring devices used in measuring acceleration and, more precisely, to capacitive acceleration sensors. The object of the invention is to provide an improved method of manufacturing a capacitive acceleration sensor, and to provide a capacitive acceleration sensor, which is applicable for use in small capacitive acceleration sensor solutions, and which, in particular, is applicable for use in small and extremely thin capacitive acceleration sensor solutions measuring acceleration in relation to several axes.

Abstract: The invention relates to measuring devices used in the measurement of acceleration and, more specifically, to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention contains a movable electrode (5) of the acceleration sensor supported at an axis of rotation (7). Several pairs of electrodes are utilized in the acceleration sensor according to the present invention. Advantages of symmetry are achieved with the acceleration sensor structure according to the present invention, and it enables reliable and efficient measuring of acceleration, in particular in small capacitive acceleration sensor designs.

Abstract: The present invention relates to measuring devices used in measuring acceleration, and, more specifically, to capacitive acceleration sensors. The improved sensor arrangement of the invention enables reliable and effective measuring of acceleration, in small capacitive acceleration sensor designs, in particular. The acceleration sensor arrangement measuring circuitry of the present invention can also be applied for multi-terminal sensors, such as, for example, acceleration sensors with three axes, by using time division signal multiplexing.

Abstract: The present invention relates to measuring devices used in measuring angular velocity and, more specifically, to oscillating micro-mechanical sensors of angular velocity. In the sensors of angular velocity according to the present invention, at least one pair of electrodes is provided in association with an edge of a seismic mass (1), (9), (10), (20), (30), (31), which pair of electrodes together with the surface of the mass (1), (9), (10), (20), (30), (31) form two capacitances such, that one of the capacitances of the pair of electrodes will increase and the other capacitance of the pair of electrodes will decrease as a function of the angle of rotation in the primary motion of the mass (1), (9), (10), (20), (30), (31). The structure of a sensor of angular velocity according to the present invention enables reliable and efficient measuring particularly in solutions for compact oscillating micro-mechanical sensors of angular velocity.

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.

Abstract: The invention relates to measuring devices for the measuring of pressure, and more specifically to capacitive pressure sensors. The silicon crystal planes {111} are located at the corners of a wet etched membrane well of a pressure sensor element according to the present invention. An object of the invention is to provide an improved method of manufacturing a capacitive pressure sensor, and a capacitive pressure sensor suitable for use, in particular, in small capacitive pressure sensor solutions.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

Abstract: This publication discloses a method for creating a sensor construction. According to the method, on top of a conducting substrate (2), an insulating layer (5) is formed and connected to the micromechanical construction. According to the invention, the insulating layer (5) is formed to be thicker (14) in the support area (16) than in the other areas, or thinner (13) in the area of the electrode (8) than in the support area (16) of the sensor.