Patents Assigned to Wacker Siltronic AG
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Publication number: 20040118334Abstract: A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.Type: ApplicationFiled: December 10, 2003Publication date: June 24, 2004Applicant: Wacker Siltronic AGInventors: Martin Weber, Wilfried von Ammon, Herbert Schmidt, Janis Virbulis, Yuri Gelfgat, Leonid Gorbunov
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Publication number: 20040083947Abstract: A process for producing a silicon single crystal which is doped with highly volatile foreign substance by pulling the single crystal from a melt which is held under predetermined process conditions in a crucible. A quantity of the foreign substance N0 is added in order to achieve a desired resistance of the melt, and the melt, after a time t, is after-doped at least once with a quantity &Dgr;N(t) of the foreign substance, in order to compensate for losses caused by the foreign substance evaporating out of the melt.Type: ApplicationFiled: October 21, 2003Publication date: May 6, 2004Applicant: Wacker Siltronic AGInventors: Martin Weber, Peter Vilzmann, Erich Gmeilbauer, Robert Vorbuchner
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Publication number: 20040043709Abstract: A process for machining a wafer-like workpiece between two plates, in which material is abraded from the workpiece under the influence of an auxiliary substance supplied and of a weight acting on the workpiece. In this process, the load on the workpiece from the weight is significantly reduced and then increased again at least once during the machining of the workpiece, and the supply of the auxiliary substance is reduced as the weight is increased.Type: ApplicationFiled: June 27, 2003Publication date: March 4, 2004Applicant: Wacker Siltronic AGInventors: Timon Heimes, Hermann Dumm
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Publication number: 20030200867Abstract: A method for avoiding the spontaneous ignition of combustible dusts in process off-gases, wherein during the process the dusts are retained, without adversely affecting the process parameters, at least one sintered filter element which is arranged in a pressure vessel and is able to withstand temperatures of up to at least 250° C. and after the process has ended the dusts are inerted by blasting oxygen-containing gas back into the pressure vessel, and to a device for carrying out the method.Type: ApplicationFiled: April 10, 2003Publication date: October 30, 2003Applicant: WACKER SILTRONIC AGInventors: Franz Becker, Lothar Lehmann, Horst Wachtler
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Publication number: 20030192470Abstract: A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of −10% to +10%. There is also a process for producing a doped semiconductor wafer by float zone pulling of a single crystal and dividing up the single crystal, in which process, during the float zone pulling, a molten material which is produced using an induction coil is doped with a dopant. It is exposed to at least one rotating magnetic field and is solidified. The single crystal which is formed during the solidification of the molten material is rotated. The single crystal and the magnetic field are rotated with opposite directions of rotation and the magnetic field has a frequency of 400 to 700 Hz.Type: ApplicationFiled: April 10, 2003Publication date: October 16, 2003Applicant: Wacker Siltronic AGInventors: Rolf Knobel, Wilfried Von Ammon, Janis Virbulis, Manfred Grundner
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Publication number: 20030172864Abstract: In the manufacture of a silicon single crystal by the Czochralski method, there is provided a seed crystal for use in the production of the silicon single crystal. This seed crystal is capable of preventing creation of a dislocation occurring during the immersion of the seed crystal in the molten silicon and withstanding the load of a silicon single crystal of great weight as well. There is also a method for the production of the seed crystal and a method for the production of a silicon single crystal which enables the ratio of elimination of dislocation to be increased.Type: ApplicationFiled: December 11, 2002Publication date: September 18, 2003Applicant: WACKER SILTRONIC AGInventors: Masahiro Tanaka, Yutaka Kishida, Teruyuki Tamaki, Hideo Kato, Seiki Takebayashi
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Publication number: 20030154906Abstract: A process for producing a highly doped silicon single crystal by pulling the single crystal from a molten material which contains dopant and is held in a rotating crucible. Growth fluctuations during the pulling of the single crystal are limited to an amount of −0.3 mm/min to 0.3 mm/min.Type: ApplicationFiled: February 20, 2003Publication date: August 21, 2003Applicant: WACKER SILTRONIC AGInventors: Martin Weber, Erich Gmeilbauer, Robert Vorbuchner
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Publication number: 20030145781Abstract: A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.Type: ApplicationFiled: January 24, 2003Publication date: August 7, 2003Applicant: WACKER SILTRONIC AGInventor: Wilfried Von Ammon
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Publication number: 20030148634Abstract: A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality 1 [ Oi ] < [ Oi ] eq ⁢ ( T ) ⁢ exp ⁢ ( 2 ⁢ σ SiO 2 ⁢ Ω rkT )Type: ApplicationFiled: February 4, 2003Publication date: August 7, 2003Applicant: Wacker Siltronic AG.Inventors: Robert Holzl, Christoph Seuring, Reinhold Wahlich, Wilfried Von Ammon
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Publication number: 20030145780Abstract: A silicon single crystal which has been produced using the Czochralski method has a <113 > orientation.Type: ApplicationFiled: January 27, 2003Publication date: August 7, 2003Applicant: WACKER SILTRONIC AGInventors: Dirk Dantz, Wilfried Von Ammon, Dirk Zemke, Franz Segieth
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Publication number: 20030140852Abstract: A method and a device for regulating a pressure in an epitaxy reactor, wherein the epitaxy reactor has a wafer handling chamber WHC, a process chamber PC, and a gate valve GV connecting the two chambers. The wafer handling chamber is continuously purged with inert gas. The pressure difference between the wafer handling chamber and the process chamber is measured, and the resulting measurement signal is used in a control circuit to regulate the pressure in the wafer handling chamber. In this case the pressure in the wafer handling chamber is reduced if the pressure difference is above a predetermined value and the pressure in the wafer handling chamber is increased if the pressure difference is below a predetermined value. The predetermined pressure difference is defined as a pressure being between 5 and 500 PA. The WHC and the PC each have a gas discharge line and a gas input line.Type: ApplicationFiled: December 27, 2002Publication date: July 31, 2003Applicant: Wacker Siltronic AGInventors: Anton Schatzeder, Georg Brenninger
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Publication number: 20030113488Abstract: A device for holding a molten semiconductor material, includes a crucible made from quartz glass and a susceptor which at least partially comprises CFC and which supports the crucible and an inner surface having a base, a cylindrical section and a curved section between the base and the cylindrical section, and a thin, sheet-like and flexibly deformable graphite film which is arranged between the crucible and the susceptor and forms a gastight barrier.Type: ApplicationFiled: December 13, 2002Publication date: June 19, 2003Applicant: WACKER SILTRONIC AGInventor: Erich Tomzig
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Publication number: 20030089301Abstract: A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.Type: ApplicationFiled: October 30, 2002Publication date: May 15, 2003Applicant: Wacker Siltronic AGInventors: Yutaka Kishida, Teruyuki Tamaki, Seiki Takebayashi, Wataru Ohashi
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Patent number: 6131739Abstract: A fracture-proof container for wafer discs including two half-shells having a substantially rectangular cross-section and each including a plurality of substantially rectangular chambers, a substantially rectangular opening formed in a bottom of each chamber, limiting walls surrounding the chambers, and a plurality of substantially rectangular ribs formed on an outer side of each half-shell.Type: GrantFiled: May 12, 1998Date of Patent: October 17, 2000Assignee: Wacker Siltronic AGInventor: Claus Baier