Abstract: A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 &mgr;m×1 &mgr;m reference area. Furthermore, there is a process for producing the semiconductor wafer.