Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.

Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.

Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A method for fabricating a light emitting diode (LED) chip is provided. First, a substrate is provided. A buffer layer is formed on the substrate. The buffer layer is patterned to form a plurality of recesses on a surface thereof. A first type semiconductor layer is formed on the surface of the buffer layer. A portion of the surface where the first type semiconductor layer and the buffer layer are in contact constitutes a bonding surface, and voids exist between the buffer layer and the first type semiconductor layer. An active layer and a second type semiconductor layer are formed on the first type semiconductor layer in sequence. A second electrode is formed on the second type semiconductor layer. A lift-off process is performed to separate the first type semiconductor layer and the buffer layer.

Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A tunable laser system is provided. The tunable laser system includes a light source, a grating, a corner mirror array, and a receiver. In which, the light source emits a beam, and the grating is located in front of the light source for reflecting the beam to form a first reflective beam. Also, the corner mirror array is located in front of the grating for receiving the first reflective beam and forms a second reflective beam accordingly. In addition, the receiver is used to receive a third reflective beam formed from reflecting the second reflective beam through the grating.

Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.

Abstract: A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided.

Abstract: A grating manufactured by a micro-structure gap control technique is provided in this invention. The grating includes a first structural part, a second structural part and a substrate. The first structural part includes a first micro-structure and a concavity, the second structural part includes a second micro-structure and an island structure located within the concavity, wherein a gap exists between the inland structure and the concavity. Further, the substrate is bonded to the first structural part and the second structural part for supporting the first structural part and the second structural part.

Abstract: A method for manufacturing a grating is provided. The method includes the steps as follows: a) forming a first insulating layer on a substrate; b) forming a silicon oxide layer on the first insulating layer; c) forming and hard baking a photoresist on the silicon oxide layer for defining a plurality of specific zones; d) etching the first insulating layer and the silicon oxide layer within the specific zones respectively for forming a plurality of concaves; e) forming a second insulating layer on the silicon oxide layer; f) defining a plurality of grating zones onto the second insulating layer, and forming an adhesive layer and a conductive layer on the grating zones in sequence; g) removing parts of the second insulating layer located outside of the grating zones; and h) removing the silicon oxide layer for exposing a plurality of grating structures within the grating zone.

Abstract: A two-axis device is provided. The two-axis device includes a first substrate having a plurality of electrodes, a first connecting layer located on the first substrate, an actuating layer, a second connecting layer and a cover. The actuating layer is connected to the first substrate via the first connecting layer and includes a circular portion, an actuating portion, a first shaft and a second shaft. The second connecting layer is connected to the actuating layer and the cover is connected to the actuating layer via the second connecting layer. In addition, a vacuum concavity is formed by the first substrate, the first connecting layer, the actuating layer, the second connecting layer and the cover. The actuating portion and the first shaft are located in the vacuum concavity, and the second shaft extends outside of the vacuum concavity.

Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided.

Abstract: The optical microelectromechanical components and the fabrication method thereof are provided. The method for fabricating an optical microelectromechanical component includes steps of (a) providing a substrate; (b) depositing an oxide layer on the substrate as a first mask; (c) performing a plurality of first etchings on the substrate to form a plurality of trenches with a plurality of depths; (d) depositing a first polysilicon layer on the trenches to form refilled trenches.

Abstract: A clay mixture containing aluminum compounds is provided. The clay mixture includes an aluminum compound in a range from about 10% to about 90% by weight of the clay mixture; a clay in a range from about 5% to 60% by weight of the clay mixture; and a first and a second surfactants, wherein an amount of the first and the second surfactants is in a rage from about 0.2 to about 30% by weight of the clay mixture.

Abstract: A fiber measurement system for obtaining a fiber bending loss data of a moving fiber when compared with a static fiber is provided.

Abstract: A tunable laser system is provided. The tunable laser system includes a light source, a grating, a corner mirror array, and a receiver. In which, the light source emits a beam, and the grating is located in front of the light source for reflecting the beam to form a first reflective beam. Also, the corner mirror array is located in front of the grating for receiving the first reflective beam and forms a second reflective beam accordingly. In addition, the receiver is used to receive a third reflective beam formed from reflecting the second reflective beam through the grating.