Abstract: A recipe construction system, a recipe construction method, a computer readable recording media with stored programs, and a non-transitory computer program product are provided. A dimension reduction module obtains dimension-reduced composition information according to composition information of each piece of historical recipe information and a dimension reduction algorithm. A neural network module obtains a plurality of trained neural network parameters according to the composition information and the dimension reduction composition information. The neural network module obtains dimension-reduced initial composition information according to the trained neural network parameters and initial composition information. A search module searches the historical recipe information for a first quantity of pieces of candidate recipe information.

Abstract: An illumination device comprising a reflector and a light source module is provided. The light source module comprises a column, a first light-emitting diode (LED) light source, and a second LED light source. The column has a front end and a side. The first LED light source fixed to the front end of the column is configured to emit a first light beam for forming a first illumination area on a projection plane. The second LED light source fixed to the side of the column is configured to emit a second light beam for forming a second illumination area partly overlapping the first illumination area on the projection plane.

Abstract: A light source module comprising a substrate and a light-emitting diode (LED) array is provided. The LED array comprises a first LED sub-array, a second LED sub-array, and a third LED sub-array disposed on the substrate along a horizontal axis. The first LED sub-array is configured to emit a first light beam. The second LED sub-array is configured to emit a second light beam. The third LED sub-array disposed between the first and second LED sub-arrays is configured to emit a third light beam. The first, second, and third light beams jointly forms a light area. Luminance of the third light beam is less than luminance of the first light beam or luminance of the second light beam.

Abstract: A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.

Abstract: A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 ?m to about 7 ?m is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.

Abstract: The present invention provides a torsion resistant shielded cable which includes at least one conductor; an insulating layer covering outside the conductor; a first isolating layer surrounding the insulating layer; and a shielded layer including a number of wires, single wires or strand wires, wound around the first isolating layer in a clockwise and counter-clockwise alternative order along an axial direction of the conductor to prevent the strand wires from breaking while the torsion resistant shielded cable is twisted.

Abstract: A light emitting diode device is provided. The light emitting diode device comprises a light emitting diode element, an encapsulation layer, and a plurality of pillars. The encapsulation layer is disposed on the light emitting diode element, and the pillars are disposed on the encapsulation layer. The pillars are formed by a light transmissible material.

Abstract: A laser lighting device, including a laser light source and a light pipe, is disclosed. The laser light source can produce a laser beam with a diffusion angle not larger than 30 degrees. The light pipe is disposed in a light path of the laser beam, and has a light incident surface, a light exiting surface and several cut planes. The light incident surface is opposite to the laser light source, and the cut planes are located between the light incident and light exiting surfaces. Each of the cut planes is normal to the longitudinal direction of the light pipe, and has an area smaller than that of the light exiting surface but larger than that of the light incident surface. The areas of the cut planes increase sequentially along the longitudinal direction. The laser beam will be effectively collimated by the light pipe after passing through the light pipe.

Abstract: A light emitting diode device is provided. The light emitting diode device comprises a light emitting diode element, an encapsulation layer, and a plurality of pillars. The encapsulation layer is disposed on the light emitting diode element, and the pillars are disposed on the encapsulation layer. The pillars are formed by a light transmissible material.

Abstract: A light guide plate with an adjustable illumination angle and an illumination device using the same are provided. The light guide plate has a first surface and a second surface opposite to the first surface. The second surface further has a plurality of deformable microstructures thereon. The deformable microstructures will be deformed when an external force is applied to the deformable microstructures. The illumination device has a light source and a light guide plate that is disposed next to the light source. A light beam emitted from the light source enters into the light guide plate and leaves the light guide plate via reflecting or refracting by the deformable microstructures. By applying a different external force to the light guide plate, the deformation of the deformable microstructures will be varied. Therefore, the illumination angle of the light beam could be changed according to the deformation of the deformable microstructures.

Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

Abstract: A light emitting diode (LED) and a manufacturing method thereof are provided. The LED comprises a semiconductor composite layer and an electrode. The semiconductor composite layer provides holes and electrons and allows the holes and the electrons to be combined to emit light. The electrode is formed on the semiconductor composite layer, wherein the electrode contains 30%˜98% of aluminum.

Abstract: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.

Abstract: A light emitting diode unit comprising a light emitting diode chip, a reflecting unit, and a light condenser is provided in this invention. The light emitting diode chip is disposed on a substrate for providing a plurality of first light beams. The reflecting unit is installed on the substrate, surrounding the light emitting diode chip for reflecting the first light beams emitted from the light emitting diode chip, and sufficiently directing the first light beams upward. The light condenser is provided above the light emitting diode chip, having a light-incident pattern and a light-emitting flat plane, wherein the light-incident pattern faces to the light emitting diode chip for sufficiently receiving and guiding the first light beams upward via the light-emitting flat plane.

Abstract: A substrate for carrying light emitting diodes and a manufacturing method thereof are provided. The substrate includes a bottom portion, a side portion and a reflective element. The side portion is disposed on the bottom portion. An upper surface of the bottom portion and an inner surface of the side portion define a recess where the light emitting diodes and the reflective element are disposed. More specifically, the light emitting diodes are disposed on the upper surface, while the reflective element is disposed along the inner surface of the recess. With the above-mentioned arrangements, the light extraction efficiency of the light emitting diodes can be increased.

Abstract: A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for the packaging lens. Thickness of phosphor layer can be controlled and distribution of phosphor particles is uniform. Therefore, light emitting diode packages with the lens can be a uniform light source.

Abstract: A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 ?m to about 7 ?m is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.

Abstract: A light emitting diode device is provided. The light emitting diode device comprises a light emitting diode component and an encapsulation layer. The encapsulation layer is disposed surrounding the light emitting diode component. The encapsulation layer comprises an encapsulation gel layer and a plurality of micro-particles distributed in the encapsulation gel layer. The difference between the refractive index of the encapsulation gel layer and the refractive index of the micro-particles is smaller than or equal to 0.05.

Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.