Abstract: A vent assembly for a chemical vapor deposition system which includes an injector which injects gaseous substances into a reaction chamber for depositing a film on a substrate positioned in the chamber. The vent assembly includes at least one vent having an inlet, an outlet spaced from the inlet and oriented such that the plane of the outlet intersects the inlet, and a passageway joining the inlet and the outlet. The passageway has a linear first stretch substantially axially aligned with the inlet and having a substantially uniform cross-sectional area along the length thereof. The passageway has a nonlinear second stretch joining the first stretch to the outlet. The second stretch is shaped so that changes in direction of the gas flow through the vent are removed from the region of the passageway which is substantially axially aligned with the inlet.

Abstract: A method of manufacturing an injector for chemical vapor deposition (CVD) processing is provided. The method comprises the steps of selecting an elongated member of solid material having first and second ends and a gas delivery surface. At least one elongated passage for receiving a gas is formed in the elongated member and extending between the ends. At least one elongated distribution channel is formed by wire electrode discharge machining (EDM) extending from the elongated passage to the gas delivery surface for providing gas to the gas delivery surface.

Abstract: Amorphously crosslinked aromatic polymeric low .kappa. materials and methods for their fabrication are provided. The subject materials are prepared by a modified transport polymerization process, in which aromatic precursors are pyrolyzed to produce radical comprising aromatic monomeric precursors which are then allowed to polymerize by deposition onto a substrate surface, where during and/or after deposition the growing polymer chain is exposed to a high energy crosslinking agent, such as high energy photons or plasma. The subject crosslinked materials find use in a variety of applications, particularly as low .kappa. dielectrics in the manufacture of integrated circuits.

Abstract: A rotational support assembly for holding and rotating an article. The assembly includes a support member for holding the article and a drive mechanism for rotating the support member. A drive shaft couples the drive mechanism directly to the support member. The assembly also includes a vacuum system including at least one passageway formed in the support member and the drive shaft. The passageway extends between an inlet in the shaft for coupling the passageway to a vacuum source and an outlet opening connected to the surface of the support member for holding the article against the support member by a vacuum.

Abstract: A method of reducing metal contamination during semiconductor processing in a reactor having metal components is provided. The method includes forming an aluminum oxide layer on the surface of certain of the metal components before processing of substrates. The aluminum oxide layer substantially prevents the formation of volatile metal atoms from the metal components. The aluminum oxide layer is formed by heating the metal component first in a dry N.sub.2 atmosphere to a first temperature, and then in a dry H.sub.2 atmosphere to a second temperature. The component is then soaked at the second temperature in a wet H.sub.2 atmosphere to form the aluminum oxide layer, and is followed by soaking at the second temperature in a dry H.sub.2 atmosphere to reduce any other metal oxides that may have formed. The component is then cooled first in a dry H.sub.2 atmosphere, and then in a dry N.sub.2 atmosphere where a layer of substantially pure aluminum oxide is provided on the surface of the metal component.

Abstract: A plasma generating source for processing semiconductor integrated circuits is provided. The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a plasma containing region and a source of electromagnetic energy for generating a plasma. An electrostatic shield is disposed between the source of electromagnetic energy and the plasma containing region. The electrostatic shield has a plurality of openings therethrough configured to control the amount and distribution of electromagnetic energy coupled from the source into the plasma containing region. The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma.

Abstract: A method and apparatus for securely clamping a substrate to an electrostatic chuck during processing of a substrate. The method generally includes the steps of forming an initial electrostatic clamping force between the electrostatic chuck and the substrate, modifying the initial electrostatic clamping force when an rf voltage is applied to the electrostatic chuck during processing, and restoring the initial electrostatic clamping force with an offset voltage applied to the electrostatic chuck. The present invention also includes an electrostatic chuck having at least one electrode and a dielectric on the surface of the electrode for supporting a substrate. A voltage source is coupled to the electrode for electrostatically clamping the substrate to the surface of the electrostatic chuck with an initial electrostatic force. An rf source is coupled to the electrode for applying rf voltage to the electrostatic chuck and causing a change in the initial electrostatic force.