Patents Assigned to Wonik IPS Co., Ltd.
  • Publication number: 20230073851
    Abstract: The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The substrate processing apparatus of the present invention includes: a process chamber (100) including a chamber body (110) which has an opened upper portion and in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and a gate (111) configured to load/unload a substrate (1) is disposed at one side thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 9, 2023
    Applicant: WONIK IPS CO., LTD.
    Inventors: Tae Dong KIM, Jung Hwan LEE, Cheong Hwan JEONG, Sung Ho ROH, Young Jun KIM
  • Publication number: 20230072156
    Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including; a process chamber (100) comprising a chamber body (110) which has an opened upper portion, in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and which comprises a gate (111) for loading/unloading a substrate (1) is disposed at one side thereof and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space, a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 9, 2023
    Applicant: WONIK IPS CO., LTD.
    Inventors: Sung Ho ROH, Jung Hwan LEE, Cheong Hwan JEONG, Tae Dong KIM, Young Jun KIM, Moon Chul KUM, Chan Soo PARK, Mi Sook KIM, Yong Ki KIM
  • Publication number: 20220411923
    Abstract: The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P1) to a second pressure (P2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.
    Type: Application
    Filed: December 14, 2021
    Publication date: December 29, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Ah Young HWANG, Won Jun JANG, Joo Suop KIM, Kyung PARK, Jin Seo KIM, Won Sik AHN, Dae Seong LEE, Chang Hun KIM
  • Patent number: 11482452
    Abstract: In a method of forming a contact plug in a semiconductor integrated circuit device, the contact plug may be formed in a process chamber of a substrate-processing apparatus. The process chamber may have a process space. The process chamber may include a substrate supporter placed in a lower region of the process space to support a semiconductor substrate, and a gas injector placed in an upper region of the process space to inject a gas to the semiconductor substrate. An insulating interlayer having a contact hole may be formed on the semiconductor substrate loaded into the process space. A nucleation layer may be formed on an inner surface of the contact hole and an upper surface of the insulating interlayer. A semi-bulk layer may be formed on the nucleation layer in a lower region of the contact hole. An inhibiting layer may be formed on the semi-bulk layer and the exposed nucleation layer. A main-bulk layer may be formed on the semi-bulk layer to fill the contact hole with the main-bulk layer.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: October 25, 2022
    Assignee: WONIK IPS CO., LTD
    Inventors: Won Jun Yoon, Woo Hoon Sun, Seok Kyu Choi, Tae Sung Han, Dong Woo Kim, Jin Wu Park
  • Publication number: 20220319853
    Abstract: Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.
    Type: Application
    Filed: December 14, 2021
    Publication date: October 6, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Ah Young HWANG, Won Jun JANG, Joo Suop KIM, Kyung PARK, Sang Rok NAM, Hae Jin AHN, Dae Seong LEE, Chang Hun KIM
  • Patent number: 11450531
    Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: September 20, 2022
    Assignee: WONIK IPS CO., LTD.
    Inventors: Jun Hyuck Kwon, Jin Sung Chun, Sang Jun Park, Byung Chul Cho, Kwang Seon Jin
  • Publication number: 20220165548
    Abstract: A gas supply block may include a first block, a second block and a third block. The first block may include a first gas inlet passage configured to supply a first process gas. The second block may include a second gas inlet passage configured to supply a second process gas. The third block may be combined with the first block and the second block. The third block may be configured to diffuse and supply the first process gas and the second process gas into gas supply lines connected to the processing spaces.
    Type: Application
    Filed: November 2, 2021
    Publication date: May 26, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventor: Byoung Ho SONG
  • Publication number: 20220157644
    Abstract: A substrate supporting assembly includes a susceptor plate including at least one substrate seat, and a plurality of gas flow lines for supplying a lifting gas, an acceleration gas, and a deceleration gas to the substrate seat, and at least one satellite on the at least one substrate seat and including an upper surface, and a lower surface where a rotation pattern for receiving a rotational force and a braking force from the acceleration gas and the deceleration gas is provided. The at least one satellite is lifted from the at least one substrate seat by the lifting gas supplied from the at least one substrate seat, is rotated relative to the susceptor plate by the acceleration gas supplied in a forward direction of rotation, to rotate the substrate, and is decelerated or stopped by the deceleration gas supplied in a reverse direction of rotation.
    Type: Application
    Filed: November 5, 2021
    Publication date: May 19, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Hyun Jong LEE, Chong Hwan JONG, Ho Jin NAM, Choong hyun LEE, Eo jin KWON
  • Publication number: 20220127725
    Abstract: The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate.
    Type: Application
    Filed: August 20, 2021
    Publication date: April 28, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Dae Seong LEE, Hyeon Beom GWON, Kyung PARK
  • Patent number: 11292023
    Abstract: The present invention provides a substrate processing apparatus including: a process chamber having a process space in which a substrate is processed; a substrate support including a susceptor having a plurality of pocket grooves recessed in a circumferential direction from a top surface with a circular plate shape so that the substrate is seated, a shaft configured to rotate the susceptor, and a satellite seated in the pocket groove and on which the substrate is seated; and a gas injection unit disposed at an upper portion of the process chamber to face the substrate support, thereby injecting a process gas toward the substrate support.
    Type: Grant
    Filed: December 9, 2020
    Date of Patent: April 5, 2022
    Assignee: WONIK IPS CO., LTD.
    Inventors: Woo Young Park, Ja Hyun Koo, Chang Hee Han, Sung Eun Lee, Sung Ho Jeon, Byoung Guk Son, Sung Ho Roh, Yeong Taek Oh
  • Publication number: 20220064796
    Abstract: The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.
    Type: Application
    Filed: August 25, 2021
    Publication date: March 3, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Kyung PARK, Hyeon Beom GWON, Dae Seong LEE
  • Publication number: 20220059325
    Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.
    Type: Application
    Filed: July 2, 2021
    Publication date: February 24, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Kwang Seon JIN, Sang Jun PARK, Byung Chul CHO, Jun Hyuck KWON, Jong Ki AN, Tian Hao HAN
  • Publication number: 20220028687
    Abstract: Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.
    Type: Application
    Filed: June 28, 2021
    Publication date: January 27, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Su In KIM, Young Chul CHOI, Chang Hak SHIN, Min Woo PARK, Ji Hyun KIM, Kyung Mi KIM
  • Publication number: 20210398802
    Abstract: The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S10) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate (100) to form a first amorphous silicon layer (310b), and a second step (S20) of providing a first gas containing silicon on the substrate (100) having the first amorphous silicon layer (310b) formed thereon to form a second amorphous silicon layer (300a).
    Type: Application
    Filed: June 17, 2021
    Publication date: December 23, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Jae Jung Moon, Young Chul Choi, Dong Hak Kim
  • Publication number: 20210317574
    Abstract: The present invention relates to a substrate processing apparatus, and more particularly, the substrate processing apparatus includes a gas utility exhausting each of the reaction space and the protective space so that a pressure change process including a high-pressure process, which is in a state of a pressure higher than atmospheric pressure, and a low-pressure process that is in a state of a pressure lower than the atmospheric pressure, is performed on a plurality of substrates introduced into the reaction space.
    Type: Application
    Filed: September 9, 2020
    Publication date: October 14, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Seung Seob LEE, Jeong Lim SON, Joo Ho KIM, Kyung PARK, Joo Suop KIM, Young Jun KIM, Byung Jo KIM
  • Publication number: 20210317575
    Abstract: The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The substrate processing apparatus includes an outer tube which defines a protective space therein and has a lower portion in which a first inlet is provided and an inner tube which defines a reaction space therein and has a lower portion in which a second inlet is provided, wherein a portion of the inner tube is accommodated in the outer tube, and the portion, in which the second inlet is provided, protrudes downward from the outer tube.
    Type: Application
    Filed: September 9, 2020
    Publication date: October 14, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Seung Seob LEE, Jeong Lim SON, Joo Ho KIM, Kyung PARK, Joo Suop KIM
  • Publication number: 20210305075
    Abstract: The present invention disclosed herein relates to a transfer robot and a substrate processing apparatus having the same, and more particularly, to a transfer robot for transferring a substrate through a transfer module and a substrate processing apparatus having the same.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 30, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Kyung Hee JEON, Dong Sun KO, Hun Hee NA
  • Publication number: 20210193472
    Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 24, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Kwang Seon JIN, Jin Sung CHUN, Sang Jun PARK, Byung Chul CHO, Jun Hyuck KWON
  • Publication number: 20210193473
    Abstract: The present invention relates to an atomic layer etching method for etching a surface of a substrate by using an atomic layer etching apparatus.
    Type: Application
    Filed: December 17, 2020
    Publication date: June 24, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Jun Hyuck KWON, Jin Sung CHUN, Sang Jun PARK, Byung Chul CHO, Kwang Seon JIN
  • Publication number: 20210170436
    Abstract: The present invention provides a substrate processing apparatus including: a process chamber having a process space in which a substrate is processed; a substrate support including a susceptor having a plurality of pocket grooves recessed in a circumferential direction from a top surface with a circular plate shape so that the substrate is seated, a shaft configured to rotate the susceptor, and a satellite seated in the pocket groove and on which the substrate is seated; and a gas injection unit disposed at an upper portion of the process chamber to face the substrate support, thereby injecting a process gas toward the substrate support.
    Type: Application
    Filed: December 9, 2020
    Publication date: June 10, 2021
    Applicant: WONIK IPS CO., LTD.
    Inventors: Woo Young PARK, Ja Hyun KOO, Chang Hee HAN, Sung Eun LEE, Sung Ho JEON, Byoung Guk SON, Sung Ho ROH, Yeong Taek OH