Abstract: A heater for an ingot growing apparatus is provided. The heater, disposed outside a crucible so as to heat the crucible, for an ingot growing apparatus comprises: a body part including a flow path through which a heat source, for generating heat for heating the crucible, flows; and a heat increasing part formed by being inwardly cut at a predetermined depth along a circumferential direction at an upper side of the body part, wherein a portion of the body part, at which the heat increasing part is formed, has a thickness (d3) formed to be less than a thickness (d2) of the other portion of the body part such that the heat can be intensively generated at the heat increasing part.

Abstract: Provided is an apparatus and method of correcting a magnetic field of a high-temperature chamber. The apparatus includes a high-temperature magnetic field sensor unit for being inserted into a high-temperature chamber in a high-temperature environment and detecting a magnetic field generated by a magnet heater, a magnetic field comparing unit for comparing a result of detection of the high-temperature magnetic field sensor unit with a target magnetic field and obtaining a difference between the detected magnetic field and the target magnetic field, and a current parameter controller for correcting current parameters according to a result of comparison of the magnetic field comparing unit and controlling the magnet heater.

Abstract: The present invention relates to an ingot growing device for growing a single crystal silicon ingot. According to one embodiment of the present invention, the ingot growing device comprises: a growing chamber having an inner space; a growing container located in the inner space and having a silicon solution accommodated therein; a heating unit encompassing the growing container and located thereat, and generating heat; and a susceptor for supporting the growing container, wherein the heating unit comprises: a first ring heater having a ring shape; a second ring heater having a ring shape and located at the lower part of the first ring heater; a first coupling part for coupling the first ring heater and the second ring heater; and a first ring support unit located between the first ring heater and the second ring heater and supporting the first ring heater.

Abstract: The present invention relates to an ingot growing device for growing a single crystal silicon ingot. According to one embodiment of the present invention, the ingot growing device comprises: a growing chamber having an inner space; a growing container located in the inner space and having a silicon solution accommodated therein; a heating unit encompassing the growing container and located thereat, and generating heat; and a susceptor for supporting the growing container, wherein the heating unit comprises: a first ring heater having a ring shape; a second ring heater having a ring shape and located at the lower part of the first ring heater; a first coupling part for coupling the first ring heater and the second ring heater; and a first ring support unit located between the first ring heater and the second ring heater and supporting the first ring heater.