Abstract: The present disclosure discloses a bipolar transistor type MEMS pressure sensor and a preparation method thereof. The bipolar transistor type MEMS pressure sensor includes a thin film, a cantilever beam and a bipolar transistor. The bipolar transistor includes a base region, a collector region and an emitter region. The base region is configured to sense deformation of the thin film through a change in resistance value. For the bipolar transistor type MEMS pressure sensor of the disclosure, sensitivity of the sensor can be effectively improved without changing the performance indicators such as the measurement range and nonlinearity. Meanwhile, the bipolar transistor is used as a pressure-sensitive element, so that temperature drift of the sensor can be effectively inhibited.

Abstract: The present application discloses a packaging structure and method of an MEMS pressure sensor. The packaging structure of the MEMS pressure sensor includes: a film, forming a sealing chamber with a base, during manufacturing the sealing chamber is internally equipped with a sensing medium and a pressure sensor chip, when the external pressure increases, the film bends towards an inner side of the sealing chamber to cause the sealing chamber to contract and transmit pressure to the pressure sensor chip through the sensing medium. The packaging structure of the present application can avoid the sensing chip from being damaged by excessive contraction of the sealing chamber due to pressure overload, and thus achieves overload protection.