Patents Assigned to X-FAB Sarawak Sdn. Bhd.
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Patent number: 11929296Abstract: A method of forming a semiconductor device, the method including the steps of providing a metal component having a top surface, and providing a passivation layer over the metal component such that an outer layer of the passivation layer is substantially planar and does not extend below the top surface of the metal component.Type: GrantFiled: July 5, 2022Date of Patent: March 12, 2024Assignee: X-FAB SARAWAK SDN. BHD.Inventors: Raj Sekar Sethu, Peng Yang, Kumar Sambhawam
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Publication number: 20220336308Abstract: A method of forming a semiconductor device, the method including the steps of providing a metal component having a top surface, and providing a passivation layer over the metal component such that an outer layer of the passivation layer is substantially planar and does not extend below the top surface of the metal component.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Applicant: X-FAB Sarawak Sdn. Bhd.Inventors: Raj Sekar SETHU, Peng YANG, Kumar SAMBHAWAM
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Patent number: 11469151Abstract: A semiconductor device includes a metal component covered by a passivation layer, wherein the metal component has a top surface and the passivation layer includes an outer layer which is substantially planar. The outer layer of the passivation layer does not extend below the top surface of the metal component.Type: GrantFiled: September 30, 2019Date of Patent: October 11, 2022Assignee: X-FAB SARAWAK SDN. BHD.Inventors: Raj Sekar Sethu, Peng Yang, Kumar Sambhawam
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Patent number: 11335791Abstract: A method of fabricating a semiconductor device, including performing the following steps in the following sequence: providing a substrate including first and second gate regions separated by a trench formed in the substrate and growing a thin oxide layer on each of the first and second gate regions. The method further includes removing the thin oxide layer from the second gate region, and growing a thick oxide layer on the second gate region.Type: GrantFiled: May 21, 2019Date of Patent: May 17, 2022Assignee: X-FAB SARAWAK SDN. BHD.Inventors: Jerry Liew, Jee Chang Lai
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Patent number: 10892182Abstract: A method of fabricating a semiconductor device with Shallow Trench Isolation (STI) includes performing the following steps in the following sequence: providing a substrate comprising first and second gate regions separated by a trench formed in the substrate, wherein the trench is filled with an STI material. The method further includes depositing a sacrificial polysilicon layer covering the STI material; growing a thick oxide layer on the first and second gate regions; removing the thick oxide layer from the first gate region while leaving the thick oxide layer in the second gate region.Type: GrantFiled: May 21, 2019Date of Patent: January 12, 2021Assignee: X-FAB SARAWAK SDN. BHD.Inventors: Foo Sen Liew, Jee Chang Lai
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Publication number: 20200111718Abstract: A semiconductor device includes a metal component covered by a passivation layer, wherein the metal component has a top surface and the passivation layer includes an outer layer which is substantially planar. The outer layer of the passivation layer does not extend below the top surface of the metal component.Type: ApplicationFiled: September 30, 2019Publication date: April 9, 2020Applicant: X-FAB Sarawak Sdn. Bhd.Inventors: Raj Sekar SETHU, Peng YANG, Kumar SAMBHAWAM
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Publication number: 20190355614Abstract: A method of fabricating a semiconductor device with Shallow Trench Isolation (STI) includes performing the following steps in the following sequence: providing a substrate comprising first and second gate regions separated by a trench formed in the substrate, wherein the trench is filled with an STI material. The method further includes depositing a sacrificial polysilicon layer covering the STI material; growing a thick oxide layer on the first and second gate regions; removing the thick oxide layer from the first gate region while leaving the thick oxide layer in the second gate region.Type: ApplicationFiled: May 21, 2019Publication date: November 21, 2019Applicant: X-FAB Sarawak Sdn. Bhd.Inventors: Foo Sen LIEW, Jee Chang LAI
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Publication number: 20190355837Abstract: A method of fabricating a semiconductor device, including performing the following steps in the following sequence: providing a substrate including first and second gate regions separated by a trench formed in the substrate and growing a thin oxide layer on each of the first and second gate regions. The method further includes removing the thin oxide layer from the second gate region, and growing a thick oxide layer on the second gate region.Type: ApplicationFiled: May 21, 2019Publication date: November 21, 2019Applicant: X-FAB Sarawak Sdn. Bhd.Inventors: Jerry LIEW, Jee Chang LAI