Abstract: The present application provides a data backup method and a restoration method for an NVDIMM, an NVDIMM controller and an NVDIMM. The NVDIMM (200) comprises a DRAM (201), a NAND flash memory (202) and an NVDIMM controller (100), the NVDIMM controller (100) controlling the NVDIMM (200) and comprising a DDR controller (101), a NAND flash memory controller (102), a data backup module (103) and a data restoration module (104), the DDR controller (101) using and enabling DBI mechanism. During data backup, the DDR controller (101) reads N-bit DQi and 1-bit DBI from the DRAM (201) and sends the same to the data backup module (103). When DBIi is “1”, the data backup module (103) compares the DQi and DQi-1. If the number of bits of the DQi and the DQi-1 with different values is greater than N/2, then the DQi is inverted and the DBIi is set to “0”, and otherwise the DQi and the DBIi are remained unchanged. When the DBIi is “0”, the DQi and the DBIi are remained unchanged.

Abstract: The NVDIMM (200) comprises a DRAM (201), a NAND flash memory (202) and a NVDIMM controller (100), the NVDIMM controller (100) controlling the NVDIMM (200) and comprising a DDR controller (101), a NAND flash memory controller (102), a data backup module (103) and a data recovery module (104), and the DDR controller (101) using and enabling DBI. The backup method comprises: reading, by the DDR controller (101), N-bit DQ and 1-bit DBI from the DRAM (201) and sending the same to the data backup module; encoding, by the data backup module (103), the N-bit DQ and the 1-bit DBI into N-bit EDQ according to the values of the N-bit DQ and the 1-bit DBI, and sending the N-bit EDQ to the NAND flash memory controller; and receiving, by the NAND flash memory controller (102), the N-bit EDQ and writing the N-bit EDQ into the NAND flash memory (202).

Abstract: A method of correcting an error in a memory array in a DRAM during a read operation, wherein the memory array includes a data array and an ECC array, the method comprising: reading data from the memory array; when the data contains one or more erroneous data bits, correcting the erroneous data bits by an ECC decoding and correcting module in the DRAM; registering only corrected erroneous data bits and their positions in a register; controlling a plurality of write drivers in the DRAM by the register so as to write only the corrected erroneous data bits back to the memory array.

Abstract: The present invention relates to a memory with error correction function, comprising a data array, an ECC array, a flag bit array, an ECC encoding module, an ECC decoding module, a flag bit generation module and a flag bit detection module; wherein: the flag bit generation module is configured, when data is being written, to generate a flag bit and an encode enable signal, the flag bit being stored in the flag bit array, and the encode enable signal being used to control the operation of the ECC encoding module; the ECC encoding module is configured to encode the data to be written according to the ECC algorithm preset therein so as to generate parity bits; the ECC array is configured to store the generated parity bits; the flag bit detection module is configured, when data is being read, to detect the flag bit and control the operation of the ECC decoding module; and the ECC decoding module is configured to detect and correct erroneous data using the parity bits from the ECC array and the data from the data

Abstract: The present invention relates to a memory with error correction function, comprising a data array, an ECC array, an ECC encoding module, an ECC decoding module, a first data selection module, a second data selection module and a data output module; wherein when data is being written, the first data selection module receives the data to be written, and determines whether to receive the data from the data array in response to a control signal that affects the length of the data; when data is being read, the second data selection module controls the length of the data output from the data output module in response to the control signal that affects the length of the data. The invention further relates to a method of correcting errors in a memory.

Abstract: A method of ECC encoding a DRAM and a DRAM thereof. The method comprises determining whether to encode the data according to the value of a flag bit while the DRAM is being refreshed. The ECC encoding module encodes data only if of the flag bit setting and detecting module generates an enable signal. As a result, the length of the valid data for ECC encoding can be guaranteed to comply with the requirements of ECC encoding.

Abstract: A storage array programming method and device for a resistive random access memory (RAM) are proposed. The resistive RAM comprising a storage array, the storage array comprising a group of storage units to which data is to be written. The programming method comprises: reading the currently stored data in the group of storage units and comparing bit by bit the currently stored data with the data to be written to determine whether the currently stored data is consistent with the data to be written, and generating a data write state according to the determination result; determining the data write state, and by a set operation or a reset operation, writing the data to be written only to the storage units where the currently stored data is inconsistent with the data to be written; checking whether any storage unit having a write failure exists during the set operation or the reset operation; if so, then repeating the previous steps until the writing is completed.

Abstract: An RRAM storage subarray structure, and reading and writing methods therefore. The RRAM subarray structure comprises a main array and a reference array. Any one column in the reference array comprises a first bit line, a second bit line and a source line, and comprises n/2 memory cells connected in parallel between the first bit line and the source line and n/2 memory cells connected in parallel between the second bit line and the source line, wherein k columns of memory cells in the reference array share the source line, and any one column in the reference array can be used as a reference cell. By providing an adaptive read reference current, the RRAM subarray structure increases the read margin and improves the read speed and success rate.

Abstract: The present invention provides a high-frequency delay-locked loop and a clock processing method for the high-frequency delay-locked loop. The high-frequency delay-locked loop comprises a DLL circuit and a DCC circuit that are sequentially connected in series, and a pulse generating circuit used for generating a clock having a fixed pulse width. The fixed pulse width is a high-level width of the clock having the fixed pulse width and not smaller than a minimum pulse width required by the DLL circuit. The fixed pulse width enables a low-level width of the clock having the fixed pulse width to be not smaller than the minimum pulse width required by the DLL circuit. The clock having the fixed pulse width is input into the DLL circuit.

Abstract: A computer memory access method includes: receiving external data with a prefetching length, the external data having an unmasked first data portion and a masked second data portion; writing the unmasked first data portion to a corresponding data storage unit of a computer memory by a writing unit and reading a third data portion corresponding to the masked second data portion from the data storage unit by a reading unit; producing modified external data by merging the unmasked first data portion and the third data portion in place of the masked second data portion; generating parity bits from the modified external data by an error correction code encoding circuit according to a given rule; and then writing the parity bits to a parity bit storage unit of the computer memory by the writing unit, in substitution of previous information in the parity bit storage unit.

Abstract: A computer memory access method includes: receiving external data with a prefetching length; determining that the external data includes a masked data portion; at the time of a write enable signal being triggered, writing an unmasked data portion of the external data into a data storage unit of a computer memory by a writing unit; triggering a read enable signal at the time of the write enable signal being triggered and reading the unmasked data portion from the data storage unit by a reading unit while reading a third data portion corresponding to the masked data portion from the data storage unit; merging the unmasked data portion and the third data portion to a merged data and generating parity bits from the merged data by an error correction code encoding circuit; and writing the parity bits into a parity bit storage unit of the computer memory.

Abstract: Methods, systems and apparatus for storing data by an ECC memory are provided. In one aspect, when an ECC memory configured to be used for data blocks with a first data length is used for data blocks with a reduced second data length, a method includes storing at least one data block with the second data length in a data bit storage part of a storage array and storing parity bits generated for only one data block of the at least one data block according to a relevant encoding rule in a parity bit storage part of the storage array. When the at least one data block is two or more data blocks, one or more judgment bits, which indicate that the stored parity bits correspond to the only one data block, are stored in one or more storage bits of the parity bit storage part that are not occupied.