Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Abstract: A chip package included a chip, a first though hole, a laser stop structure, a first isolation layer, a second though hole and a conductive layer. The first though hole is extended from the second surface to the first surface of the chip to expose a conductive pad, and the laser stop structure is disposed on the conductive pad exposed by the first through hole, which an upper surface of the laser stop structure is above the second surface. The first isolation layer covers the second surface and the laser stop structure, and the first isolation layer has a third surface opposite to the second surface. The second though hole is extended from the third surface to the second surface to expose the laser stop structure, and a conductive layer is on the third surface and extended into the second though hole to contact the laser stop structure.

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle.

Abstract: A stacked chip package is provided. The stacked chip package includes a first substrate having a first side and a second side opposite thereto. The first substrate includes a recess therein. The recess adjoins a side edge of the first substrate. A plurality of redistribution layers is disposed on the first substrate and extends onto the bottom of the recess. A second substrate is disposed on the first side of the first substrate. A plurality of bonding wires is correspondingly disposed on the redistribution layers in the recess, and extends onto the second substrate. A device substrate is disposed on the second side of the first substrate. A method of forming the stacked chip package is also provided.

Abstract: A chip package including a semiconductor substrate is provided. A recess is in the semiconductor substrate, wherein the semiconductor substrate has at least one spacer protruding from the bottom of the recess. A conducting layer is disposed on the semiconductor substrate and extends into the recess. A method for forming the chip package is also provided.

Abstract: A chip package is provided. The chip package includes a substrate having a first surface and a second surface opposite thereto. A dielectric layer is disposed on the first surface of the substrate and includes a conducting pad structure. A first opening penetrates the substrate and exposes a surface of the conducting pad structure. A second opening is communication with the first opening and penetrates the conducting pad structure. A redistribution layer is conformally disposed on a sidewall of the first opening and the surface of the conducting pad structure and is filled into the second opening. A method for forming the chip package is also provided.

Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

Abstract: A method for forming a chip package is provided. The method includes providing a substrate and a capping layer, wherein the substrate has a sensing device therein adjacent to a surface of the substrate. The capping layer is attached to the surface of the substrate by an adhesive layer, wherein the adhesive layer covers the sensing device. A dicing process is performed on the substrate, the adhesive layer, and the capping layer along a direction to form individual chip packages.

Abstract: A chip package including a semiconductor substrate is provided. A recess is in the semiconductor substrate and adjoins a side edge of the semiconductor substrate, wherein the semiconductor substrate has at least one spacer protruding from the bottom of the recess. A conducting layer is disposed on the semiconductor substrate and extends into the recess.

Abstract: A semiconductor package includes a substrate, at least one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The light sensor or the thermal sensor is disposed on the first surface. The second surface has an opening to expose the light sensor (or the thermal sensor). The support is disposed on the first surface. The cover is disposed on the support, such that the cover is above the light sensor (or the thermal sensor) to form a first space between the cover and the light sensor (or the thermal sensor). The plate is placed on the second surface to cover the opening, such that a second space is formed between the plate and the light sensor (or the thermal sensor).

Abstract: An embodiment of the invention provides a chip package which includes: a first substrate; a second substrate disposed thereon, wherein the second substrate includes a lower semiconductor layer, an upper semiconductor layer, and an insulating layer therebetween, and a portion of the lower semiconductor layer electrically contacts with at least one pad on the first substrate; a conducting layer disposed on the upper semiconductor layer of the second substrate and electrically connected to the portion of the lower semiconductor layer electrically contacting with the at least one pad; an opening extending from the upper semiconductor layer towards the lower semiconductor layer and extending into the lower semiconductor layer; and a protection layer disposed on the upper semiconductor layer and the conducting layer, wherein the protection layer extends onto a portion of a sidewall of the opening, and does not cover the lower semiconductor layer in the opening.

Abstract: According to an embodiment of the invention, a chip package is provided, which includes: a substrate having an upper surface and a lower surface; a hole extending from the upper surface toward the lower surface; an insulating layer located overlying a sidewall of the hole; and a material layer located overlying the sidewall of the hole, wherein the material layer is separated from the upper surface of the substrate by a distance and a thickness of the material layer decreases along a direction toward the lower surface.

Abstract: A chip package includes a chip, an isolation layer, and a redistribution layer. The chip has a substrate, an electrical pad, and a protection layer. The substrate has a first surface and a second surface. The substrate has a through hole, and protection layer has a concave hole, such that the electrical pad is exposed through the concave hole and the through hole. The isolation layer is located on the second surface, the sidewall of the through hole, and the sidewall of the concave hole. The redistribution layer includes a connection portion and a passive element portion. The connection portion is located on isolation layer and in electrical contact with the electrical pad. The passive element portion is located on isolation layer that is on second surface, and an end of passive element portion is connected to connection portion that is on the second surface.

Abstract: A chip package includes a chip, a laser stopper, an isolation layer, a redistribution layer, an insulating layer, and a conductive structure. The chip has a conductive pad, a first surface, and a second surface opposite to the first surface. The conductive pad is located on the first surface. The second surface has a first though hole to expose the conductive pad. The laser stopper is located on the conductive pad. The isolation layer is located on the second surface and in the first though hole. The isolation layer has a third surface opposite to the second surface. The isolation layer and the conductive pad have a second though hole together, such that the laser stopper is exposed through the second though hole. The redistribution layer is located on the third surface, the sidewall of the second though hole, and the laser stopper.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A patterned photoresist layer is formed on a wafer of the wafer structure. The wafer is etched, such that channels are formed in the wafer, and a protection layer of the wafer structure is exposed through the channels. The protection layer is etched, such that openings aligned with the channels are formed in the protection layer. Landing pads in the protection layer are respectively exposed through the openings and the channels, and the caliber of each of the openings is gradually increased toward the corresponding channel. Side surfaces of the wafer surrounding the channels are etched, such that the channels are expanded to respectively form hollow regions. The caliber of the hollow region is gradually decreased toward the opening, and the caliber of the opening is smaller than that of the hollow region.

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate; a device region formed in the semiconductor substrate; at least a conducting pad disposed over a surface of the semiconductor substrate; a protection plate disposed over the surface of the semiconductor substrate; and a spacer layer disposed between the surface of the semiconductor substrate and the protection plate, wherein the protection plate and the spacer layer surround a cavity over the device region, the spacer layer has an outer side surface away from the cavity, and the outer side surface of the spacer layer is not a cutting surface.

Abstract: A chip package including a chip is provided. The chip includes a sensing region or device region adjacent to an upper surface of the chip. A sensing array is located in the sensing region or device region and includes a plurality of sensing units. A plurality of first openings is located in the chip and correspondingly exposes the sensing units. A plurality of conductive extending portions is disposed in the first openings and is electrically connected to the sensing units, wherein the conductive extending portions extend from the first openings onto the upper surface of the chip. A method for forming the chip package is also provided.

Abstract: A chip package is provided. The chip package includes a chip having an upper surface, a lower surface and a sidewall. The chip includes a sensing region or device region and a signal pad region adjacent to the upper surface. A shallow recess structure is located outside of the signal pad region and extends from the upper surface toward the lower surface along the sidewall. The shallow recess structure has at least a first recess and a second recess under the first recess. A redistribution layer is electrically connected to the signal pad region and extends into the shallow recess structure. A first end of a wire is located in the shallow recess structure and is electrically connected to the redistribution layer. A second end of the wire is used for external electrical connection. A method for forming the chip package is also provided.

Abstract: A wiring structure for improving a crown-like defect and a fabrication method thereof are provided. The method includes the following steps. A substrate, on which a seed layer and a patterned photoresist layer with an opening are formed, is provided. A copper layer, having a bottom covering the seed layer, is formed in the opening. A barrier layer covering at least one top portion of the copper layer is formed on the copper layer. An oxidation potential of the barrier layer is greater than that of the copper layer. The patterned photoresist layer is removed to perform an etching process, wherein the copper layer and a portion of the seed layer exposed are etched to form a wiring layer. An immersion process is performed to form an anti-oxidation layer comprehensively on exposed surfaces of the barrier layer and the wiring layer.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A temporary bonding layer is used to adhere a carrier to a first surface of a wafer. A second surface of the wafer is adhered to an ultraviolet tape on a frame, and the temporary bonding layer and the carrier are removed. A protection tape is adhered to the first surface of the wafer. An ultraviolet light is used to irradiate the ultraviolet tape. A dicing tape is adhered to the protection tape and the frame, and the ultraviolet tape is removed. A first cutter is used to dice the wafer from the second surface of the wafer, such that plural chips and plural gaps between the chips are formed. A second cutter with a width smaller than the width of the first cutter is used to cut the protection tape along the gaps.