Abstract: A method for nondestructive layer defect detection includes projecting radiation such as a laser beam on a surface of the layer. The surface of the layer is heated by the projected radiation so as to melt at least a portion of the layer. An impurity contained in a defect is heated by the projected radiation so as to increase the pressure of the material within the defect sufficiently to cause the impurity to emerge from the defect through the surface of the layer. The layer is then scanned for a visible defect created by the emergence of the impurity from the defect. A wafer scanning system for nondestructive layer defect detection includes a radiation source such as a laser and a wafer support system that supports a semiconductor wafer with a layer formed thereon in alignment with the radiation source.

Abstract: An improved excimer laser is disclosed. In one embodiment, the laser includes laser beam generating circuitry operable to generate a laser beam and a vessel enclosing the laser beam generating circuitry. The vessel contains a volume of gas conducive to the formation of the laser beam by the laser beam generating circuitry. The vessel has a wall with a beam aperture formed therein to permit the laser beam generated by the laser beam generating circuitry to pass through it. A window mount assembly is attached to the wall of the vessel. The window mount assembly encloses a beam cavity and has a window that transmits the laser beam. The window is positioned at a first, closed end of the beam cavity. The beam cavity has a second, open end adjoining the beam aperture formed in the vessel wall. The beam cavity has a lateral surface extending between the first and second ends. A plenum lies outside the beam cavity. A gas handling system extracts the gas from the vessel and provides the gas to the plenum.

Abstract: Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. The substrate, as well as any intervening dielectric and conducive layers, are preheated to preferably one-half the melting temperature of the metal to be planarized, thereby enhancing reflow of the metal upon melting. This improves planarization and reduces stress in the resolidified metal. Laser planarization offers an attractive technique for fabricating multilayer interconnect structures, particularly where a number of ground or power planes are included. Excellent step coverage and via filling is achieved without damaging lower layers of interconnect.

Abstract: An improved optical beam integration system for homogenizing a nonuniform radiant energy beam having a nonuniform beam intensity profile characteristic. The optical beam integration system comprises a first crossed lenticular cylindrical lens structure, a second crossed lenticular cylindrical lens structure, and a focusing lens interposed between a radiant energy source and an image or work plane. The nonuniform radiant energy beam from the radiant energy source refracts sequentially through the first and second crossed lenticular cylindrical lens structures and the focusing lens so as to produce a homogenized beam which forms an image in the work plane. The work plane is at a constant distance from the optical beam integration system. Preferably, the optical beam integration system is adjustable for selectively setting the size of the image produced by the homogenized beam in the work plane.