Patents Assigned to Yoshio Imai
  • Patent number: 4939214
    Abstract: A film comprised of at least one monomolecular layer composed essentially of a polyimide having repeating units of the formula: ##STR1## wherein R.sup.1 is a tetravalent organic group and R.sup.2 is a bivalent organic group.
    Type: Grant
    Filed: November 17, 1986
    Date of Patent: July 3, 1990
    Assignees: Mitsubishi Kasei Corporation, Yoshio Imai, Taro Hino
    Inventors: Yoshio Imai, Taro Hino, Mitsumasa Iwamoto, Masa-aki Kakimoto, Masa-aki Suzuki, Toru Konishi
  • Patent number: 4740263
    Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.
    Type: Grant
    Filed: April 17, 1985
    Date of Patent: April 26, 1988
    Assignee: Yoshio Imai
    Inventors: Yoshio Imai, Atsuhito Sawabe
  • Patent number: 4393434
    Abstract: A capacitance humidity sensor according to the disclosure a non-conductive base plate, electrodes oppositely arranged on the base plate, a metal compound membrane formed by ion-plating independently on the electrodes, the metal compound membrane being roughened on its surface by plasma etching and being active to the humidity, and a moisture permeable metal skin formed on the metal compound membrane. The metal compound is preferably an oxide or nitride of aluminum or magnesium.
    Type: Grant
    Filed: November 20, 1981
    Date of Patent: July 12, 1983
    Assignee: Yoshio Imai
    Inventors: Yoshio Imai, Yoichi Nabeta, Tadao Inuzuka