Abstract: A sputtering target having a unitary body. The unitary body includes a planar substrate plate and a toroidal portion extending from a top surface of the substrate plate. The toroidal portion reduces non-uniform erosion against the plate caused by a magnetic field applied to the target. In use, the magnetic field is initially received at the toroidal portion. After the magnetic field wears down the toroidal portion, the magnetic field is received at the substrate plate.

Abstract: A heterogeneous material (e.g., a metal-organic framework or “MOF”) is useful for removing heavy metals from a liquid (e.g., water). The heterogeneous material may incorporate a group 16-containing heterocycle supported on solid media. Thiophene-containing MOFs, such as ATF-1 and DUT-67, may be used to remove lead from water. It is postulated that the metal is adsorbed via non-covalent interactions. The systems and methods described herein may also be applicable to other heavy metals. Thus, the applications are not limited to drinking water purification. Instead, the systems and methods may be used for a broad variety of other applications, such as nuclear waste remediation.

Abstract: A heterogeneous material (e.g., a metal-organic framework or “MOF”) is useful for removing heavy metals from a liquid (e.g., water). The heterogeneous material may incorporate a group 16-containing heterocycle supported on solid media. Thiophene-containing MOFs, such as ATF-1 and DUT-67, may be used to remove lead from water. It is postulated that the metal is adsorbed via non-covalent interactions. The systems and methods described herein may also be applicable to other heavy metals. Thus, the applications are not limited to drinking water purification. Instead, the systems and methods may be used for a broad variety of other applications, such as nuclear waste remediation.

Abstract: A metal organic framework includes metal-containing secondary building units and perfluorinated linkers (e.g., pefluorinated arene linkers, perfluorinated heteroarene linkers, etc.). The metal may be copper, zinc, hafnium, zirconium, aluminum, gallium, or indium. A method for removing contaminants from wastewater may utilize the metal organic framework. The contaminants may include arenes.

Abstract: A metal organic framework includes metal-containing secondary building units and perfluorinated linkers (e.g., pefluorinated arene linkers, perfluorinated heteroarene linkers, etc.). The metal may be copper, zinc, hafnium, zirconium, aluminum, gallium, or indium. A method for removing contaminants from wastewater may utilize the metal organic framework. The contaminants may include arenes.

Abstract: A metal organic framework includes metal-containing secondary building units and perfluorinated linkers (e.g., pefluorinated arene linkers, perfluorinated heteroarene linkers, etc.). The metal may be copper, zinc, hafnium, zirconium, aluminum, gallium, or indium. A method for removing contaminants from wastewater may utilize the metal organic framework. The contaminants may include arenes.

Abstract: Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use of Schottky barrier diodes in high power and high temperature applications. In one embodiment, a refractory metal boride layer is joined to a surface of a silicon carbide semiconductor substrate. The refractory metal boride layer is deposited on the silicon carbon semiconductor substrate at a temperature greater than 200° C. In another embodiment, a Schottky barrier diode is fabricated via deposition of nickel gallide on a SiC substrate.

Abstract: The invention relates to an aerodynamic wind deflector for use with pitched panels or structures mounted on horizontal, flat surfaces. More particularly, the invention relates to a wind deflector, including a contoured surface, for deflecting aerodynamic forces away from a pitched structure, such as a solar panel, mounted to a horizontal, flat surface, such as a roof top, wherein the structure is subjected to such aerodynamic forces. The wind deflector may further include a customized fin or fins as part of the design.

Abstract: Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use of Schottky barrier diodes in high power and high temperature applications. In one embodiment, a refractory metal boride layer is joined to a surface of a silicon carbide semiconductor substrate. The refractory metal boride layer is deposited on the silicon carbon semiconductor substrate at a temperature greater than 200° C. In another embodiment, a Schottky barrier diode is fabricated via deposition of nickel gallide on a SiC substrate.

Abstract: Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use of Schottky barrier diodes in high power and high temperature applications. In one embodiment, a refractory metal boride layer is joined to a surface of a silicon carbide semiconductor substrate. The refractory metal boride layer is deposited on the silicon carbon semiconductor substrate at a temperature greater than 200° C. In another embodiment, a Schottky barrier diode is fabricated via deposition of nickel gallide on a SiC substrate.