Abstract: An overlay alignment mark located in a patterned wafer and a method for measuring overlay error are provided, the patterned wafer having a lower-layer pattern in a first layer thereof and an upper-layer pattern in a second layer thereof above the first layer, the overlay alignment mark comprising: a first pattern, which is a portion of the lower-layer pattern and comprises a pair of solid features formed in the first layer; and a second pattern, which is a portion of the upper-layer pattern and comprises two pairs of hollowed features formed in the second layer, with two imaginary lines connecting between geometric centers of respective pairs in the two pairs of hollowed features extending in two mutually orthogonal directions, respectively; an orthographic projection of the pair of solid features on the wafer at least partially overlaps with an orthographic projection of a respective pair of hollowed features on the wafer.

Abstract: A Wien filter and a charged particle beam imaging apparatus are provided.

Abstract: A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector.

Abstract: A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector.

Abstract: The invention provides a multi-pole deflector for a charged particle beam, and a charged particle beam imaging apparatus. The deflector includes a plurality of poles, including at least two pairs of poles, each pole in each pair of poles including a main body constructed in the form of a circular arc-shaped section and a protrusion projecting from an radial inner side of the main body.

Abstract: A Wien filter and a charged particle beam imaging apparatus are provided.

Abstract: An adjusting mechanism for adjusting a deformation of a panel and an electron beam detection apparatus comprising the same are disclosed, the adjusting mechanism including: a support plate, which is provided opposite to the panel, with a periphery of the support plate being in positive fit with a periphery of the panel; and at least one screw set, each screw set comprising: at least one first screw, each first screw penetrating through the support plate, and in turn being connected to the panel by being screwed into the panel; and at least one second screw, each second screw being screwed to penetrate through the support plate and to abut against the panel; the support has its structural rigidity larger than a structural rigidity of the panel.