Abstract: In one embodiment, the voltage rectifying device includes two input terminals for an AC voltage, rectifying means made using integrated technology within a semiconductor substrate, and two output terminals for a rectified voltage, one of these output terminals being taken out at substrate level. The rectifying means may include a pair of first insulated-gate field-effect transistors connected as diodes with one of their electrodes linked to the substrate, and a pair of second insulated-gate field-effect transistors arranged respectively in biased semiconductor wells with the gates linked and crossed over the two input terminals, the first and second transistors having channels of opposite types and a drain/source voltage when conducting which is below a predetermined voltage.