Patents Examined by Arden Sperty
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Patent number: 6641941Abstract: The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixture of powdery yttria and alumina materials is sprayed on a substrate to form a sprayed yttria-alumina complex oxide film. Preferably, the powdery yttria material has a 50 percent mean particle diameter in a range of 0.1 &mgr;m to 100 &mgr;m, and the powdery alumina material has a 50 percent mean particle diameter in a range of 0.1 &mgr;m to 100 &mgr;m. Preferably, the yttria-alumina complex oxide contains at least garnet phase, and may further contain perovskite phase.Type: GrantFiled: July 17, 2002Date of Patent: November 4, 2003Assignee: NGK Insulators, Ltd.Inventors: Hirotake Yamada, Tsuneaki Ohashi
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Patent number: 6627248Abstract: A dental restoration comprises a ceramic core material having a thin metallic layer disposed on the interior surface of the ceramic core to provide integrity to the ceramic core, eliminate bonding between the ceramic core and the patient's tooth or teeth, and provide an impervious layer on the ceramic interior to reduce infiltration of fluids into the ceramic and reduce cracking of the ceramic restoration. The metallic layer may comprise a metal, alloy or metal-matrix ceramic material. A strong, crack-resistant ceramic restoration is provided having highly aesthetic properties.Type: GrantFiled: November 10, 2000Date of Patent: September 30, 2003Assignee: Jeneric/Pentron IncorporatedInventor: Arun Prasad
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Patent number: 6623878Abstract: A sintered ferrite body is obtained by baking a raw ferrite material including about 0.1% to about 30% by weight of a glass having, as a single material, and having a specific resistance &rgr; (&OHgr;) of about 10 or more in the log &rgr; unit, and a softening point of about 400° C. to about 700° C., in order to overcome the problem that relatively low specific resistance of a ferrite material causes insulation deterioration as well as migration of an internal electrode in a laminated ferrite component when constructing the laminated ferrite component from a sintered ferrite body.Type: GrantFiled: October 4, 2000Date of Patent: September 23, 2003Assignee: Murata Manufacturing Co., Ltd.Inventor: Kazuhiko Takenaka
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Patent number: 6617044Abstract: A surface treating process according to the present invention, a vapor deposited film is formed from an easily oxidizable vapor-depositing material on the surface of a work by evaporating the vapor-depositing material in a state in which the vapor deposition controlling gas has been supplied to at least zones near a melting/evaporating source and the work within a treating chamber. Thus, the vapor deposited film can be formed stably on the surface of a desired work without requirement of a long time for providing a high degree of vacuum and without use of a special apparatus. In addition, the use of the surface treating process ensures that a corrosion resistance can be provided to a rare earth metal-based permanent magnet extremely liable to be oxidized, without degradation of a high magnetic characteristic of the magnet.Type: GrantFiled: March 12, 2002Date of Patent: September 9, 2003Assignee: Sumitomo Special Metals Co., Ltd.Inventors: Takeshi Nishiuchi, Yoshimi Tochishita, Fumiaki Kikui, Mitsuo Kizawa
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Patent number: 6602623Abstract: A low-temperature firing ceramic composition contains Sr2MgSi2O7 crystals forming a major crystal phase of the composition. This composition can be produced, for example, by a process including the steps of (a) mixing together a silica powder, a magnesia powder and a strontium oxide powder to obtain a powder mixture; (b) subjecting the powder mixture to a calcination at a temperature of 1,000-1,200° C. to obtain a calcination product containing Sr2MgSi2O7 crystals; (c) mixing the calcination product with alumina powder, boron oxide powder, lithium oxide powder, binder and ethanol to obtain a powder mixture; (d) granulating the powder mixture; (e) shaping the resulting granules into a green body; (f) compacting the green body by a hydrostatic pressing (CIP); and (g) firing the resulting compact in an atmosphere of air, thereby obtaining the composition.Type: GrantFiled: October 26, 2000Date of Patent: August 5, 2003Assignee: NGK Spark Plug Co., Ltd.Inventors: Hidetoshi Mizutani, Tsutomu Sakai, Masashi Suzumura, Satoshi Iio
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Patent number: 6599643Abstract: The disclosure relates to a process for forming a deposit on the surface of a metallic or conductive surface. The process employs an energy enhanced process to deposit a silicate containing coating or film upon a metallic or conductive surface.Type: GrantFiled: March 22, 2001Date of Patent: July 29, 2003Assignee: Elisha Holding LLCInventors: Robert L. Heimann, William M. Dalton, John Hahn, David M. Price, Wayne L. Soucie, Ravi Chandran
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Patent number: 6596353Abstract: An artificial palm tree having a base, a frame fixedly attached to and extending upwardly from the base, the frame having an upper end; a helically wound metal strap having a leaf scar indicating edge, a multiplicity of heat fusion welds interconnecting the frame mounting edge of the helically wound metal strap and the frame; twelve rachis indicating shafts; a concentrically mounted cylinder slip sleeve and slip pin joint interconnecting the proximal ends of the rachis indicating shafts with the upper end of the frame; and a multiplicity of pinna indicating plates fixedly attached to the rachis indicating shafts.Type: GrantFiled: June 12, 2002Date of Patent: July 22, 2003Inventor: Wendell G. Turner
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Patent number: 6586101Abstract: An anti-reflection coating layer system is composed of 4 oxide layers. The material of surface layer is a transparent conductive coating and has a high refractive index between 1.9 to 2.1. The materials used for the surface layer are a transparent conductive coating such as SnO2, ZnO2, In2O3, and ITO.Type: GrantFiled: April 18, 2001Date of Patent: July 1, 2003Assignee: Applied Vacuum Coating Technologies Co., Ltd.Inventor: Jau-Jier Chu
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Patent number: 6586113Abstract: Systems and methods of manufacturing etchable heterojunction interfaces and etched heterojunction structures are described. A bottom layer is deposited on a substrate, a transition etch layer is deposited over the bottom layer, and a top layer is deposited over the transition etch layer. The transition etch layer substantially prevents the bottom layer and the top layer from forming a material characterized by a composition substantially different than the bottom layer and a substantially non-selective etchability with respect to the bottom layer. By tailoring the structure of the heterojunction interface to respond to heterojunction etching processes with greater predictability and control, the transition etch layer enhances the robustness of previously unreliable heterojunction device manufacturing processes. The transition etch layer enables one or more vias to be etched down to the top surface of the bottom layer in a reliable and repeatable manner.Type: GrantFiled: July 19, 2000Date of Patent: July 1, 2003Assignee: Agilent Technologies, Inc.Inventors: Sandeep R. Bahl, Yu-Min Houng, Virginia M. Robbins, Fred Sugihwo
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Patent number: 6586095Abstract: Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.Type: GrantFiled: January 8, 2002Date of Patent: July 1, 2003Assignee: Georgia Tech Research Corp.Inventors: Zhong L. Wang, Zhengwei Pan, Zurong Dai
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Patent number: 6579578Abstract: A foldable ornament frame structure of the invention includes a first movable part, a second movable part, and a plurality of support rods. The first and second movable parts are respectively mounted at a top and a bottom of the ornament frame structure. The support rods connect the first movable part to the second movable part around the ornament frame to outline the ornamental shape of the ornament frame. The first and second movable parts respectively include a plurality of strips that are superposed and cross over one another at approximately respective central portions thereof. A hinge passes through the central portions to pivotally connect the strips together, the support rods connecting the strips of the first and second movable parts to outline the ornamental shape of the ornament frame.Type: GrantFiled: August 13, 2002Date of Patent: June 17, 2003Inventor: Chi Shih Lai
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Patent number: 6565997Abstract: A piezoelectric element includes a ceramic substrate, a piezoelectric ceramic composition composed mainly of a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition containing 0.05 to 10.0% by weight of NiO, based on the ceramic composition. Electrodes are electrically connected to the piezoelectric. The piezoelectric is solidly attached to the ceramic substrate directly or via part of or all of the electrodes. The piezoelectric ceramic composition is represented by the following general formula: Pbx(Mgy/3Nb2/3)aTibZrcO3, wherein 0.95≦x≦1.05; 0.8≦y≦1.0; a, b and c are decimals falling in a range surrounded by (a,b,c)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.425, 0.475), (0.100, 0.475, 0.425) and (0.375, 0.425, 0.200), and a+b+c=1.000.Type: GrantFiled: September 17, 2001Date of Patent: May 20, 2003Assignee: NGK Insulators, Ltd.Inventor: Toshikatsu Kashiwaya
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Patent number: 6558822Abstract: The invention aims to provide a hard film which is improved in high-temperature corrosion resistance without impairing high sliding characteristics (wear resistance, low frictional coefficient) inherent in a titanium nitride thin film and which is suitable for a slide member such as a bearing or a seal used in rotary machines operated at a high temperature, such as a steam turbine and a gas turbine. For attaining this aim, the invention provides a Cr-containing titanium nitride film which is composed of a nitride containing Ti and Cr as main components, the crystal particles thereof having a face-centered cubic crystal structure, and the crystal thereof being highly oriented toward (200) face.Type: GrantFiled: May 24, 2001Date of Patent: May 6, 2003Assignee: Ebara CorporationInventors: Hiroshi Nagasaka, Momoko Kakutani, Matsuho Miyasaka, Tadashi Kataoka
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Patent number: 6558821Abstract: In ceramic sinter consisting of at least one kind selected from a group consisting of silicon nitride, zirconia, silicon carbide, cermet, SIALON, aluminum nitride and alumina, wear resistant member and electronic component member using thereof, skewness at a contact surface of the ceramic sinter is set at −2 or more and 0 or less, a depth of a micro-crack is set at 5 &mgr;m or less, and in the depth of up to 500 &mgr;m from the surface an area that pores occupy does not exceed 5%. The ceramic sinter as described above can suppress wear of the opponent member. Further, in such ceramic sinter, bonding strength with an element or a metal plate can be heightened to enable to suppress peeling. The electronic components of high reliability can be fabricated accordingly. The present wear resistant member is suitable for sliding member that is used in portions where wear is particularly remarkable.Type: GrantFiled: March 17, 2000Date of Patent: May 6, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Katsuhiro Shinosawa, Hiroyasu Ohta, Mineyuki Yamaga
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Patent number: 6534183Abstract: The invention includes sintered products for transparent electroconductive films, which are formed into films in a stable and efficient manner through sputtering or the like, sputtering targets of the sintered products, and transparent electroconductive glass and films formed from the targets. The transparent electroconductive glass and films have good transparency, good electroconductivity and good workability into electrodes, and are therefore favorable to transparent electrodes in organic electroluminescent devices as realizing good hole injection efficiency therein. The sintered products contain constituent components of indium oxide, tin oxide and zinc oxide in specific atomic ratios of the metal atoms, and optionally contain specific metal oxides of ruthenium oxide, molybdenum oxide, vanadium oxide, etc.Type: GrantFiled: May 1, 2000Date of Patent: March 18, 2003Assignee: Idemitsu Kosan Co., Ltd.Inventor: Kazuyoshi Inoue
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Patent number: 6531235Abstract: A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. A non-c-axis-oriented, anisotropic perovskite ferroelectric layer is formed on the template layer.Type: GrantFiled: June 6, 2001Date of Patent: March 11, 2003Assignee: Max-Planck-Institute für MikrostrukturphysikInventors: Ho Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele