Abstract: A method and structure for a single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region, a support layer formed overlying the enhancement layer, and an air cavity formed through a portion of the support layer. A single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer.

Abstract: A SAW filter includes a substrate including a piezoelectric substrate, a transmission filter, and an additional resonator. The transmission filter is a ladder-type filter filtering signals from a transmission terminal and outputting the result to an antenna terminal. Further, the transmission filter includes one or more serial resonators and one or more parallel resonators which are connected in a ladder configuration on the piezoelectric substrate. An initial stage resonator is the serial resonator. The additional resonator includes an IDT electrode on the piezoelectric substrate. The IDT electrode is connected to the transmission terminal at a stage before the transmission filter and is connected to any of the one or more GND terminals. In the additional resonator, a resonance frequency and an antiresonance frequency are located outside of a passband of the transmission filter.

Abstract: A microelectromechanical system with at least one partly mobile mass element which is suspended from a fixed support by one or more suspension units. Each suspension unit comprises first springs which extend from the fixed support to the partly mobile mass element, and second springs which also extend from the fixed support to the partly mobile mass element. Each second spring is substantially parallel and adjacent to one first spring. The first springs are electrically isolated from the second springs, and the microelectromechanical system comprises a voltage source configured to apply a frequency tuning voltage between the one or more first springs and the one or more second springs.

Abstract: Antenna assemblies for vehicles, such as RADAR sensor antenna assemblies. In some embodiments, the assembly may comprise an antenna block defining a waveguide groove and an adapter portion comprising a ridge. The ridge may taper or otherwise transition in height and/or width to facilitate a transition between two adjacent elements of the assembly, such as two adjacent waveguide structures comprising ridges having different cross-sectional dimensions.

Abstract: A duplexer includes a duplexer package having a transmit terminal, an antenna terminal, a receive terminal and at least one package ground terminal, a transmit filter disposed within the duplexer package, and a receive filter disposed within the duplexer package. Coupled first and second inductors, the first inductor connected to the transmit filter and the second inductor connected to the receive filter, are configured to cancel, at least in part, RF signal leakage between the transmit filter and the receive filter.

Abstract: A multiplexer includes a filter (10) arranged between a common terminal and an input/output terminal (110) and configured to pass a radio frequency signal in a first frequency band, and a filter (20) arranged between the common terminal and an input/output terminal (120) and configured to pass a radio frequency signal in a second frequency band. The filter includes series arm circuits (31 and 32) connected in series, a series arm circuit (33) connected in parallel to the series arm circuit (32), and a parallel arm circuit. The series arm circuit (32) includes a series arm resonator that is an acoustic wave resonator. The series arm circuit (33) includes a switch arranged on a second path connecting nodes. In a CA mode, the switch is OFF. In a non-CA mode, the switch is ON.

Abstract: A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

Abstract: Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer is formed on the front surface of the piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. At least a portion of a perimeter of the cavity is curved, and the perimeter of the cavity is corner-less.

Abstract: Filter devices and methods are disclosed. A filter device includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on a front surface of the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a plurality of resonators. Interleaved fingers of at least a first IDT of the plurality of IDTs are disposed on a diaphragm having a first thickness, and interleaved fingers of at least a second IDT of the plurality of IDTs are disposed on a diaphragm having a second thickness less than the first thickness.

Abstract: A reflective microstrip tuning circuit that operatively couples to another circuit to be tuned, in which tuning circuit receives an incident signal from the other circuit and enables adjustment of the amplitude and/or phase of the return signal reflected by the tuning circuit for use in the other circuit. The tuning circuit includes one or more cascaded couplers that divide power from the incident signal unequally among a plurality of adjustable tuning arms, in which the tuning arms may be individually adjusted to change the phase of the signal that is reflected by each arm so that both the amplitude and phase of the signal returned by the tuning circuit is adjusted to achieve the desired tuning result. The difference in the power that is divided among the tuning arms provides a progressive weighting to the adjustment effect of each tuning arm, which provides for a series of coarse through fine adjustments that enables a greater degree of resolution when tuning.

Abstract: Aspects of this disclosure relate to acoustic wave filters that include a Lamb wave resonator and a second acoustic wave resonator that is a different type of acoustic wave resonator than the Lamb wave resonator. The different type of resonator can be a film bulk acoustic wave resonator for example. Some embodiments of this disclosure relate to an acoustic wave filter that includes the Lamb wave resonator and the second acoustic wave resonator. Some embodiments of this disclosure related to different respective acoustic wave filters including the Lamb wave resonator and the second acoustic wave resonator, in which the Lamb wave resonator and the second acoustic wave resonator are implemented on a common substrate.

Abstract: Systems and methods are provided for use of common mode rejection (CMR) for echo cancellation in uplink communications. A node in a cable network configured for transmitting downstream (DS) signals and receiving upstream (US) signals, may include echo cancelling circuits configured for cancelling echo introduced by the DS signals and/or transmittal of the DS signals, onto US signals and/or US reception path, to facilitate full-duplex (FDX) communications of the DS signals and US signal. The echo cancelling circuits may be configured for operating in the analog domain. The echo cancelling circuits may include an echo cancelling combiner configured for combining two or more upstream signals non-coherently.

Abstract: Various arrangements for electrically coupling the electrodes of coupled resonator structures (CRSes) to form unique two- and three-terminal devices as well as the use of such CRSes in filter networks are disclosed.

Abstract: A zero-output coupled resonator filter (ZO-CRF) and related radio frequency (RF) filter circuit are provided. In examples discussed herein, the ZO-CRF can be configured to function as a shunt resonator(s) in an RF filter circuit (e.g., a ladder filter circuit). The ZO-CRF includes a first resonator and a second resonator that are coupled to each other via a coupling layer. The first resonator and the second resonator receive a first voltage and a second voltage, respectively. The first voltage and the second voltage can be configured in a number of ways to cause the ZO-CRF to resonate at different resonance frequencies. As such, it may be possible to modify resonance frequency of the ZO-CRF in an RF filter circuit based on signal connection. As a result, it may be possible to reduce total inductance of the RF filter circuit, thus helping to reduce footprint of the RF filter circuit.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a bulk acoustic wave resonator and a Lamb wave element implemented on a common substrate. In some instances, the bulk acoustic wave resonator can be a film bulk acoustic wave resonator. Related radio frequency modules and wireless communication devices are disclosed.

Abstract: A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.

Abstract: An acoustic resonator is disclosed. The acoustic resonator comprises a substrate, a first electrode, a second electrode and a piezoelectric layer positioned between the first electrode and the second electrode. An acoustic reflector is positioned between the first electrode and the substrate. An active area comprises a region of contacting overlap of the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode. A gap region extends around the active area.

Abstract: A duplexer includes a surface acoustic wave (SAW) device comprising a transmit filter and a receive filter formed on a piezoelectric substrate. The transmit filter includes a first transmit shunt resonator connected to a first transmit-filter ground terminal. The receive filter includes a first receive shunt resonator connected to a first receive-filter ground terminal. A ground coupling capacitor is connected between the first transmit-filter ground terminal and the first receive-filter ground terminal.

Abstract: Aspects of this disclosure relate to a surface acoustic wave filter with an integrated temperature sensor. The integrated temperature sensor can be a resistive thermal device configured as a reflective grating for a surface acoustic wave resonator, for example. A radio frequency system can provide over temperature protection by reducing a power level of a radio frequency signal provided to the surface acoustic wave filter responsive to an indication of temperature provided by the integrated temperature sensor satisfying a threshold.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.