Patents Examined by Bernard D. Pianalto
  • Patent number: 4781950
    Abstract: Method for impregnating mineral building materials, with aqueous solutions of silanols and/or siloxanols is disclosed. The solution is obtained by continuous hydrolysis of alkoxysilanes and/or alkoxysiloxanes, of the general formula ##EQU1## wherein R.sup.1 =alkyl with 1 to 8 carbon atoms, at least 90% of the R.sup.1 groups in the average molecule being alkyl groups with 1 to 4 carbon atoms,R.sup.2 =methyl or ethyl,a=0 to 1.5,b=1.0 to 4.0,a+b=2.0 to 4.0in an amount corresponding to the expected consumption. The solution obtained is applied on the mineral building material within 3 to 30 minutes after the reactants are mixed. Suitable hydrolysis apparatus is also disclosed.
    Type: Grant
    Filed: July 30, 1987
    Date of Patent: November 1, 1988
    Assignee: Th. Goldschmidt AG
    Inventors: Herbert Giesing, Gotz Koerner, Eckehard Schamberg, Jakob Wassermeyer, Christian Weitemeyer
  • Patent number: 4780176
    Abstract: A method of wetting and coating various metals, which have been mechanically polished and chemically cleaned and etched, includes plasma cleaning and etching the metal and delivering mercury or other liquid metals through the plasma to the surface of the metal to be wetted. Tungsten, molybdenum, steels and elkonite are among the metals which may be wetted with a liquid metal according to the method of this invention. Molybdenum is cleaned and etched in a solution of 2-propanol and H.sub.2 O.sub.2.
    Type: Grant
    Filed: June 30, 1983
    Date of Patent: October 25, 1988
    Assignee: University of South Carolina
    Inventors: Tangali S. Sudarshan, Larry Park, Meng H. Lim, James E. Thompson
  • Patent number: 4778721
    Abstract: Disclosed are improved abrasion-resistant plasma coatings adapted to be coated onto substrates including polymeric substrates, glass, and metal. The method of plasma coating the substrates comprises restricting the monomer to be a silane, disiloxane, silazane, or disilazane which is substituted with at least one alkoxy group per silicon atom wherein the alkoxy group is selected from methoxy groups, ethoxy groups, and mixtures thereof. The plasma coating is applied under plasma coating conditions for a time adequate to form an abrasion-resistant coating having sufficient thickness so as to possess a Taber abrasion resistance of less than 10% haze development after 100 cycles. Abrasion resistance of some disclosed coatings is less than about 5% development after 1,000 cycles.
    Type: Grant
    Filed: July 9, 1986
    Date of Patent: October 18, 1988
    Assignee: Battelle Memorial Institute
    Inventors: Francis A. Sliemers, Uma S. Nandi, Philip C. Behrer, George P. Nance
  • Patent number: 4778694
    Abstract: A vibration damper for use with an apparatus for applying liquid to both sides of a running web and then drying the web with an air drier. Vibrations induced by the air drier are damped by uniformly blowing air on both sides of the running web between the drier and the liquid application heads. Preferably, the gas ejection surfaces are stepped or tapered so allow larger vibrations near the drier but to reduce the allowed vibration nearer the liquid application heads.
    Type: Grant
    Filed: October 19, 1987
    Date of Patent: October 18, 1988
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Norio Shibata, Tsunehiko Sato, Hideo Takeda, Naoyoshi Chino
  • Patent number: 4776938
    Abstract: A magnetic disc comprises a non-magnetic underlayer formed on a substantially flat surface of a substrate by growing grains of a magnetic material in a circumferential direction of the magnetic disc, and a magnetic layer formed on the non-magnetic underlayer, where the magnetic easy axis of the magnetic layer is oriented in the circumferential direction of the magnetic disc. A method of producing the magnetic disc forms the magnetic layer so that the magnetic easy axis thereof becomes oriented in the circumferential direction of the magnetic disc.
    Type: Grant
    Filed: September 30, 1986
    Date of Patent: October 11, 1988
    Assignee: Victor Company of Japan, Ltd.
    Inventors: Toshiro Abe, Toshikazu Nishihara
  • Patent number: 4775549
    Abstract: A method of producing a substrate structure for a large size display panel. The method involves conveying a transparent substrate from a transparent substrate storage means in a conveying path through a vacuum chamber, and while conveying the substrate, forming at least a patterned transparent conductive film on a surface of the substrate by depositing strips of conductive film on the substrate through a pattern containing member extending in a direction orthogonal to the substrate conveying direction and having strip forming openings therein at intervals along the lengths thereof, and storing the transparent substrates with the strips thereon at the end of the conveying path.
    Type: Grant
    Filed: December 19, 1985
    Date of Patent: October 4, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Isao Ota, Toshio Tatsumichi, Katsuhiko Kumagawa, Hiroshi Yamazoe, Masahiro Nagasawa
  • Patent number: 4775548
    Abstract: A method for producing a stable ceramic composition having a surface with a low friction coefficient and high wear resistance at high operating temperatures. A first deposition of a thin film of a metal ion is made upon the surface of the ceramic composition and then a first ion implantation of at least a portion of the metal ion is made into the near surface region of the composition. The implantation mixes the metal ion and the ceramic composition to form a near surface composite. The near surface composite is then oxidized sufficiently at high oxidizing temperatures to form an oxide gradient layer in the surface of the ceramic composition.
    Type: Grant
    Filed: February 25, 1987
    Date of Patent: October 4, 1988
    Assignee: Southwest Research Institute
    Inventor: James Lankford, Jr.
  • Patent number: 4775553
    Abstract: Magnetic recording media are produced by dispersing pulverulent magnetic material in a mixture of a solvent, an organic polymer binder, a dispersant and other conventional additives, with the aid of a conventional dispersing apparatus and using a particular ceramic grinding medium, applying the resulting dispersion in the form of a layer on a base and then compacting the layer.
    Type: Grant
    Filed: July 22, 1986
    Date of Patent: October 4, 1988
    Assignee: BASF Aktiengesellschaft
    Inventors: Jenoe Kovacs, Peter Engelhardt, Hermann Roller, Lothar Schwarz, Peter Nagel
  • Patent number: 4770903
    Abstract: Acicular, magnetic iron oxide consisting of a core of gamma-iron(III) oxide and a ferrite shell containing a total of from 0.4 to 12% by weight of cobalt(II) ions and from 0.1 to 15% by weight of iron(II) ions, the percentages being based on the total amount of magnetic material, is prepared by a process in which an iron(II) hydroxide precipitate is applied to the gamma-iron(III) oxide core in a first stage and an iron-(II)/cobalt hydroxide precipitate is applied to the said core in a second stage, and the core is then converted to the ferrite shell by oxidation.
    Type: Grant
    Filed: May 4, 1987
    Date of Patent: September 13, 1988
    Assignee: BASF Aktiengesellschaft
    Inventors: Ekkehard Schwab, Werner Steck, Wilhelm Schloesser, Rainer Feser
  • Patent number: 4770895
    Abstract: A method and apparatus for the control of growth of epitaxial alloy films onto a substrate. A uniformity measurement probe (5-6) scans the growing film and controls a corrector gun (9) directing a corrector beam (8) to the film. The probe (5-6) and gun (9) are correlated to determine the relevant characteristics of a point on the growing film and to apply a particular correction. Possible deposition alloys are cadmium, mercury and tellurium with the corrector beam being selected from one or more of these specie.
    Type: Grant
    Filed: April 7, 1987
    Date of Patent: September 13, 1988
    Assignee: The Commonwealth of Australia
    Inventor: Richard H. Hartley
  • Patent number: 4768464
    Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.
    Type: Grant
    Filed: September 16, 1987
    Date of Patent: September 6, 1988
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shigenori Hayashi, Naoki Hirose, Takashi Inujima, Kenji Ito
  • Patent number: 4767645
    Abstract: Semipermeable composite membranes suitable for separating organic compounds of low molecular weight from aqueous, inorganic salts containing solutions are provided. These membranes are obtained bycoating one side of a membrane support with an aqueous solution containing dissolved therein an organic, film-forming, hydrophilic polymer, and a cross-linking agent (1) and optionally ionic monomeric compounds to form at least one polymer layer,contacting the still wet polymer layer(s) interfacially with an organic solution of a cross-linking agent (2), containing at least two functional groups,drying the resultant product for a time sufficient to form the composite membrane comprising the membrane support and an asymmetrical coating consisting of polymer layer(s) and a thin semipermeable crosslinked film, containing ionic groups resting on the top of said layer and being integrally attached thereto.
    Type: Grant
    Filed: April 17, 1987
    Date of Patent: August 30, 1988
    Assignee: Aligena AG
    Inventors: Charles Linder, Mara Nemas, Mordechai Perry, Reuven Kotraro
  • Patent number: 4766007
    Abstract: A process for forming deposited film of an element or a compound on a substrate provided in a deposition chamber while applying an energy selected from the group consisting of thermal energy, electrodischarging energy and optical energy, characterized by cooling the electrode or both electrode and inner wall of a deposition chamber, which are opposed to the substrate.
    Type: Grant
    Filed: October 1, 1987
    Date of Patent: August 23, 1988
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takashi Kurokawa
  • Patent number: 4766008
    Abstract: The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.
    Type: Grant
    Filed: June 30, 1987
    Date of Patent: August 23, 1988
    Assignee: Anritsu Corporation
    Inventor: Setsuo Kodato
  • Patent number: 4762729
    Abstract: There are disclosed a cubic boron nitride coated material including a substrate and an outer layer composed principally of cubic boron nitride and formed on a surface of the substrate, comprising an intermediate layer fored of at least one intermediate layer and interposed between the substrate and outer layer, the intermediate between the substrate and outer layer, the intermediate layer or the outermost one of intermediate layers being formed of a layer of at least one nitrogen-containing compound selected from the nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof, and a producing method of the same which comprises: providing, on the surface of the substrate, an intermediate layer formed of at least one intermediate layer, the intermediate layer or the outermost one of intermediate layers being formed of a layer of at least one nitrogen-containing compound selected from the group consisting of nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof; and
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: August 9, 1988
    Assignee: Toshiba Tungaloy Co., Ltd.
    Inventors: Shin-ichi Hirano, Susumu Yamaya
  • Patent number: 4762728
    Abstract: A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously.
    Type: Grant
    Filed: November 26, 1985
    Date of Patent: August 9, 1988
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Thomas Keyser, Bruce R. Cairns, Kranti V. Anand, William G. Petro, Michael L. Barry
  • Patent number: 4762756
    Abstract: A method for the thermochemical surface treatment of workpieces in a reactive gas plasma is disclosed in which an appreciable reduction in the amount of reactive gas and energy used is achieved by working at gas pressures below 10 pascals (Pa). Particularly advantageous results are achieved with a low-voltage electrical arc discharge, which leads to an ionization of the gases used (about 50%) that is substantially higher than that, which is achieved with the methods described in the art 6 (approximately 1%). Surfaces, treated by such a conduct of the reaction, are distinguished by an increased hardness and better wear properties. The method of the invention moreover allows more numerous variation possibilities than do the methods described in the art and enables the conduct of the method to be adapted in a flexible manner to the specific requirements of the particular case.
    Type: Grant
    Filed: June 12, 1987
    Date of Patent: August 9, 1988
    Assignee: Balzers Aktiengesellschaft
    Inventors: Erich Bergmann, Elmar Hummer
  • Patent number: 4761312
    Abstract: A method of forming a very durable, waterproof, and unevenly textured coating film on the wall surfaces of a structure comprises an undercoating material consisting of a silicone-modified organic resin, an uneven textured intermediate coating material consisting of a short fiber-containing aqueous silicone emulsion which forms a rubbery elastomer by means of removal of the water, and a top coating material consisting of a silicone-type resin.
    Type: Grant
    Filed: May 26, 1987
    Date of Patent: August 2, 1988
    Assignee: Dow Corning Corporation
    Inventors: Taro Koshi, Hidetoshi Kondo
  • Patent number: 4759949
    Abstract: Disclosed is a method of insulating ferromagnetic amorphous metal strip by coating the strip with a composition of about 3 to about 32% of a metal alkoxide having a general formula of M(OR).sub.n, where M is an alkoxide forming metal, R is alkyl, and n is the valence of the M, about 56 to about 96% of a solvent for the metal alkoxide, about 1 to about 12% water, and about 0.001 to about 0.01% of an acid. The coated strip is heated at a temperature above the temperature at which the metal alkoxide hydrolizes and polymerizes and the water and solvent evaporate, and below the temperature at which the amorphous metal crystallizes. Also disclosed is ferromagnetic amorphous metal strip insulated with a coating of glass that is about 0.001 to about 0.02 mils thick.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: July 26, 1988
    Assignee: Westinghouse Electric Corp.
    Inventors: Norman M. Pavlik, John Sefko
  • Patent number: 4759948
    Abstract: Manufacturing of film through co-deposition with a high-energy beam and a low-energy beam. The low-energy beam is produced by electron beam heating or resistance heating. The high-energy beam is produced by a bucket-type ion source in which a magnetic field of multi-cusp-like configuration are employed and is composed of pulse trains in which each pulse has a duration not longer than 10 sec. and preferably in a range of 1 to 100 msec. The high-energy beam serves to clean the surface of the workpiece and form a mixed layer at interface between the workpiece and the deposited film. A film having a high quality and a strong adhesion can be obtained.
    Type: Grant
    Filed: January 29, 1987
    Date of Patent: July 26, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Isao Hashimoto, Yuzo Oka