Abstract: In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to a predetermined sequences, there are provided a temperature detector for detecting the temperature of the wafer and output control means controlling the output of the source according to a given reference value. The control unit is consitituted by memory means storing a program of executing the sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time lateral units by making different the rates of temperature change in respective time interval units, and a CPU for processing the program.

Abstract: An improved cathode assembly specifically designed to provide for the uniform, localized profiling of dopant or other alterant elements into the host matrix of a semiconductor alloy material which is continuously and uniformly deposited onto a moving substrate by a glow discharge deposition process.

Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and coaxial cables having substantially equal impedance radially extend to the reactors from a matching circuit located at the center of the circle.

Abstract: An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a tapered top provided with a concentric gas inlet, a cooled base plate supporting the reaction tube and provided with a gas outlet, and a tapered susceptor operatively supported within the reaction tube, in close proximity to its tapered top and defining an angle therebetween. This angle varies from zero to about nineteen degrees and preferably is between ten to seventeen degrees. Preferably, the susceptor is rotatably and replaceably supported by a hollow rod, axially accommodating therein a thermocouple for monitoring the temperature within the reaction tube. The tapered top of the reaction tube can be shaped like a cone or like a pyramid with planar side surfaces.

Abstract: Compact and versatile apparatus for deposition of multi-layer coatings on substrates at reduced pressure comprises at least 3 and preferably at least 4 evacuable deposition chambers, means for evacuating each of said deposition chambers and coating means in each of said deposition chambers for depositing a coating layer on a substrate; an evacuable transfer chamber with closable ports between said transfer chamber and each of said coating chambers for transfer of a substrate to be coated between said deposition chambers; means for evacuating said transfer chamber; and transfer means for transferring a substrate between said deposition chambers via the transfer chamber. The apparatus is especially useful for the production of photovoltaic cells in which the active layers are formed of amorphous silicon deposited from a glow discharge.

Abstract: A molecular beam epitaxy system wherein the wafer on which epitaxial deposition is to occur is not soldered to a substrate holder. Instead, a substrate holder with a lip approximately as high as the thickness of the wafer is used, and a retaining ring attaches to the substrate holder to hold the wafer in place during the growth cycle. The retaining ring, like the substrate holder, is made of high-purity refractory material, such as arccast molybdenum. The substrate holder and retaining ring are dimensioned to hold the wafer somewhat loosely, to allow for thermal expansion during the cycling up to growth temperature, which is typically about 600.degree. C.

Abstract: A vacuum processing apparatus and method utilize a vacuum chamber formed from a pair of casing sections, one of which is movable in to and out of sealing engagement with the other casing section. The movable casing section is equipped to carry a workpiece such that the workpiece is carried by the movable casing section as it moves into and out of sealing engagement with the other casing section and such that the workpiece is delivered to a processing station associated with the other casing section when the two casing sections are in sealing engagement with each other.

Abstract: In the continuous vapor deposition coating of a metal strip, the coating amount can be rapidly changed by keeping the vapor flow at acoustic velocity and changing the cross-sectional area of the vapor path.

Abstract: Apparatus in a vacuum deposition system positions a workpiece holder in substantial alignment with a source of material to be deposited onto a work piece affixed to the workpiece holder. The apparatus also rotates the workpiece holder about the deposition source and linearly drives the workpiece holder to varying distances from the deposition source. The apparatus used to drive the workpiece holder is sealably mounted atop an opening in the vacuum chamber. The apparatus enables multiple source depositions to be carried out consecutively without accessing the vacuum chamber. By aligning the workpiece holder over the deposition source, nonuniform deposition onto the workpiece is substantially eliminated.

Abstract: A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.

Abstract: A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Abstract: A rotary substrate holder of a molecular beam epitaxy apparatus including leads-cum-posts serving both as leads for passing a current to a heater for heating a substrate and as posts for supporting the heater. By this arrangement, heat transferred from the heater to a bearing disposed in the vicinity of the heater is minimized in amount, thereby prolonging the service life of the holder and minimizing a heat loss thereof.

Abstract: A jig apparatus for arraying and supporting work to be soldered wherein a plurality of lower supporting bars for supporting the lower side of a work are arranged so as to extend in a frame designed to be mounted on a conveyor holder of an automatic soldering line, upper supporting bars are arranged so as to extend above and in parallel with the lower supporting bars to press the work from the upper side thereof. The upper supporting bars have one end fitted to the frame. A gate member supports the other end of the upper supporting bars and movable up and down with respect to the frame. Work insertion openings are formed in the frame such as to oppose the gate member. The lower supporting bars are made of elongated channel members with a substantially U-shaped cross-section, each of the elongated channel members having holes formed in the floor thereof.

Abstract: An apparatus for automatically controlling the rate of vacuum deposition of thin films on a substrate, consisting of an optical diaphragm or shutter in the form of two overlapping plates which together define a shutter opening between an evaporation crucible and a substrate. The overlapping plates are attached to a pair of rack gears to be moved in opposite directions by a pinion gear to vary the size of the shutter opening through which the evaporated material must pass to be deposited on the substrate. The rate of evaporation is sensed by a quartz crystal monitor and a signal therefrom is compared to a reference signal. The difference between the two signals is used to control the movement of the apertured plates thereby correcting the rate of deposition of the thin film.

Abstract: An improved crystal plating device having a base containing a power circuit and an oscillating circuit. The base is provided with a chamber and has a sealed top enclosing the chamber. At least one pair of filament posts are fixed to the base and disposed within the chamber and in the power circuit. A filament is connected across the filament post. A crystal holder is removably connected with the base. The crystal is held by the holder in the oscillating circuit. A pump is connected to the base to vacuum pump the chamber. Energizing the circuits will oscillate the crystal and evaporate the filament to plate the crystal and produce the desired frequency therefore. The improvement comprises a crystal holder designed to hold a plug-in circuit board having a plurality of prongs, the board containing the crystal. The crystal holder includes plug-in means for inserting the prongs of the circuit board in the oscillating circuit.

Abstract: A novel modular V-CVD diffusion furnace includes a cylindrical quartz diffusion tube having integral end flanges, a first metallic sealing plate having gas ports removably fastened to one flange, a second metallic sealing plate having a plurality of precisely aligned gas injection tube receiving apertures removably fastened to the other flange, a like plurality of gas injection tubes slidably mounted in and sealed to corresponding gas injection tube receiving apertures, and a cylindrical quartz liner slidably mounted in the cylindrical diffusion tube.

Abstract: A side lifting wafer boat assembly is provided comprising a wafer supporting boat and boat lifting tool. The boat lifting tool is detachably engageable along the length of a boat. The tool is designed to permit sideway engagement with boats specifically designed for side lifting, or with boats that may also be end lifted, using a fork-like member which engages elongated pickup tubes.

Abstract: Process and apparatus for providing the application of glue on preselected zones of a printed circuit, according to which provision is made for a tank containing liquid glue, and a series of push rods arranged at preselected positions, which first contact the glue in said tank, then deposit the drops of glue on a board for printed circuits.

Abstract: An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by provided an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.

Abstract: An evaporator cell for vacuum deposition on substrates comprises a cell housing which has one end with a vapor escape opening and an opposite end into which is positionable a plug member which is moved in the housing so that its closed end be positioned in a position closing the vapor escape opening or away therefrom into various opening positions for regulating the amount of vapor which escapes during the vapor deposition. The plug is advantageously a closed tubular member which contains a heating element therein and is advantageously moved by means of a plunger which is mounted in a wall of the evaporator so as to be sealed.