Patents Examined by Beverly A. Pawbkowski
  • Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
    Patent number: 4877757
    Abstract: A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
    Type: Grant
    Filed: December 7, 1988
    Date of Patent: October 31, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Rudy L. York, Joseph D. Luttmer, Patricia B. Smith, Cecil J. Davis