Patents Examined by Bret P Chen
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Patent number: 11976355Abstract: A method for producing a part having improved resistance to oxidation and high temperature-corrosion, includes the formation of an environmental barrier coating on an at least partially ceramic matrix composite material, the environmental barrier coating being formed by direct liquid injection-metal organic chemical vapor deposition.Type: GrantFiled: September 20, 2021Date of Patent: May 7, 2024Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, SAPRAN CERAMICS, UNIVERSITE DE BORDEAUXInventors: Arnaud Delehouze, Eric Bouillon, Sylvain Lucien Jacques
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Patent number: 11975357Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.Type: GrantFiled: December 9, 2021Date of Patent: May 7, 2024Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
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Patent number: 11970777Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.Type: GrantFiled: June 24, 2022Date of Patent: April 30, 2024Assignee: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
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Patent number: 11970769Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.Type: GrantFiled: June 21, 2022Date of Patent: April 30, 2024Assignee: ASM IP Holding B.V.Inventors: Trigagema Gama, Ryu Nakano
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Patent number: 11967488Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.Type: GrantFiled: May 16, 2022Date of Patent: April 23, 2024Assignee: ASM IP Holding B.V.Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
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Patent number: 11967534Abstract: A technique capable of coping with change in the environment for each of the substrate placing surfaces is provided. According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: (a) supplying a gas to a process vessel through branch pipes while substrates are placed on substrate placing surfaces arranged in the process vessel, respectively; (b) detecting at least one among: information of a component corresponding to each of the substrate placing surfaces; and an amount of the gas supplied to each of the branch pipes; (c) determining a state level of each of the substrate placing surfaces based on the detected information; and (d) selecting a substrate placing surface among the substrate placing surfaces to which a substrate subsequently loaded into the process vessel is to be transferred next according to the state level of each of the substrate placing surfaces.Type: GrantFiled: June 16, 2021Date of Patent: April 23, 2024Assignee: Kokusai Electric CorporationInventor: Tsukasa Kamakura
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Patent number: 11958074Abstract: A method includes a step of applying an aqueous 2-package type first colored paint to form an uncured first colored coating film; a step of applying an aqueous 1-package type second colored paint to form an uncured second colored coating film; a step of applying a solvent-based 2-package type clear paint to form an uncured clear coating film; and a step of heating the uncured first colored coating film, the uncured second colored coating film and the uncured clear coating film to 75 to 100° C. to simultaneously cure these films. The solvent-based 2-package type clear paint contains a hydroxyl group-containing acrylic resin and a polyisocyanate compound in a ratio of 1.5 to 2.0 equivalents of isocyanate groups in the polyisocyanate compound relative to 1 equivalent of hydroxyl groups in the hydroxyl group-containing acrylic resin.Type: GrantFiled: December 18, 2019Date of Patent: April 16, 2024Assignees: KANSAI PAINT CO., LTD, NISSAN MOTOR CO., LTD.Inventors: Tatsuo Ohnuki, Kenichi Umezawa, Junpei Suzuki, Tomoyuki Okamoto, Chie Michiura, Takamitsu Ono, Yoshiaki Tomiyama
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Patent number: 11959170Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.Type: GrantFiled: May 28, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soyoung Lee, Hyunjae Lee, Ik Soo Kim, Jang-Hee Lee
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Patent number: 11959164Abstract: This invention provides a process or fabrication method of forming broadband anti-reflective (AR) coating over the mid-IR fluoride fiber for high power laser applications in mid-IR wavelength range. The AR coating consists of multiple-pair Lithium fluoride (LiF) and Al2O3, and was deposited by electron beam physical vapor deposition with an iron assistant source at low temperature (<60° C.). A thin encapsulation layer of Al2O3 was applied over the AR coating by atomic layer deposition technology. The measurements show the coating has a reflectivity of <1-1.5% in the range of 1.5-5.5 ?m. The laser induced damage threshold (LIDT) test shows the damage threshold is greater than 8.9 MW/cm2 with no sign of any damage on the coating exposed to atmosphere. The durability and environmental tests of the AR coating with PVD coated encapsulation layer show good humidity resistance in open air and no degradation of film quality and optical performance are observed.Type: GrantFiled: March 10, 2022Date of Patent: April 16, 2024Inventors: Yimin Hu, Feng Niu, Wei Lu
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Patent number: 11959171Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 ??-cm at a film thickness of less than 50 nanometers.Type: GrantFiled: July 18, 2022Date of Patent: April 16, 2024Assignee: ASM IP Holding B.V.Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
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Methods of forming structures, semiconductor processing systems, and semiconductor device structures
Patent number: 11959173Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.Type: GrantFiled: March 17, 2022Date of Patent: April 16, 2024Assignee: ASM IP Holding B.V.Inventors: Amir Kajbafvala, Yanfu Lu, Robinson James, Caleb Miskin -
Patent number: 11961716Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.Type: GrantFiled: December 9, 2021Date of Patent: April 16, 2024Assignee: Industrial Technology Research InstituteInventors: Hsuan-Fu Wang, Fu-Ching Tung, Ching-Chiun Wang
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Patent number: 11959187Abstract: Synthetic brochosomes can be prepared by disposing a monolayer of first polymer microspheres on a substrate and forming a layer of metal on the monolayer of the first polymer microspheres. A monolayer of second polymer microspheres is then disposed on the layer of metal to form a template. The second polymer microspheres are smaller than the first polymer microspheres. A brochosome material is then electrodeposited on the template. The brochosome material is selected from the group consisting of a metal, a metal oxide, a polymer or a hybrid thereof. The first polymer microspheres and the second polymer microspheres are then removed to form a coating of synthetic brochosomes of the brochosome material on the substrate.Type: GrantFiled: January 11, 2021Date of Patent: April 16, 2024Assignee: THE PENN STATE RESEARCH FOUNDATIONInventors: Tak-Sing Wong, Shikuan Yang, Nan Sun, Birgitt Boschitsch
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Patent number: 11950666Abstract: A method includes the selection of a jewelry blank having a chamber for receiving a gem. The chamber is partially filled with a first layer of UV resin. Cremation remains are placed within the first layer of resin or on the surface of the first layer of resin. Then, UV light is used to cure the first layer of resin. A second layer of resin partially fills the remaining void and is cured. Diamond dust may be added to the top surface of the cured second layer. A final layer of protective resin is added into the remaining space of the chamber and cured to create the finished jewelry piece.Type: GrantFiled: May 17, 2021Date of Patent: April 9, 2024Assignee: EverWith Ltd.Inventor: Jonathan Burton
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Patent number: 11955322Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.Type: GrantFiled: June 25, 2021Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming Che Chen, Wei-Chen Liao
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Patent number: 11939668Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.Type: GrantFiled: April 26, 2022Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Zubin Huang, Mohammed Jaheer Sherfudeen, David Matthew Santi, Jallepally Ravi, Peiqi Wang, Kai Wu
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Patent number: 11939674Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.Type: GrantFiled: March 2, 2023Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Yi Yang, Krishna Nittala, Karthik Janakiraman, Aykut Aydin, Diwakar Kedlaya
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Patent number: 11939669Abstract: A coating method for preparing diamond thin film continuously by HFCVD device includes the steps of: (a) carbonizing left and right chamber hot filaments; (b) disposing a substrate on a platform along with a trolley in a sample access chamber under vacuum condition; opening a left chamber gate valve and moving the substrate to left thin film growth chamber; closing the left chamber gate valve to grow diamond thin film on the substrate; (c) repeating step (b) by using a right chamber gate valve and right thin film growth chamber to grow diamond thin film; (d) opening the left chamber gate valve and moving the substrate to the sample access chamber; closing the left chamber gate valve and dropping to room temperature while under vacuum condition; releasing the vacuum condition and taking out the substrate with diamond thin film; (e) repeating step (d) for the right chamber gate valve.Type: GrantFiled: November 26, 2019Date of Patent: March 26, 2024Inventors: Lusheng Liu, Xin Jiang, Nan Huang
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Patent number: 11939437Abstract: A method for producing a fiber for reinforcing rubber, comprising applying an adhesion treatment liquid containing a thermoplastic elastomer, a blocked polyisocyanate, and a rubber latex to a fiber cord to obtain a fiber for reinforcing rubber, wherein the thermoplastic elastomer is incorporated in the form of a water dispersion into the adhesion treatment liquid, wherein the thermoplastic elastomer particles in the water dispersion have an average particle diameter of 0.01 to 1.0 ?m.Type: GrantFiled: December 17, 2019Date of Patent: March 26, 2024Assignee: TEIJIN FRONTIER CO., LTD.Inventor: Yoshifumi Suzuki
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Patent number: 11913112Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).Type: GrantFiled: January 27, 2022Date of Patent: February 27, 2024Assignee: Versum Materials US, LLCInventors: Xinjian Lei, Jianheng Li, John Francis Lehmann, Alan Charles Cooper