Patents Examined by Brian E. Heaern
  • Method of manufacturing a DMOS device
    Patent number: 4904613
    Abstract: A method of manufacturing a semiconductor device in which a conductive layer (6) provided on a surface (4) of a semiconductor body (1) is formed with at least one opening (10). The semiconductor device may be an insulated gate field effect transistor (IGFET) in which case the opening (10) defines a hollow gate structure for the IGFET. Insulating material (16') is grown on the surface (4) to cover the conductive layer.
    Type: Grant
    Filed: December 21, 1987
    Date of Patent: February 27, 1990
    Assignee: U.S. Philips Corporation
    Inventors: David J. Coe, Kenneth Whight, Richard J. Tree