Abstract: A one-by-one type heat-processing apparatus is disclosed. The one-by-one type heat-processing apparatus includes a processing vessel for processing a semiconductor wafer. A susceptor having a support surface for placing the semiconductor wafer is arranged in the processing vessel. A shower head section is arranged at an interval with respect to the support surface of the susceptor. Processing gas supply pipes for supplying a processing gas are independently connected to the shower head section. A plurality of gas injection holes are formed in the shower head section. First to third heating means for heating the susceptor are attached to the susceptor. The first heating means having a disk-like shape is arranged at almost the center on the lower surface side of the susceptor. The second heating means is concentrically arranged to surround the first heating means. The third heating means is arranged at the peripheral edge portion of the susceptor.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.