Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: To provide an organic electroluminescence device having a high luminous efficiency and a novel compound that can be used as a material for an organic electroluminescence device having a high luminous efficiency. A compound represented by the following formula (3-I), wherein at least one of R1 to R7 and R10 to R11 is —N(R36)(R37). R31 to R37 are independently a hydrogen atom, a substituted or unsubstituted alkyl group including 1 to 50 carbon atoms, a substituted or unsubstituted cycloalkyl group including 3 to 50 ring carbon atoms, a substituted or unsubstituted aryl group including 6 to 50 ring carbon atoms or a substituted or unsubstituted monovalent heterocyclic group including 5 to 50 ring atoms.

Abstract: The present description relates to a gallium nitride transistor which includes at least one source/drain structure having low contact resistance between a 2D electron gas of the gallium nitride transistor and the source/drain structure. The low contact resistance may be a result of at least a portion of the source/drain structure being a single-crystal structure abutting the 2D electron gas. In one embodiment, the single-crystal structure is grown with a portion of a charge inducing layer of the gallium nitride transistor acting as a nucleation site.

Abstract: A method is provided for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer. The method includes manufacturing the second wafer in accordance with a periodicity that matches the periodicity of the first wafer. The method further includes placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer. The method also includes stacking the first wafer onto the second wafer. The first wafer includes logic circuitry, and the second wafer includes a backside illuminated image sensor.

Abstract: A method is provided for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer. The method includes selecting a periodicity for the second wafer to be manufactured that matches the periodicity of the first wafer. The method further includes manufacturing the second wafer in accordance with the selected periodicity. The method also includes placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer. The method additionally includes stacking the first wafer onto the second wafer, using a copper-to-copper bonding process to bond the first wafer to the second wafer.

Abstract: To provide an organic electroluminescence device having a high luminous efficiency and a novel compound that can be used as a material for an organic electroluminescence device having a high luminous efficiency. A compound represented by the following formula (3-I), wherein at least one of R1 to R7 and R10 to R11 is —N(R36)(R37). R31 to R37 are independently a hydrogen atom, a substituted or unsubstituted alkyl group including 1 to 50 carbon atoms, a substituted or unsubstituted cycloalkyl group including 3 to 50 ring carbon atoms, a substituted or unsubstituted aryl group including 6 to 50 ring carbon atoms or a substituted or unsubstituted monovalent heterocyclic group including 5 to 50 ring atoms.

Abstract: A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R? each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted.

Abstract: An object of the present invention is to provide a semiconductor module with high heat dissipation at a low cost. A semiconductor module according to the present invention includes: a case having a hollow portion; a base board made of an aluminum alloy having a first portion corresponding to the hollow portion of the case, and a second portion corresponding to a main body portion of the case, the base board being attached to a bottom face of the case via the second portion; a ceramic insulating substrate disposed on the first portion of the base board; a wiring pattern disposed on the ceramic insulating substrate; semiconductor elements disposed on the wiring pattern; metal wiring boards connected to the semiconductor elements; and a sealing resin that seals the hollow portion of the case.

Abstract: A processing method for processing a workpiece includes a holding step of holding the front surface side of the workpiece on which an alignment mark is formed by a holding table having a holding surface that reflects a near-infrared ray and exposing the back surface side and an imaging step of emitting the near-infrared ray toward the back surface side of the workpiece held by the holding table and imaging the workpiece by an imaging unit that has sensitivity to the near-infrared ray and faces the back surface side of the workpiece to form a captured image. The processing method also includes an alignment mark detection step of detecting the alignment mark based on the captured image and a processing step of processing the workpiece held by the holding table by a processing unit based on the detected alignment mark.

Abstract: A composition suitable for use in an organic light-emitting layer (103) of an organic light-emitting device having an anode (101) and a cathode (105), the composition comprising a fluorescent light-emitting material, a first triplet-accepting material and a second triplet-accepting material that is different from the first triplet-accepting material. The fluorescent light-emitting material may be a repeat unit of a light-emitting polymer, and the first and second triplet-accepting materials may independently be repeat units of the light-emitting polymer or may be mixed with the fluorescent light-emitting material.

Abstract: Textiles coupled with electrical components that are responsive to actions of the wearer and the surrounding environment. The textiles comprise a variety of sensors that interface with the cloud, networks, and devices. The textiles monitor physiological characteristics of the wearer. Objects in the environment may interact with the electrical components of the textiles. Micro-Electro-Mechanical Systems that include electrical components, such as, accelerometers, gyroscopes, Bluetooth chips, NFC chips, and RF tags integrate with the textiles to wirelessly communicate with networks.

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

Abstract: The invention relates to a lighting device comprising an illuminant embodied as an OLED, and comprising a capacitive switching means, which are arranged on a substrate, wherein the illuminant has a first electrically conductive electrode and a second electrically conductive electrode, wherein a layer comprising organic, electroluminescent material is arranged between the first electrode and the second electrode, wherein the switching means has an electrode, wherein one electrode from the first electrode or the second electrode of the illuminant together with the electrode of the switching means is arranged in one plane, wherein a nonconductive spacing amounting to between 100 ?m and 700 ?m, more particularly between 400 ?m and 600 ?m, is present between said one electrode of the illuminant and the electrode of the switching means in the plane.

Abstract: A remote platform receives plant selection criteria and determines a plant selection based on the plant selection criteria. The plant selection criteria may include a plant preference, a budget preference, and garden parameters measured by sensors in a garden.

Abstract: A power transistor assembly and method of operating the assembly are provided. The power transistor assembly includes integrated transient voltage suppression on a single semiconductor substrate and includes a transistor formed of a wide band gap material, the transistor including a gate terminal, a source terminal, and a drain terminal, the transistor further including a predetermined maximum allowable gate voltage value, and a transient voltage suppression (TVS) device formed of a wide band gap material, the TVS device formed with the transistor as a single semiconductor device, the TVS device electrically coupled to the transistor between at least one of the gate and source terminals and the drain and source terminals, the TVS device including a breakdown voltage limitation selected to be greater than the predetermined maximum allowable gate voltage value.

Abstract: A system and method are provided that employ the variability of physiological waveforms to estimate the time to death after WLST, or time to inadequate organ perfusion. From the variability data one can derive an index subsequently used to determine the probability of death (or inadequate organ perfusion) within a given time frame in an automated fashion from bedside monitors in the intensive or post-anesthesia care unit. The resulting variability index can also be combined with the clinical variables used in other death prediction tools to enhance the performance and outcome when compared to existing models. In at least one implementation, variability monitoring at the bedside could be used to provide estimates of the probability that a patient will die within a certain time frame after WLST. These estimates could be used to reduce the distress of the patients' families, as well as optimize the use of resources surrounding donation.

Abstract: A flexible display apparatus including a substrate including a flat surface portion and at least one curved surface portion, and a display including a first display region above the flat surface portion and a second display region above the at least one curved surface portion. The second display region includes a correcting layer including a first point and a second point apart from each other. The second point is farther away from the first display region than the first point. A thickness of the correcting layer at the second point is greater than a thickness of the correcting layer at the first point. The correcting layer includes a curved portion between the first point and the second point.

Abstract: Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer.

Abstract: In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure.

Abstract: A method for forming patterns of semiconductor device is provided in the present invention, with steps of filling up first self-assembly material in first openings in a dielectric layer, phase-separating the first self-assembly material to form a first portion and a second portion surrounding the first portion, removing the first portion and performing a first etch process to form a first mask pattern in a mask layer, forming a second dielectric layer and repeating the above steps to form a second mask pattern in the mask layer, wherein the second mask pattern is aligned with the first mask pattern to form a common mask pattern.