Abstract: A bi-directional switch includes a well region of a first conductivity type placed within a substrate. A first region of second conductivity type is placed within the well. A second contact region of second conductivity type is placed within the well. A drift region of second conductivity is placed between the first contact and the second contact. The drift region is separated from the first contact by a first channel region and is separated from the second contact by a second channel region. A first gate region is placed over the first channel region and a second gate region over the second channel region.