Abstract: A method for forming passive electrical devices that includes depositing a photo reactive layer over a sidewall of a via that extends through a printed circuit board; inserting a light pipe having a mask configured to provide a passive electronic device geometry within the via to an entire depth of the via; and exposing the photo reactive layer to radiation provided by the light pipe to provide a pattern having the passive electronic device geometry on the sidewall of the via.
Type:
Grant
Filed:
January 26, 2018
Date of Patent:
November 10, 2020
Assignee:
International Business Machines Corporation
Inventors:
Gerald Bartley, Darryl Becker, Matthew Doyle, Mark Jeanson
Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.
Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.
Abstract: A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.
Abstract: A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on the photomask is minimized.
Abstract: An extreme ultraviolet (EUV) mask including an absorber structure is disclosed. The absorber structure may include at least one slanted and/or concave sidewall. The absorber structure may include a sidewall including a step. A method of forming an absorber for an EUV mask is disclosed. The method may include etching an absorber layer using a mask to form an absorber structure having a sidewall wherein an outer edge of the top surface of the sidewall is closer to a central vertical axis of the absorber structure than an outer edge of the bottom surface of the sidewall. The method may include performing additional etching steps to form a step along the sidewall of the absorber structure. The etching may include combinations of anisotropic etching in different directions, and/or isotropic etching. The method may include etching an absorber layer including multiple absorber layers having different material properties on the ML reflector.
Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.
Abstract: The present specification relates to a photomask, a laminate including the photomask, a method for manufacturing the photomask and a method for forming a pattern using the photomask.
Type:
Grant
Filed:
July 28, 2016
Date of Patent:
August 18, 2020
Assignee:
LG CHEM, LTD.
Inventors:
Yong Goo Son, Kiseok Lee, Seung Heon Lee
Abstract: The present specification relates to a photomask, a laminate including the photomask, a method for manufacturing the photomask, a device for forming a pattern using the photomask, and a method for forming a pattern using the photomask.
Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.
Type:
Grant
Filed:
December 6, 2016
Date of Patent:
July 28, 2020
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Jeong Ju Park, Kyeongmi Lee, Seungchul Kwon, Eunsung Kim, Shiyong Yi
Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.
Abstract: An immersion liquid is provided comprising an ion-forming component, e.g. an acid or a base, which has a relatively high vapor pressure. Also provided are lithography processes and lithography systems using the immersion liquid.
Type:
Grant
Filed:
September 18, 2017
Date of Patent:
July 14, 2020
Assignee:
ASML Netherlands B.V.
Inventors:
Hans Jansen, Marco Koert Stavenga, Jacobus Johannus Leonardus Hendricus Verspay, Franciscus Johannes Joseph Janssen, Anthonie Kuijper
Abstract: According to an exemplary embodiment of the present invention, there are provided an organic treatment solution for patterning chemically amplified resist films, an organic treatment solution containing 1 ppm or less of an alkyl olefin having a carbon number of 22 or less and having a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn, a pattern formation method, an electronic device manufacturing method, and an electronic device use the same.
Abstract: Pellicle-mask systems for advanced lithography, such as extreme ultraviolet lithography, are disclosed herein. An exemplary pellicle-mask system includes a mask having an integrated circuit (IC) pattern, a pellicle membrane, and a pellicle frame. The pellicle frame has a first surface attached to the pellicle membrane and a second surface opposite the first surface attached to the mask, such that the IC pattern of the mask is positioned within an enclosed space defined by the mask, the pellicle membrane, and the pellicle frame. A void is defined between the pellicle frame and the mask, where the void is defined by a portion of the second surface of the pellicle membrane not attached to the mask. The void is not in communication with the enclosed space and is not in communication with an exterior space of the pellicle-mask system.
Abstract: Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.
Abstract: Systems and methods for patterning nail polish are disclosed. In one embodiment, the system includes a source of light, and a programmable mask that can selectively transmit light to a photoresist nail polish. In some embodiments, the programmable mask is a liquid crystal display (LCD) or a digital light processing screen (DLP). The system may also include a controller configured for controlling the light transmission properties of the programmable mask.
Abstract: Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.
Type:
Grant
Filed:
September 22, 2014
Date of Patent:
June 9, 2020
Assignee:
Intel Corporation
Inventors:
Manish Chandhok, Todd R. Younkin, Sang H. Lee, Charles H. Wallace
Abstract: An all solution-processed deposition includes a non-water soluble, non-self-cracking film deposited by a solution process (e.g., spray, dip, spin coat, and the like), a water soluble, self-cracking film deposited by a solution process (e.g., spray, dip, spin coat, and the like), cracking of the film, and filling the cracks with a metal that is deposited in solution (e.g., by electroless disposition). A transparent substrate having a cracked water insoluble, non-self-cracking film surface coating includes a plurality of fissures therein extending to and exposing portions of the surface of the underlying transparent substrate is useful for producing a transparent conducting film.
Type:
Grant
Filed:
March 10, 2017
Date of Patent:
June 2, 2020
Assignee:
The Trustees of Boston College
Inventors:
Michael J. Naughton, Chaobin Yang, Kris Kempa, Michael J. Burns
Abstract: A method of producing a layer structure and a method of forming a pattern, the method of producing a layer structure including coating a first composition on a substrate that has a pattern thereon; curing the coated first composition to form a first organic layer; applying a liquid material to the first organic layer to remove a part of the first organic layer; and coating a second composition on remaining parts of the first organic layer; and curing the coated second composition on the remaining parts of the first organic layer to form a second organic layer: wherein the first composition and the second composition each independently include a solvent, and a polymer including a structural unit represented by Chemical Formula 1, *A1-B1*.
Type:
Grant
Filed:
September 14, 2016
Date of Patent:
May 26, 2020
Assignee:
Samsung SDI Co., Ltd.
Inventors:
Seulgi Jeong, Minsoo Kim, Sunghwan Kim, Hyunji Song, Sunhae Kang, Youngmin Kim, Yoona Kim, Jinhyung Kim, Younhee Nam, Jaeyeol Baek, Byeri Yoon, Chungheon Lee, Seunghee Hong, Sunmin Hwang
Abstract: A method of fabricating a photomask comprising providing a photomask blank including a phase shifting layer, a first light blocking layer, a first resist layer, a second light blocking layer and a second resist layer stacked sequentially in this order on a substrate, forming second resist patterns, forming second light blocking patterns, forming first resist patterns, forming first light blocking patterns and phase shifting patterns, removing the first resist patterns, and selectively removing at least one of the first light blocking patterns, wherein the second resist layer has a thickness such that all of the second resist layer is removed while the first resist layer is patterned for exposing the second light blocking layer.