Abstract: According to one embodiment, a display device comprises a first area including a pixel and a second area different from the first area, wherein the pixel comprises a pixel electrode, an organic material layer including a light-emitting layer, a common electrode, a first insulating layer, a second insulating layer having a refractive index lower than that of the first insulating layer, and a third insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area comprises the first insulating layer provided therein, the second area does not comprise the second insulating layer.

Abstract: A metasurface includes a substrate with a first surface area having first surface energy, and a second surface area formed to surround the first surface area and having second surface energy less than the first surface energy, a polymer layer provided on the substrate at a position corresponding to the first surface area and including a polymer material and a metal reflective layer provided on the polymer layer and having a phase modulation surface including metal.

Abstract: An IGBT (2), a diode (3), and a well region (4) are provided on a semiconductor substrate (1). The IGBT (2) includes a trench gate (6) provided on the first principal surface of the semiconductor substrate (1). The diode (3) includes a p-type anode layer (19) provided on the first principal surface of the semiconductor substrate (1). The well region (4) includes a p-type well layer (21) provided on the first principal surface of the semiconductor substrate (1), having an impurity concentration higher than that of the p-type anode layer (19), and having a depth larger than that of the trench gate (6). A terminal end of the trench gate (6) is surrounded by the p-type well layer (21). The diode (3) is provided on an outer side of the IGBT (2) in the semiconductor substrate (1). The well region (4) is provided on an outer side of the diode (3) in the semiconductor substrate (1).

Abstract: A light-emitting element may include a first electrode, a second electrode facing the first electrode, a first hole transport layer disposed above the first electrode, a first electron transport layer disposed between the first hole transport layer and the second electrode. A first light-emitting part and a second light-emitting part that emit different light may be disposed between the first hole transport layer and the first electron transport layer. The first light-emitting part may include a first blue emission layer, a second electron transport layer, a charge generation layer, and a second blue emission layer, and the first blue emission layer may be disposed above the first hole transport layer. At least one of the first electron transport layer and the second electron transport layer may be directly disposed above at least one of the first blue emission layer and the second blue emission layer.

Abstract: A surface mount component is disclosed including an electrically insulating beam that is thermally conductive. The electrically insulating beam has a first end and a second end that is opposite the first end. The surface mount component includes a thin-film component formed on the electrically insulating beam adjacent the first end of the electrically insulating beam. A heat sink terminal is formed on the electrically insulating beam adjacent a second end of the electrically insulating beam. In some embodiments, the thin-film component has an area power capacity of greater than about 0.17 W/mm2 at about 28 GHz.

Abstract: A display device includes an encapsulating structure disposed on an array substrate, a bottom cover accommodating therein the array substrate and the encapsulating structure, and at least one heat dissipation pattern disposed between the encapsulating structure and the bottom cover. The heat dissipation pattern may include a porous framework layer and a heat emission layer composed of particles coated on the framework layer. This heat dissipation pattern may allow heat transfer from the encapsulating structure to the bottom cover to be performed more quickly and efficiently.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: The present disclosure relates to an optoelectronic device based on a dual micro-cavity structure, and more particularly, to a technology that simultaneously realizes the high Q factors of the three primary colors in an optoelectronic device based on a dual micro-cavity structure. The optoelectronic device according to one embodiment of the present disclosure is applied to a self-emissive device, and includes a first reflector layer, an active cavity layer formed on the first reflector layer, a second reflector layer formed on the active cavity layer, an external cavity layer formed on the second reflector layer, a third reflector layer formed on the external cavity layer, and a passivation layer formed on the third reflector layer, wherein a first micro-cavity corresponding to the first and second reflector layers and a second micro-cavity corresponding to the second and third reflector layers may be generated.

Abstract: A light-emitting device includes a first electrode, a second electrode facing the first electrode, an interlayer disposed between the first electrode and the second electrode and including an emission layer, a first capping layer, and a second capping layer. A refractive index of the first capping layer is greater than a refractive index of the second capping layer, and the first capping layer and the second capping layer are each an organic layer. An electronic apparatus including the light-emitting device is also provided.

Abstract: An electroluminescent display device includes an electroluminescent display device includes a substrate; a first pixel row on the substrate including a first plurality of pixels arranged along a first direction; a second pixel row on the substrate including a second plurality of pixels arranged along the first direction, the second pixel row being spaced apart from the first pixel row in a second direction; a first groove between the first and second pixel rows; and a light emitting diode in each pixel of the first and second pixel rows, wherein the first groove includes a first portion at one end of the first pixel row, a second portion at the other end of the first pixel row and a third portion between the first and second portions, and wherein third portion is smaller than the first portion and greater than the second portion.

Abstract: According to one embodiment, a manufacturing method of a display device includes preparing a processing substrate by forming a lower electrode, forming a rib, and forming a partition including a lower portion and an upper portion, forming an organic layer on the lower electrode, forming an upper electrode on the organic layer, forming a first transparent layer on the upper electrode, and forming a second transparent layer on the first transparent layer. The first transparent layer and the second transparent layer are formed of organic materials different from each other. A refractive index of the second transparent layer is less than a refractive index of the first transparent layer.

Abstract: A display apparatus includes: a thin-film transistor including a source electrode, a drain electrode, and a gate electrode; a data line in a layer different from the source electrode, the drain electrode, and the gate electrode, wherein the data line is configured to transmit a data signal; and a shield layer between the data line and a component of the thin-film transistor.

Abstract: Discussed is a display device for improving both transmittance and efficiency of light that is transmitted through a light-emitting unit and a transmissive unit due to a phase difference of ? at an interface between an organic layer and an optical compensation layer of the display device.

Abstract: Described herein are apparatuses, systems, and methods associated with a voltage regulator circuit that includes one or more thin-film transistors (TFTs). The TFTs may be formed in the back-end of an integrated circuit. Additionally, the TFTs may include one or more unique features, such as a channel layer treated with a gas or plasma, and/or a gate oxide layer that is thicker than in prior TFTs. The one or more TFTs of the voltage regulator circuit may improve the operation of the voltage regulator circuit and free up front-end substrate area for other devices. Other embodiments may be described and claimed.

Abstract: A novel light-emitting device with high emission efficiency is provided. A light-emitting device with a high blue index (BI) is provided. A light-emitting device with low power consumption is provided. A light-emitting device including a first electrode and a second electrode which are a reflective electrode and a semi-transmissive and semi-reflective electrode, and an EL layer sandwiched between the first electrode and the second electrode, where the EL layer contains an emission center substance, where when the emission center substance in the EL layer includes only one kind of substance, photon energy of a peak wavelength of light emitted from the light-emitting device is designed from an average value of photon energy of light emitted by the emission center substance in a solution state and emission edge energy on a short wavelength side of an emission spectrum of the emission center substance in the solution state.

Abstract: A light-emitting device including a first electrode, a second electrode, and a light-emitting film disposed between the first electrode and the second electrode, and a method of producing the device. The light-emitting film includes a fluorine-containing organic salt, and quantum dots that do not include cadmium, lead, or a combination thereof, and the fluorine-containing organic salt includes a substituted or unsubstituted C1 to C30 hydrocarbon group, a non-metallic element, fluorine, and at least one of boron or phosphorus, and the non-metallic element includes carbon, nitrogen, oxygen, phosphorus, sulfur, or selenium.

Abstract: A display device and a method of fabricating a display device are provided. The display device includes a substrate comprising a contact area and a line area, a first electrode that extends in a first direction on the substrate, a first electrode pattern that extends in the first direction and is spaced apart from the first electrode on the substrate, a second electrode that extends in the first direction and is between the first electrode and the first electrode pattern on the substrate, a second electrode pattern that extends in the first direction and is between the first electrode and the second electrode on the substrate, and a first light-emitting element between the first electrode and the second electrode pattern in the contact area.

Abstract: The present application provides a WOLED device and a preparation method thereof, a WOLED display panel. The WOLED device includes: an anode; a cathode, disposed opposite to the anode; a red-fluorescence emitting layer, disposed on a side of the anode close to the cathode; a green-fluorescence emitting layer, disposed on a side of the red-fluorescence emitting layer close to the cathode; an interlayer, disposed on a side of the green-fluorescence emitting layer; and a blue-fluorescence emitting layer, disposed on a side of the interlayer close to the cathode.

Abstract: A light-emitting device is provided. The light-emitting device includes an intermediate layer, a first light-emitting unit, and a second light-emitting unit. The intermediate layer includes a region interposed between the first light-emitting unit and the second light-emitting unit. The intermediate layer has a function of supplying an electron to one of the first light-emitting unit and the second light-emitting unit and supplying a hole to the other. The first light-emitting unit includes a first light-emitting layer, the first light-emitting layer includes a first light-emitting material, the second light-emitting unit includes a second light-emitting layer, the second light-emitting layer includes a second light-emitting material, the second light-emitting layer has a first distance from the first light-emitting layer, and the first distance is longer than or equal to 5 nm and shorter than or equal to 65 nm.

Abstract: A fin-like field-effect transistor (FinFET) device is disclosed. The device includes a semiconductor substrate having a source/drain region, a plurality of isolation regions over the semiconductor substrate and a source/drain feature in the source/drain region. The source/drain feature includes a multiple plug-type portions over the substrate and each of plug-type portion is isolated each other by a respective isolation region. The source/drain feature also includes a single upper portion over the isolation regions. Here the single upper portion is merged from the multiple plug-type portions. The single upper portion has a flat top surface facing away from a top surface of the isolation region.