Abstract: A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.
Type:
Grant
Filed:
June 19, 2012
Date of Patent:
May 26, 2015
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventors:
Jeffrey P. Gambino, Jessica A. Levy, Cameron E. Luce, Daniel S. Vanslette, Bucknell C. Webb