Patents Examined by David Hu
  • Patent number: 9041210
    Abstract: A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: May 26, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeffrey P. Gambino, Jessica A. Levy, Cameron E. Luce, Daniel S. Vanslette, Bucknell C. Webb