Patents Examined by David L. Sultz
  • Bipolar semiconductor device having a conductive recombination layer
    Patent number: 4881115
    Abstract: A semiconductor device having a conductive recombination layer. The conductive recombination layer, comprised of doped polycrystalline material, doped polycrystalline material and tungsten silicide, or tungsten silicide, is disposed between two separate semiconductor substrates which are bonded together using a polished surface on the conductive recombination layer as one of the bonding interfaces. The conductive recombination layer recombines minority carriers and thereby increases the switching speed of the device.
    Type: Grant
    Filed: February 21, 1989
    Date of Patent: November 14, 1989
    Assignee: Motorola Inc.
    Inventors: Israel A. Lesk, Lowell E. Clark