Abstract: An organic layer deposition apparatus and a method of manufacturing an organic light-emitting display device by using the apparatus. In particular, an organic layer deposition apparatus that is more easily manufactured and is suitable for use in mass production of large substrates while performing high-definition patterning thereon, as well as a method of manufacturing an organic light-emitting display device by using such an apparatus.

Abstract: A composite tape and method of fabrication are provided which includes multiple layers and a laser-driven chemical vapor deposition (LCVD)-formed additive material in at least one layer of the multiple layers to enhance one or more properties of the composite tape. The LCVD-formed additive material is a single crystalline material and can include LCVD-formed granular material and/or LCVD-formed fiber material in the same or different layers of the composite tape to enhance, for instance, fracture strength and/or wear resistance of the composite tape.

Abstract: Methods and apparatus for preparing a protective coating are described. In one example aspect, a method for preparing a protective coating includes positioning one or more target objects into a chamber. The chamber comprises a movable substrate and one or more trays coupled to the movable substrate to hold the one or more target objects such that the one or more target objects are movable within the chamber. The method also includes adding a monomer vapor into the chamber and performing a chemical vapor deposition process that comprises at least one cycle, each including a pretreatment phase and a coating phase.

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state.

Abstract: A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

Abstract: Provided are a method of manufacturing a diamond-graphene hybrid heat spreader-thermal interface material assembled thermal management material including: (a) preparing a planar diamond base material; and (b) converting a predetermined thickness of at least a partial area of one side or both sides of the diamond base material into vertical graphene, wherein the diamond base material serves as a heat spreader, and a graphene layer formed on the diamond base material serves as a thermal interface material (TIM) or a heat sink, and a method of modulating the diamond-graphene hybrid thermal management material including modulating the thermal management material by attaching a heterogenous member to the surface of the diamond-graphene hybrid thermal management material and pressurizing the attached structure.

Abstract: A method for carrying out a changeover process in a system for producing beverage containers is provided. This system in operation produces plastic containers from plastic parisons by a transforming device and these produced containers are transported to a filling device and the containers are filled with a liquid and in particular a beverage, wherein the liquid is introduced into the container at a temperature of over 50° C., wherein at least the transforming device and the filling device are at least intermittently in data communication with one another and for carrying out the changeover process of at least the transforming device or the filling device a value is output and/or used which is characteristic for a changeover status of this transforming device or this filling device.

Abstract: Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones.

Abstract: The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

Abstract: Embodiments described herein relate generally to systems and methods for continuously and/or semi-continuously manufacturing semi-solid electrodes and batteries incorporating semi-solid electrodes. In some embodiments, the process of manufacturing a semi-solid electrode includes continuously dispensing a semi-solid electrode slurry onto a current collector, separating the semi-solid electrode slurry into discrete portions, and cutting the current collector to form a finished electrode.

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

Abstract: Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR?z, where each instance of R and each instance of R? are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Abstract: A method of molding a metalized composite part. The method comprises: introducing particles comprising at least one metal into a gas stream; directing the gas stream toward a surface of a thermoplastic composite part, thereby depositing a metal layer on the composite part to form a metallized composite part; and molding the metallized composite part to introduce a bend without delamination of the metal layer from the metallized composite part.

Abstract: A steel sheet has a hot-dip Zn—Al—Mg-based coating film, the coating film containing 1 mass % to 22 mass % of Al and 0.1 mass % to 10 mass % of Mg on a surface of the steel sheet, in which an X-ray diffraction peak intensity ratio of a Mg—Zn compound phase in the coating film, that is, MgZn2/Mg2Zn11, is 0.2 or less.

Abstract: A method for preparing a cathode active material is provided. The method for preparing a cathode active material can comprise the steps of: preparing a first metal oxide; preparing a second metal oxide having an oxygen ratio lower than that of the first metal oxide by heat treating the first metal oxide in a nitrogen-containing gas atmosphere; and preparing a lithium metal oxide by firing the second metal oxide and a lithium salt.

Abstract: A method for preparing an optically transparent, superomniphobic coating on a substrate, such as an optical substrate, is disclosed. The method includes providing a glass layer disposed on a substrate, the glass layer having a first side adjacent the substrate and an opposed second side, the glass layer comprising 45-85 wt. % silicon oxide in a first glass phase and 10-40 wt. % boron oxide in a second glass phase, such that a glass layer has a composition in a spinodal decomposition region. The method further includes heating the second side of the glass layer to form a phase-separated portion of the layer, the phase-separated portion comprising an interpenetrating network of silicon oxide domains and boron oxide domains, and removing at least a portion of the boron oxide domains from the phase-separated portion to provide a graded layer disposed on the substrate. The graded layer has a first side disposed adjacent the substrate, the first side comprising 45-85 wt. % silicon oxide and 10-40 wt.

Abstract: An electronic component manufacturing method includes a blotting process of bringing a conductive paste applied to an end portion of each electronic component body held by a jig into contact with a surface of a surface plate. The blotting process includes simultaneous performance of a distance changing process of changing the distance between an end face of each electronic component body and the surface of the surface plate and a position changing process of changing a two-dimensional position where the end face of the electronic component body is projected on the surface of the surface plate in such a manner that the direction of the movement of two-dimensional position in parallel to the surface of the surface plate successively varies (e.g., along a circular path).

Abstract: An installation for continuous hot-dip coating of a metal strip is provided. The installation includes a tank containing a bath of molten metal, a metal strip running through the bath and a confined wiping device. The confined wiping device includes at least two wiping nozzles placed on each side of a path of the strip after the strip has left the bath of molten metal. Each nozzle has at least one gas outlet orifice and an upper face. The confined wiping device also includes a confinement box adjacent each upper face. The confinement boxes are open on a face which faces the strip. Each box includes at least one upper part and two lateral parts.