Abstract: There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.

Abstract: A vacuum operated lithographic apparatus includes a vacuum housing for providing a vacuum environment to a support constructed to support a patterning device, or a substrate table, or a projection system, or any combination thereof. An interior of the vacuum housing includes a plurality of transport circuits for transporting fluids and/or electrical signals for use in a first process mode for lithographic processing. At least one of the transport circuits is adapted to transport energy towards the interior of the vacuum housing to stimulate outgassing in the vacuum housing for use in a second process mode for bringing the lithographic apparatus into a vacuum operating condition.

Abstract: A developing treatment apparatus for performing a developing treatment for a substrate, includes a substrate holding member for holding the substrate; an outer peripheral plate surrounding an outer peripheral portion of the substrate to form a gap between the plate and the outer peripheral portion of the substrate; and gas blowout ports for forming a gas flow which flows on a rear face of the substrate from a central portion side of the substrate to the outer peripheral portion side of the substrate, and passes by a lower end portion side of the gap.

Abstract: In the present invention, in the photolithography process in which a certain processing condition has been already set, a resist film on a substrate is exposed to light using a mask, which reduces only zero-order light of a light source at a predetermined light reduction rate and transmits the light, and then heated and developed so that the film on the substrate is reduced. Thereafter, the reduction in film thickness of the resist film is measured. The measured reduction in film thickness is then converted into a line width of a resist pattern on the already-set processing condition by a correlation function between the reduction in film thickness and the line width. Based on the converted line width, the temperature setting of the heating temperature at the time of heating after the exposure is performed. Consequently, the condition setting in the photolithography process is appropriately performed, resulting in improved uniformity of the line width of the resist pattern within the substrate.

Abstract: An intermediary layer is introduced between a lens and a wafer for an immersion lithography process. A non-supercritical gas is provided and condensed to form a layer of liquid between the lens and the wafer. The substrate may be irradiated through the lens and intermediary layer. In addition, the intermediary layer may then be evaporated. The non-supercritical gas may include superheated steam which may be condensed to form a layer of water between the lens and the wafer. The wafer may be irradiated with one of a EUV light and UV light. A system for introduction of an intermediary layer between a lens and a wafer for an immersion lithography process is also provided. The wafer for use in the immersion lithography process may includes a hydrophobic and hydrophilic surfaces to provide enhanced contact angles between the wafer and the intermediary liquid layer condensed on the wafer and to reduce light aberration provided from a light source through the intermediary liquid layer.

Abstract: An optical disc used for storing content includes a theft control area selected to render the disc unreadable. The disc must be exposed to radiation of a specific wavelength before it can be read by a regular device. The theft control area may include an area that contains data that instructs the device not to read the disc. This area includes a coating that changes its optical characteristics when exposed to the radiation. The material could be radiochromic or thermochromic. Alternatively, the theft control area includes an RFID device that includes an element that is radiation sensitive. In this embodiment, when the disc is irradiated, the element changes its electrical characteristics.

Abstract: A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Abstract: A sheet includes a plurality of incisions that define a plurality of frames. The frames are arranged in a geometric pattern to facilitate selection of an appropriate frame for cropping an image displayed on photographic media. The frames are connected to each other by an adhesive layer and substrate. Alternatively, the frames are connected by tags or micro-perfs. A transparent crop selector is used to facilitate selection of an appropriately sized frame.

Abstract: The present invention relates to alignment of a writing system and a workpiece. In particular, it relates to alignment to write a second layer pattern on a workpiece that has a first layer pattern, using an SLM. It extends to producing a mask or reticle, and to producing a layer of a device using the mask or reticle. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: A load-lock apparatus has a housing to enclose a first space and to accommodate a substrate, an exhaust pipe to exhaust a gas in the first space, a first gate valve provided in the housing to openably close to separate the first space and a second space, outside the housing, and a second gate valve provided in the housing to openably close to separate the first space and a third space, outside the housing. Pressure in the third space is lower than that in the second space. A capacity changing system moves a first portion of the housing to change capacity of the housing so that the capacity when gas in the first space is exhausted through the exhaust pipe is smaller than the capacity when the substrate is conveyed from the second space to the first space through the first gate valve.

Abstract: An exposure system for adjusting the critical dimension difference between vertical patterns and horizontal patterns includes a light source for generating a light beam having a predetermined wavelength, a lens for transforming the shape of the light beam generated from the light source into an elliptical shape extended vertically or horizontally, and a lens system for projecting the elliptical light beam passed through the lens onto a wafer through a recticle.

Abstract: In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.

Abstract: A lithographic apparatus having an improved transfer unit, is presented. The lithographic apparatus includes a processing unit that performs a lithographic process involving exchangeable objects in which the processing unit includes an illumination system that provides a beam of radiation, a support structure configured to support a patterning device that imparts a desired pattern to the beam of radiation, a substrate holder configured to hold a substrate, and a projection system configured to project the patterned beam onto a target portion of the substrate. The lithographic apparatus also includes a transfer unit comprising a single robot. The single robot is configured to transfer a first exchangeable object from a loading station to the processing unit and to transfer a second exchangeable object from the processing unit to a discharge station.

Abstract: A lithographic apparatus comprises an illumination system, an array of individually controllable elements, a substrate table, a projection system, a position encoder, an imaging device, and an image processing unit. The illumination system conditions a radiation beam. The array of individually controllable elements modulates the cross-section of the radiation beam. The substrate table supports a substrate. The projection system projects the modulated radiation beam onto a target portion of the substrate, thereby applying a pattern to the target portion of the substrate. The pattern comprises a first line and a second line. The first line is offset from the second line. The position encoder determines a position of the substrate table. The position encoder comprises a position sensor and a scale. The scale comprises a plurality of lines intended to be straight and parallel to one another. The imaging device obtains an image of the first line and the second line.

Abstract: Described are process control methods for spin-coating, and apparatuses and devices incorporating the same, wherein the method is useful for application of developer solution to a substrate, and wherein the process control method includes one or more features of: interrupted serial process control using an interrupt signal from a hardware or a software component, an interrupt service routine, and a multiple process commands initiated at durations measured in parallel from an earlier process event.

Abstract: An illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength especially ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: A projection optical system used for an exposure apparatus to projecting a reduced size of an image of an object onto an image plane includes plural refractive elements that dispense with a reflective element having a substantial optical power, wherein the projection optical system forms an intermediate image.

Abstract: The coating and developing system carries a substrate delivered to a carrier handling block to a processing block to form a film on the substrate by a coating block included in the processing block, carries the substrate through an interface block to the exposure system, processes the substrate having the exposed film by a developing process by a developing block included in the processing block and returns the thus processed substrate to the carrier handling block. A direct carrying means is superposed on the coating block and the developing block to carry a substrate having a surface coated with a film from the carrier handling block directly to the interface block. A test substrate can be carried to the exposure system to inspect the condition of the exposure system even in a state where the coating block and the developing block are under maintenance work.

Abstract: An apparatus for measuring an exposure intensity on a wafer is disclosed. According to one aspect, an apparatus for measuring an exposure intensity on a wafer includes an exposure device for generating a radiation having a predetermined wavelength. Further, the apparatus includes a mask at a first predetermined distance from the exposure device for patterned exposure of a wafer A detection device detects the exposure intensity at a second predetermined distance from the exposure device. A compensation device can be moved into the beam path between the exposure device and the detection device for the purpose of influencing the beam path.

Abstract: A light patterning system comprises an illumination system that supplies a beam of radiation having a certain wavelength (?). An array of reflective pixels patterns the beam, wherein the array includes pixels having at least a first tilting mirror that is logically coupled to a second tilting mirror. In an embodiment, the first and second tilting mirrors are (i) substantially adjacent to each other; and (ii) offset in height from each other by a first mirror displacement. A projection system is included that projects the patterned beam onto a target. In alternate embodiment, the array of reflective pixels includes pixels having first through fourth tilting mirrors that are logically coupled to each other. The first through fourth tilting mirrors are (i) respectively offset in height from a reference plane by first through fourth mirror displacements, and (ii) are respectively arranged clockwise in a substantially square pattern.