Abstract: A planar wafer-level packaging method is provided for a laser and a monitor photo detector. The laser and photo detector are affixed to a planar substrate. The planar substrate provides electrical connections to the components. A lens cap with a microlens is formed and affixed to the substrate with a seal. The lens cap forms a hermetically sealed cavity enclosing the laser and photo detector. The inside surface of the lens cap has a reflective coating with a central opening over the emitting aperture of the laser. The central opening has an anti-reflective coating. Light from the laser is directed and shaped by the lens cap to couple into an external light guide. Residual light from the edge of the laser reflects off the inside surface of the lens cap and is incident upon the photo detector. In an alternate method, the laser may be packaged using flip-chip assembly.

Abstract: An optically pumped laser has a gain medium positioned inside of an optical resonator cavity and disposed about a resonator optical axis. An optical pumping source is positioned outside of the optical resonator cavity. A reflective coupler with a coupler body, and an interior volume passing therethrough is positioned proximal to the optical pumping source. Light from the pumping source passes into an entrance aperture of the reflective coupler to an exit aperture of the reflective coupler positioned distal to the optical pumping source. The interior volume of the reflective coupler is bounded by a reflective surface, an entrance aperture and the exit aperture, and is substantially transparent to radiation from the optical pumping source. The reflective surface has a high reflectivity matched to radiation from the optical pumping source.

Abstract: A semiconductor laser light source device and light source unit according to the present invention include a first plate-like member made of metal, to which a semiconductor laser array is joined along the end portion, a second plate-like member made of metal, in which an inlet opening portion, which introduces cooling fluid, and a cooling fluid draining channel, and a third plate-like member made of metal, which is formed along the area corresponding to the end portion and to which at least one cooling channel is provided through which cooling fluid flows in the longitudinal direction of the semiconductor laser array by communicating the cooling fluid introducing channel and the cooling fluid draining channel. Thus, the sectional area of the channel can be larger than that in the construction of the related art and the processing cost is reduced by comparison with the construction of the related art.

Abstract: When the density of excitons in an organic single crystal (including the linear acenes, polyacenes, and thiophenes) approaches the density of molecular sites, an electron-hole plasma may form in the material altering the overall excitonic character of the system. The formation of the electron-hole plasma arises as a result of the screening of Coulomb interactions within individual excitons by injected free carriers. The large exciton densities required to accomplish this screening process can only be realized when excitons collect near dislocations, defects, traps, or are confined in heterostructures. Such confinement and subsequently large exciton densities allows for the observation of physical phenomena not generally accessible in an organic material. Specifically, the formation of an electron-hole plasma in an organic single crystal can allow for the observation of field-effect transistor action and electrically-pumped lasing.

Abstract: In order to improve a laser amplifying system comprising a plate-like solid-state body which has two oppositely located flat sides and comprises a laser-active medium, a cooling member with a support surface which is arranged so as to face one of the flat sides of the solid-state body and with which this flat side is thermally coupled for the discharge of heat, in such a manner that an optimum coupling takes place it is suggested that the flat side of the solid-state body be coupled mechanically and thermally to the support surface by an adhesive layer which is produced from an adhesive which passes from a liquid state into a solid, cross-linked state essentially invariant in volume and that the adhesive layer have an active adhesive layer area with a heat resistance of less than 10 K×mm2/W.

Abstract: A semiconductor laser has an antiresonant waveguide (10), which is formed by a layer sequence applied to a substrate (1). The layer sequence has outer waveguide regions (2, 8), reflection layers (3, 7), and a waveguide core (11) with an active layer (5). With this structure, semiconductor lasers with only slight vertical beam divergence and with a large beam cross section can be produced.

Abstract: A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.

Abstract: A semiconductor laser device has a semiconductor laser element, light receiving element, lead frame, and package. The semiconductor laser element is an element for emitting a laser beam. The light receiving element is a chip-shaped element which receives a monitoring laser beam emitted from the semiconductor laser element. The semiconductor laser element and the light receiving element are mounted on the lead frame. The package surrounds the semiconductor laser element and the light receiving element, and has a light reflecting surface on at least a portion of its inner surface.

Abstract: An extreme ultraviolet radiation generator is disclosed in which Xenon gas is continuously ejected from a high pressure nozzle into a low pressure chamber to generate Xenon atom clusters which are irradiated with a high repetition rate pulsed laser to form a plasma and yield quasi-continuous EUV generation. The nozzle has a beveled outer rim to enable the focus point of the laser light to be brought close to the nozzle. The nozzle is cooled to a temperature at which background Xenon gas condenses onto the nozzle forming a protective layer. A gas compressor serves to recirculate the Xenon gas and batch purification triggered by a mass spectrometer monitoring gas purity may be periodically applied.

Abstract: A semiconductor laser device, having an epitaxial semiconductor body (40) with a waveguiding layer (22), which contains an active radiation-generating layer (20), a laser-active emitter region (12), disposed in the epitaxial semiconductor body (40) and having a primary direction (30), which essentially corresponds to the exit direction of the laser radiation from the emitter region, and an amplifier region (14), adjoining the emitter region (12) in the semiconductor body (40) in the primary direction (30), for amplifying the laser radiation. The emitter region (12) and the amplifier region (14) form active regions in the semiconductor material. The waveguiding layer (22) is removed in some regions of the semiconductor body (40) outside the active regions (12, 14), in such a way that flanks (18; 32; 36) of the semiconductor body (40) that are produced by the removal form a shallow angle ? with the plane in which lies the waveguiding layer.

Abstract: A laser (126) and an AOM (10) are pulsed at substantially regular and substantially similar constant high repetition rates to provide working laser outputs (40) with variable nonimpingement intervals (50) without sacrificing laser pulse-to-pulse energy stability. When a working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in coincidence with the laser output (24) to transmit it to a target. When no working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in noncoincidence with the laser output (24) so it gets blocked. So the average thermal loading on the AOM (10) remains substantially constant regardless of how randomly the working laser outputs (40) are demanded. The AOM (10) can also be used to control the energy of the working laser output (40) by controlling the power of the RF pulse (38) applied. When the RF power is changed, the RF duration (44) of the RF pulse (38) is modified to maintain the constant average RF power.

Abstract: In a tunable optical source, a zone plate device 100 is used to provide frequency selective feedback to a laser diode 110. The zone plate device 100 is positioned to receive an output mode of the laser diode 110 and to return a frequency selected image of the mode spot to the laser diode 110. By changing the refractive index of material of the zone plate device 100, it is possible to change the frequency providing the image at the point of return to the laser diode 110. This allows the zone plate device 100 to be used in tuning the optical source, without using moving parts. In an embodiment, the zone plate device 100 is at least partially fabricated in an electro-optic material such as SBN:75 and can therefore be tuned by using electrodes to apply an elecric field across it. The zone plate device 100 can be coupled directly to the laser diode 110 or via a waveguide section 105 which can be used to increase the output mode spot size from the laser diode 110 for delivery to the zone plate device 100.

Abstract: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: The solid state laser comprises a laser gain medium (1), pumping means for pumping the laser gain medium, and a laser cavity having a first end (3) and a second end (17), wherein the laser gain medium is at, or in the vicinity of, said first end (3) of said cavity. A semiconductor saturable absorber mirror (SESAM) can be placed at the second end (17) of the cavity. The laser gain medium can comprise at least one face for receiving pumping energy from the pumping means, the face being made reflective at a laser frequency of the laser, so that it can form the first end of the laser cavity. The resulting setup used for generating femtosecond laser pulses.

Abstract: A near-field optical system having one or more solid state lasers and an aerodynamically shaped slider which comprise a single integrated, monolithic device fabricated from the same base semiconductor material. The monolithic optical head can be quickly and easily attached to the read arm of an optical read/write device without requiring attachment of separate laser elements, and without micropositioning or use of optical microscopy for positioning the lasers. The optical head comprising a single semiconductor substrate including a first region which defines a slider having an air bearing surface, and at least one second, laser region which defines a diode laser, with the diode laser having an emission face which is substantially co-planar with the air bearing surface. A slider region of the semiconductor substrate includes an air bearing surface, adjacent the p-clad layer, which is aerodynamically structured and configured to define a slider.

Abstract: An integrated buried heterojunction laser optically coupled to a ridge waveguide electro-absorption (EA) optical modulator having a raised ridge structure is manufactured on a single semiconductor substrate on which a plurality of semiconductor layers are grown, including at least one active layer through which optical radiation is coupled from the laser to the waveguide. Semiconductor layers above the active layer form a laser current conduction region and semiconductor layers adjacent the active layer form a laser current confinement region. The ridge structure is formed from one or more layers also used to form the laser current conduction region. The layers used to form the laser current confinement region do not extend adjacent the ridge structure.

Abstract: A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.

Abstract: A dual wavelength optical fiber distributed feedback laser comprises a pump laser coupled to a birefringent fiber in which a first grating device (two co-located single phase-shift fiber Bragg gratings (FBGs)) is provided. The grating device gives the laser two potential lasing modes in each of two orthogonal polarization states. A polarization mode coupling FBG selects two orthogonally polarized modes on which the laser oscillates. In a photonic data carrying signal source, the laser is coupled to a polarization dependent, optical modulator operable to apply a modulation, at a data signal frequency, to one polarization mode of the laser output. In an optical waveguide based electronic signal transmission system the modulated and un-modulated polarization modes output from the source are transmitted across a fiber transmission line to a polarizing optical fiber in which the two modes heterodyne to generate an electronic carrier signal in the optical domain.

Abstract: Apparatus for frequency conversion of light, the apparatus comprises: a light-emitting device for emitting a light having a first frequency, the light-emitting device being an edge-emitting semiconductor light-emitting diode having an extended waveguide selected such that a fundamental transverse mode of the extended waveguide is characterized by a low beam divergence. The apparatus further comprises a light-reflector, constructed and designed so that the light passes a plurality of times through an external cavity, defined between the light-emitting device and the light-reflector, and provides a feedback for generating a laser light having the first frequency. The apparatus further comprises a non-linear optical crystal positioned in the external cavity and selected so that when the laser light having the first frequency passes a plurality of times through the non-linear optical crystal, the first frequency is converted to a second frequency being different from the first frequency.